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    Tuneable photonic crystal lasers and a method of fabricating the same
    91.
    发明授权
    Tuneable photonic crystal lasers and a method of fabricating the same 有权
    可调光子晶体激光器及其制造方法

    公开(公告)号：US06711200B1

    公开(公告)日：2004-03-23

    申请号：US09656324

    申请日：2000-09-06

    Applicant: Axel Scherer ,  Oskar Painter

    Inventor： Axel Scherer ,  Oskar Painter

    IPC: H01S303

    CPC classification number: G02B6/122 ,  B82Y20/00 ,  G02B6/1225 ,  G02B6/136 ,  H01S3/0602 ,  H01S3/0635 ,  H01S5/06256 ,  H01S5/1042 ,  H01S5/105 ,  H01S5/183 ,  H01S5/187

    Abstract: Room temperature lasing from optically pumped single defect in a two-dimensional photonic bandgap crystal is illustrated. The high Q optical microcavities are formed by etching an array of air holes into a half wavelength thick multiquantum well waveguide. Defects in the two-dimensional photonic crystal or used to support highly localized optical modes with volumes ranging from 2 to 3 (&lgr;/2n)3. Lithographic tuning of the air hole radius and the lattice spacing is used to match the cavity wavelength to the quantum well gain peak, as well as to increase cavity Q. The defect lasers were pumped with 10-30 nsec pulse of 0.4-1 percent duty cycle. The threshold pump power was 1500 milliwatts. The confinement of the defect mode energy to a tiny volume and the enhancement of the spontaneous emission rate make the defect cavity an interesting device for low threshold, high spontaneous emission coupling factor lasers, and high modulation rate light emitting diodes. Optic structures formed from photonic crystals also hold promise due to the flexibility of their geometries. Lithographic methods may be employed to alter the photonic crystal geometry so as to tune device characteristics. The integration of densely packed photonic crystal waveguides, prisons, and light sources integrated on a single monolithic chip is made possible. Lithographically defined photonic crystal cavities may also find use in some material systems as an alternative to epitaxially grown mirrors, such as for long wavelengths vertical cavity surface emitting lasers (VCSEL) and GaN based devices.

    Abstract translation: 示出了在二维光子带隙晶体中的光泵浦单缺陷的室温激光。 高Q光学微腔是通过将一组空气孔蚀刻成半波长厚的多量子阱波导形成的。 二维光子晶体中的缺陷或用于支持体积范围为2至3（λ/ 2n）3的高度局部化光学模式。 使用空气孔半径和晶格间距的光刻调谐来匹配腔体波长与量子阱增益峰值，以及增加空腔Q.缺陷激光器以0.4-1％的占空比的10-30 ns脉冲泵浦 周期。 阈值泵功率为1500毫瓦。 将缺陷模式能量限制到微小体积并增加自发发射速率使得缺陷腔成为低阈值，高自发发射耦合因子激光器和高调制率发光二极管的有意义的装置。 由光子晶体形成的光学结构由于其几何形状的灵活性而具有前景。 可以使用光刻方法来改变光子晶体的几何形状，以便调节器件的特性。 密集封装的光子晶体波导，监视器和集成在单个单片芯片上的光源的集成是可能的。 光刻晶体空穴也可用于某些材料系统中，作为外延生长反射镜的替代品，例如用于长波长垂直腔表面发射激光器（VCSEL）和基于GaN的器件。

    Method of electroplating of high aspect ratio metal structures into semiconductors
    92.
    发明授权
    Method of electroplating of high aspect ratio metal structures into semiconductors 有权
    将高纵横比金属结构电镀到半导体中的方法

    公开(公告)号：US06576113B1

    公开(公告)日：2003-06-10

    申请号：US09699117

    申请日：2000-10-27

    Applicant: Axel Scherer ,  Joyce Wong

    Inventor： Axel Scherer ,  Joyce Wong

    IPC: C25D534

    CPC classification number: H01F41/34 ,  C25D5/02 ,  C25D5/34 ,  C25D7/123 ,  H01L21/3212 ,  Y10S438/949

    Abstract: By using electron beam lithography, chemically assisted ion beam etching, and electroplating, high aspect ratio magnetic columns, 60 nm-170 nm in diameter, which are embedded in an aluminum-gallium-oxide/gallium-arsenide (Al0.9Ga0.1)203/GaAs heterostructured substrate, are fabricated. Storage of data in electroplated Ni columns is realized in the form of tracks 0.5 &mgr;m and 0.25 &mgr;m in the down-track direction, and 1 &mgr;m in the cross-track direction, corresponding to areal densities of 1.3 and 2.6 Gbits/in2 respectively. The fabrication of patterned media samples, using dry etching and oxidation of AlGaAs, and electrodeposition of Ni into GaAs substrate is realized.

