公开(公告)号：US07923316B2

公开(公告)日：2011-04-12

申请号：US11808521

申请日：2007-06-11

Applicant: Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

Inventor： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

IPC: H01L21/00

CPC classification number: H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

Abstract: In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

Abstract translation: 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

公开(公告)号：US07859054B2

公开(公告)日：2010-12-28

申请号：US11561572

申请日：2006-11-20

Applicant: Huaxiang Yin ,  Takashi Noguchi ,  Hyuk Lim ,  Wenxu Xianyu ,  Hans S. Cho

Inventor： Huaxiang Yin ,  Takashi Noguchi ,  Hyuk Lim ,  Wenxu Xianyu ,  Hans S. Cho

IPC: H01L21/84 ,  H01L27/12

CPC classification number: H01L27/12 ,  H01L29/78609 ,  H01L29/78696

Abstract: A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively.

Abstract translation: 薄膜晶体管包括具有非线性电子移动路径的Si基通道，设置在沟道两侧的源极和漏极，设置在沟道上方的栅极，介于通道和栅极之间的绝缘体，以及 支撑通道的基板，分别设置在通道的两侧的源极和漏极。

公开(公告)号：US07851280B2

公开(公告)日：2010-12-14

申请号：US12730344

申请日：2010-03-24

Applicant: Ji-sim Jung ,  Jany-yeon Kwon ,  Jong-man Kim ,  Kyung-bae Park ,  Takashi Noguchi

Inventor： Ji-sim Jung ,  Jany-yeon Kwon ,  Jong-man Kim ,  Kyung-bae Park ,  Takashi Noguchi

IPC: H01L21/00

CPC classification number: H01L27/3244 ,  H01L27/1255 ,  H01L27/3265

Abstract: An organic electroluminescent display (“OELD”) includes an organic light-emitting diode (“OLED”), a circuit region, and an interlayer dielectric (“ILD”) layer. The OLED is disposed in each of a plurality of pixels arranged on a substrate. The circuit region includes two or more thin film transistors (“TFTs”) and a storage capacitor. The ILD layer has two or more insulating layers and includes a first region disposed between both electrodes of the storage capacitor and a second region covering the TFTs. At least one of the insulating layers has a window exposing the insulating layer directly beneath the at least one insulating layer so that that the ILD layer is thinner in the first region than in the second region. Accordingly, it is possible to reduce an occupation area of the storage capacitor while maintaining the necessary capacitance of the storage capacitor and expanding the area of the luminescent region.

公开(公告)号：US20100200834A1

公开(公告)日：2010-08-12

申请号：US12659776

申请日：2010-03-22

Applicant: Hans S. Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-Young Kim ,  Huaxiang Yin ,  Xiaoxin Zhang

Inventor： Hans S. Cho ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-Young Kim ,  Huaxiang Yin ,  Xiaoxin Zhang

IPC: H01L29/775 ,  H01L29/04 ,  H01L29/02 ,  H01L27/12

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78684 ,  H01L29/78696 ,  Y10S977/762 ,  Y10S977/814 ,  Y10S977/90 ,  Y10S977/932 ,  Y10S977/943

Abstract: Example embodiments relate to a crystalline nanowire substrate having a structure in which a crystalline nanowire film having a relatively fine line-width may be formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the crystalline nanowire substrate may include preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.

Abstract translation: 示例性实施例涉及具有其中可以在基板上形成具有相对较细的线宽的结晶纳米线膜的结构的晶体纳米线基板及其制造方法，以及使用其制造薄膜晶体管的方法 。 制造结晶纳米线基板的方法可以包括制备基板，在基板上形成绝缘膜，在绝缘膜上形成硅膜，将绝缘膜和硅膜图案化成带状，减小线宽 绝缘膜通过底切蚀刻绝缘膜的至少一个侧面，并且通过使硅膜熔化和结晶而在绝缘膜的上表面上形成自对准硅纳米线膜。

公开(公告)号：USD615007S1

公开(公告)日：2010-05-04

申请号：US29316234

申请日：2009-09-03

Applicant: Gou Kasai ,  Takashi Noguchi ,  Matthew Weaver

Designer： Gou Kasai ,  Takashi Noguchi ,  Matthew Weaver

公开(公告)号：US07696009B2

公开(公告)日：2010-04-13

申请号：US11471554

申请日：2006-06-21

Applicant: Makoto Terui ,  Yasuo Tanaka ,  Takashi Noguchi

Inventor： Makoto Terui ,  Yasuo Tanaka ,  Takashi Noguchi

IPC: H01L21/00

CPC classification number: H01L21/568 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/3677 ,  H01L23/3733 ,  H01L24/27 ,  H01L24/81 ,  H01L29/0657 ,  H01L2224/04026 ,  H01L2224/274 ,  H01L2224/73253 ,  H01L2224/81801 ,  H01L2924/01029 ,  H01L2924/10158 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00

Abstract: A fabricating method for a semiconductor device includes forming a heat spreading material on rear surface of the semiconductor wafer. The semiconductor wafer has a plurality of device areas and scribe lines which are arranged between the device areas. After the heat spreading material is formed on rear surface of the semiconductor wafer, the semiconductor wafer is separated at the scribe lines.