    Abstract translation: 通过使用电子束光刻，化学辅助离子束蚀刻和电镀，直径为60nm-170nm的高纵横比磁柱，其嵌入在铝 - 镓 - 氧化镓/砷化镓（Al 0.9 Ga 0.1） 203 / GaAs异质结构衬底。 在电镀Ni柱中的数据的存储以轨道方向为0.5μm和0.25μm的轨道的形式实现，并且在交叉轨道方向上实现1mm，对应于1.3和2.6Gbits / in2的面密度。 实现了使用AlGaAs的干蚀刻和氧化以及将Ni电沉积到GaAs衬底中的图案化介质样品的制造。

    Surface plasmon enhanced light emitting diode and method of operation for the same
    93.
    发明授权
    Surface plasmon enhanced light emitting diode and method of operation for the same 失效
    表面等离子体增强型发光二极管及其操作方法相同

    公开(公告)号：US06534798B1

    公开(公告)日：2003-03-18

    申请号：US09656323

    申请日：2000-09-06

    Applicant: Axel Scherer ,  Jelena Vuckovic ,  Marko Loncar

    Inventor： Axel Scherer ,  Jelena Vuckovic ,  Marko Loncar

    IPC: H01L3300

    CPC classification number: H01L33/465 ,  H01L33/0004

    Abstract: The emission properties of light-emitting diodes are enhanced by coupling to surface plasmons. The semiconductor emitter layer of the light-emitting diode is thinner than &lgr;/2 and is sandwiched between two metal films. A periodic pattern is defined in the top semitransparent metal layer by lithography with the result that it efficiently couples out the light emitted from the semiconductor and simultaneously enhances the spontaneous emission rate. Extraction efficiencies of up to 35% and Purcell factors of up to 4.5 are obtainable. Photoluminescence intensities of up to 46 times higher in fabricated structures compared to unprocessed wafers are obtained. The increased light emission is due to an increase in the efficiency and an increase in the pumping intensity resulting from trapping of pump photons within the microcavity.

    Abstract translation: 通过耦合到表面等离子体激元来增强发光二极管的发射特性。 发光二极管的半导体发射极层比amb / 2薄，夹在两个金属膜之间。 通过光刻在顶部半透明金属层中定义周期性图案，结果是它有效地耦合出从半导体发出的光，同时增强了自发发射速率。 可获得高达35％的萃取效率和高达4.5的Purcell因子。 获得了与未处理的晶片相比，制造结构的光致发光强度高达46倍。 增加的光发射是由于效率的增加和由于在微腔内捕获泵浦光子而引起的泵浦强度的增加。

    Photonic crystal microcavities for strong coupling between an atom and the cavity field and method of fabricating the same
    94.
    发明授权
    Photonic crystal microcavities for strong coupling between an atom and the cavity field and method of fabricating the same 失效
    用于在原子和腔场之间强耦合的光子晶体微腔及其制造方法

    公开(公告)号：US06466709B1

    公开(公告)日：2002-10-15

    申请号：US09847743

    申请日：2001-05-02

    Applicant: Axel Scherer ,  Jelena Vuckovic ,  Marko Longcar ,  Hideo Mabuchi

    Inventor： Axel Scherer ,  Jelena Vuckovic ,  Marko Longcar ,  Hideo Mabuchi

    IPC: G02B626

    CPC classification number: H01S5/10 ,  B82Y20/00 ,  G02B6/1225 ,  H01S5/105

    Abstract: Optical microcavities based on two dimensional arrays of holes defined in photonic crystals are optimized for maximum Q factors and minimum mode volume. They can also be used for strong coupling between the cavity field and an atom trapped within a defect of the photonic crystals, or for tunable filters if the holes are filled with electro-optical polymers. In one embodiment the Q factor of a cavity is increased by elongation of a plurality of holes in at least one row in a predetermined direction. Modal structures of microcavities, as well as quality factors, mode volumes, symmetry properties and radiation patterns of localized defect modes as a function of the slab thickness and parameters of photonic crystal and defects are illustrated.