Abstract translation: 一种半导体器件的制造方法包括在半导体晶片的后表面上形成散热材料。 半导体晶片具有布置在器件区域之间的多个器件区域和划线。 在半导体晶片的后表面上形成散热材料之后，半导体晶片在划线处被分离。

公开(公告)号：US07511381B2

公开(公告)日：2009-03-31

申请号：US11248620

申请日：2005-10-13

Applicant: Takashi Noguchi ,  Wenxu Xianyu ,  Hans S. Cho ,  Huaxiang Yin

Inventor： Takashi Noguchi ,  Wenxu Xianyu ,  Hans S. Cho ,  Huaxiang Yin

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L21/02598 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/66772

Abstract: A thin film transistor (TFT) and a method of manufacturing the same are provided. The TFT includes a transparent substrate, an insulating layer on a region of the transparent substrate, a monocrystalline silicon layer, which includes source, drain, and channel regions, on the insulating layer and a gate insulating film and a gate electrode on the channel region of the monocrystalline silicon layer.

Abstract translation: 提供薄膜晶体管（TFT）及其制造方法。 TFT包括透明基板，在透明基板的区域上的绝缘层，在绝缘层上包括源极，漏极和沟道区的单晶硅层，以及沟道区上的栅极绝缘膜和栅极电极 的单晶硅层。

公开(公告)号：US07479667B2

公开(公告)日：2009-01-20

申请号：US11022756

申请日：2004-12-28

Applicant: Jang-yeon Kwon ,  Takashi Noguchi ,  Young-soo Park ,  Do-young Kim

Inventor： Jang-yeon Kwon ,  Takashi Noguchi ,  Young-soo Park ,  Do-young Kim

IPC: H01L29/76 ,  H01L29/745

CPC classification number: H01L29/78696 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/1029 ,  H01L29/6675 ,  H01L29/78663 ,  H01L29/78672

Abstract: Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.

Abstract translation: 提供了包括被定义为高和低迁移率区域的有源区域和具有半导体器件的薄膜晶体管的半导体器件。 有源面积的迁移率可以降低到足以满足半导体器件要求的水平。 有源区的迁移率的降低有助于减少半导体器件之间的迁移率偏差。 结果，可以大大提高采用大规模半导体器件的平板显示器的质量。

公开(公告)号：US07479442B2

公开(公告)日：2009-01-20

申请号：US11071175

申请日：2005-03-04

Applicant: Takashi Noguchi ,  Wenxu Xianyu ,  Huaxiang Yin

Inventor： Takashi Noguchi ,  Wenxu Xianyu ,  Huaxiang Yin

IPC: H01L21/461

CPC classification number: H01L21/76254

Abstract: Provided is a method of manufacturing a single crystal Si film. The method includes: preparing a Si substrate on which a first oxide layer is formed and an insulating substrate on which a second oxide layer is formed; forming a dividing layer at a predetermined depth from a surface of the Si substrate by implanting hydrogen ions from above the first oxide layer; bonding the insulating substrate to the Si substrate so that the first oxide layer contacts the second oxide layer; and forming a single crystal Si film having a predetermined thickness on the insulating substrate by cutting the dividing layer by irradiating a laser beam from above the insulating substrate. Therefore, a single crystal Si film having a predetermined thickness can be formed on an insulating substrate.

Abstract translation: 提供制造单晶Si膜的方法。 该方法包括：制备其上形成有第一氧化物层的Si衬底和形成有第二氧化物层的绝缘衬底; 通过从所述第一氧化物层上方注入氢离子，从所述Si衬底的表面形成预定深度的分隔层; 将绝缘基板接合到Si衬底，使得第一氧化物层接触第二氧化物层; 以及通过从绝缘基板上方照射激光束切割分隔层，在绝缘基板上形成具有预定厚度的单晶硅膜。 因此，可以在绝缘基板上形成具有预定厚度的单晶Si膜。

公开(公告)号：US07390706B2

公开(公告)日：2008-06-24

申请号：US11289312

申请日：2005-11-30

Applicant: Hans S. Cho ,  Takashi Noguchi ,  Do-young Kim

Inventor： Hans S. Cho ,  Takashi Noguchi ,  Do-young Kim

IPC: H01L21/84

CPC classification number: H01L21/02675 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66772

Abstract: A method of forming a high quality channel region of a TFT by forming a large size monocrystalline silicon thin film using a patterned metal mask and a grain boundary filtering region is provided. The method includes sequentially stacking a first buffer layer and an amorphous silicon layer on a substrate, forming a first silicon region in which crystallization begins, a second silicon region having a width smaller than a width of the first silicon region and located on a central portion of a side of the first silicon region, and a third silicon region having a width than greater the width of the second silicon region and contacting the second silicon region, forming a metal mask partly on the first silicon region, and crystallizing the amorphous silicon layer by cooling the amorphous silicon layer after melting the entire amorphous silicon layer except for a portion of the amorphous silicon layer under the metal mask by radiating laser beams to the patterned amorphous silicon layer.

Abstract translation: 提供了通过使用图案化金属掩模和晶界过滤区域形成大尺寸单晶硅薄膜来形成TFT的高质量沟道区域的方法。 该方法包括在基板上依次层叠第一缓冲层和非晶硅层，形成开始结晶的第一硅区域，第二硅区域的宽度小于第一硅区域的宽度并位于中心部分 并且第三硅区域的宽度大于第二硅区域的宽度并与第二硅区域接触，部分地在第一硅区域上形成金属掩模，并且使非晶硅层结晶 通过对图案化的非晶硅层照射激光束，在金属掩模下方的非晶硅层的一部分熔融了整个非晶硅层之后，冷却非晶硅层。