    Abstract translation: 基于在光子晶体中定义的孔的二维阵列的光学微腔针对最大Q因子和最小模量体积进行了优化。 它们还可以用于腔场和捕获在光子晶体的缺陷内的原子之间的强耦合，或者如果孔被电光聚合物填充，则可用于可调谐滤波器。 在一个实施例中，空腔的Q因子通过在预定方向上的至少一行中的多个孔的伸长而增加。 示出了微腔的模态结构，以及作为板厚度和光子晶体和缺陷参数的局部缺陷模式的质量因子，模量，对称性质和辐射图。

    Method of fabricating lateral nanopores, directed pore growth and pore interconnects and filter devices using the same
    95.
    发明授权
    Method of fabricating lateral nanopores, directed pore growth and pore interconnects and filter devices using the same 失效
    制造侧向纳米孔的方法，定向孔生长和孔互连以及使用其的过滤装置

    公开(公告)号：US06461528B1

    公开(公告)日：2002-10-08

    申请号：US09699114

    申请日：2000-10-27

    Applicant: Axel Scherer ,  Theodore Doll ,  Thomas Hoffman

    Inventor： Axel Scherer ,  Theodore Doll ,  Thomas Hoffman

    IPC: B31D300

    CPC classification number: B01L3/5082 ,  B01J2219/00317 ,  B01J2219/00783 ,  B01J2219/00844 ,  B01J2219/00907 ,  B01L2200/12 ,  B82Y15/00 ,  C40B60/14 ,  G01Q80/00

    Abstract: Lateral pores in a thin metal film as well as fabricating branching and expanding ore arrays can be fabricated by a method of growing long pores laterally underneath a ask by use of stress compliant masks or varying the anodization voltage. Applications range from use with scanning electron microscope (SEM-compatible single molecule probe stations), to nanowire fixtures and to the use with a “pixelating, nonscanning” near field optical microscope (NOM). Pores are defined by conventional anodization vertically into the underlying membrane of preporous material through any overlying masking layers. The general solution is to utilize mechanically stable masks that withstand the stress during anodization and counteract the pore formation stress to lead to good pore ordering and directed growth. Multilayer masks are well suited for this. With a composition of materials having different elastic properties, tensile stress can be matched to counteract compressive stress caused by porous material growth. The boundary stress problem between preporous and porous material is solved by using a planarizing mask material that provides locally increased masking layer thickness at the critical boundary between nonporous and porous material in the film.

    Abstract translation: 薄金属膜中的侧向孔以及制造分支和扩展的矿石阵列可以通过使用应力柔顺掩模或改变阳极氧化电压在问题下横向生长长孔的方法来制造。 应用范围从使用扫描电子显微镜（SEM兼容单分子探针站）到纳米线夹具以及使用“像素化，非选择”近场光学显微镜（NOM）。 通过常规的阳极氧化，通过任何叠加的掩蔽层将孔定义为预浸材料的下面的膜。 一般的解决方案是利用在阳极氧化过程中承受应力的机械稳定的掩模，并抵消孔隙形成应力以导致良好的孔排序和定向生长。 多层面罩非常适合这一点。 通过具有不同弹性特性的材料组成，拉伸应力可以匹配以抵消由多孔材料生长引起的压缩应力。 通过使用在膜中无孔和多孔材料的临界边界处提供局部增加的掩蔽层厚度的平面化掩模材料来解决预型和多孔材料之间的边界应力问题。

    Method of making a surface emitting semiconductor laser
    97.
    发明授权
    Method of making a surface emitting semiconductor laser 失效
    制造表面发射半导体激光器的方法

    公开(公告)号：US5034344A

    公开(公告)日：1991-07-23

    申请号：US538577

    申请日：1990-06-18

    Applicant: Jack L. Jewell ,  Axel Scherer

    Inventor： Jack L. Jewell ,  Axel Scherer

    IPC: H01S5/183 ,  H01S5/343

    CPC classification number: B82Y20/00 ,  H01S5/18347 ,  H01S5/18305 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/3432

    Abstract: A method of making a vertical-cavity surface emitting laser and method of making in which a III-V heterostructure is epitaxially grown to include a quantum well active region between two interference mirrors separated by an emitting wavelength of the quantum well region. A small pillar of this heterostructure is etched by chemically assisted xenon ion beam etching. Prior to etching, a top metal contact is deposited on the epitaxial semiconductor. Light is emitted through the substrate having a bandgap larger than that of the quantum well region.

    Abstract translation: 制造垂直腔表面发射激光的方法及其制造方法，其中外延生长III-V异质结，以包括由量子阱区的发射波长分开的两个干涉镜之间的量子阱有源区。 通过化学辅助的氙离子束蚀刻蚀刻该异质结构的小柱。 在蚀刻之前，在外延半导体上沉积顶部金属接触。 光通过具有大于量子阱区的带隙的衬底发射。

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