公开(公告)号：US4807402A

公开(公告)日：1989-02-28

申请号：US156272

申请日：1988-02-12

Applicant: Ghanshyam Rai

Inventor： Ghanshyam Rai

IPC: B23B27/20 ,  B01J3/06 ,  B24D3/00 ,  B24D18/00 ,  B30B11/00 ,  C04B35/52 ,  C04B35/583 ,  C09K3/14 ,  C22C26/00

CPC classification number: C22C26/00 ,  B01J3/062 ,  B24D18/0009 ,  B24D3/00 ,  B30B11/004 ,  B01J2203/062 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/0685

Abstract: Abrasive compacts are described which comprise a support mass having abrasive masses bonded to each of the upper and lower surfaces of said support mass. Preferably, the abrasive masses are diamond or cubic boron nitride and the support mass is a sintered carbide. Bonding of the abrasive masses to the support mass preferably is accomplished by a high pressure, high temperature process.

公开(公告)号：US4772575A

公开(公告)日：1988-09-20

申请号：US33170

申请日：1987-03-31

Applicant: Nobuhiro Ota ,  Hitoshi Sumiya ,  Shuji Yazu

Inventor： Nobuhiro Ota ,  Hitoshi Sumiya ,  Shuji Yazu

IPC: B01J3/06 ,  C04B35/5831 ,  C04B35/58

CPC classification number: B01J3/062 ,  C04B35/5831 ,  B01J2203/0645 ,  B01J2203/066 ,  B01J2203/0685

Abstract: A sintered compact of cubic boron nitride is made by adsorbing and/or diffusing 0.005 to 1.000 percent by weight of water into a boron nitride compact containing alkaline earth metal boron nitride as a catalyst. The so prepared compact is then subjected to a treatment under high pressure at a relatively low temperature to form a dense cubic boron nitride sintered compact of high purity.

Abstract translation: 通过将0.005-1000重量％的水吸附和/或扩散到含有碱土金属氮化硼作为催化剂的氮化硼压块中来制备立方氮化硼的烧结体。 然后将如此制备的压块在较高温度下在高压下进行处理，以形成高纯度的致密立方氮化硼烧结体。

公开(公告)号：US4636253A

公开(公告)日：1987-01-13

申请号：US769609

申请日：1985-08-26

Applicant: Tetsuo Nakai ,  Shuji Yazu

Inventor： Tetsuo Nakai ,  Shuji Yazu

IPC: B01J3/06 ,  B22F7/06 ,  C22C26/00 ,  C22C29/02

CPC classification number: C22C26/00 ,  B01J3/062 ,  B22F7/06 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685 ,  C22C2026/005

Abstract: A diamond sintered body for tools contains a diamond content in excess of 93 percent and not more than 99 percent by volume and a residue including at least one of a metal or a carbide selected from groups IVa, Va and VIa of the periodic table and an iron group metal of 0.1 to 3 percent by volume in total and pores at least 0.5 percent and not more than 7 percent by volume.

Abstract translation: 用于工具的金刚石烧结体含有超过93体积％且不超过99体积％的金刚石含量和包含选自元素周期表的IVa，Va和VIa族的金属或碳化物中的至少一种的残渣和 铁族金属总量为0.1〜3体积％，孔体积为0.5体积％以上7体积％以下。

公开(公告)号：US4547257A

公开(公告)日：1985-10-15

申请号：US654295

申请日：1984-09-25

Applicant: Eiichi Iizuka ,  Tomoji Sando ,  Shinji Kashima

Inventor： Eiichi Iizuka ,  Tomoji Sando ,  Shinji Kashima

IPC: B01J3/06 ,  C30B29/04

CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068

Abstract: Diamond crystals are grown by subjecting reaction materials of nondiamond carbon, a solvent metal, and diamond seeds to pressure and temperature conditions in the diamond-stable region. The reaction materials are in the form of a pair of a superimposed solvent metal plate and a nondiamond carbon plate or a pile made of a plurality of the pairs of the superimposed solvent metal plate and nondiamond carbon plate, and a plurality of the seeds are disposed on either one or each of the confronting surfaces of the pair of the superimposed solvent metal plate and nondiamond carbon plate. Alternatively, the reaction materials are in the form of a plate made of a mixture of the solvent metal and the nondiamond carbon or a pile made of a plurality of the mixture plates, and a plurality of the seeds are disposed on a surface of each plate. The seeds have a particle size of not larger than 50 .mu.m and are regularly disposed in such a manner that the seeds are located at a substantially equal distance and the distance between the peripheries of every two adjacent growth diamond crystal particles is from 50 to 300 .mu.m. The diamond crystals are allowed to grow until their sizes reach at least five times the size of the seeds.

Abstract translation: 金刚石晶体通过使非金刚石碳，溶剂金属和金刚石晶种的反应材料经受金刚石稳定区域中的压力和温度条件而生长。 反应材料是一对叠加的溶剂金属板和非金刚石碳板或由多对叠加的溶剂金属板和非金刚石碳板制成的桩的形式，并且设置多个种子 在一对叠加的溶剂金属板和非金刚石碳板的一个或每个相对表面上。 或者，反应材料为由溶剂金属和非金刚石碳的混合物制成的板或由多个混合物板制成的堆的形式，并且多个种子设置在每个板的表面上 。 种子具有不大于50μm的粒度，并且以这样的方式规则地设置种子，其距离基本相等，并且每两相邻的生长金刚石晶体颗粒的周边之间的距离为50至300 亩 允许金刚石晶体生长直到其尺寸达到种子大小的至少五倍。

公开(公告)号：US4544540A

公开(公告)日：1985-10-01

申请号：US506935

申请日：1983-06-22

Applicant: Kazuo Tsuji

Inventor： Kazuo Tsuji

IPC: B01J3/06 ,  C30B9/00 ,  C30B13/02 ,  C01B31/06

CPC classification number: C30B13/02 ,  B01J3/062 ,  C30B29/04 ,  C30B9/00 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068

Abstract: An artificial diamond single crystal, a process for producing it, and tools for utilizing it are disclosed. The artificial diamond crystal has at least one surface which has a rough surface formed by suppressed crystal growth at that surface. The single crystal is produced by providing a diamond synthesis reaction system comprised of a reaction chamber, a carbon source and a solvent metal arranged in contact with the carbon source. A seed crystal is provided in the reaction chamber under elevated pressures and temperatures which permit diamond to be maintained thermodynamically stable. The reaction system is heated to provide a temperature gradient in such a way that a portion of the solvent metal in contact with the carbon source is higher in temperature than a portion of the solvent metal in contact with the seed crystal. This temperature gradient causes a migration of the carbon from the higher temperature portion to the lower temperature portion using the solvent metal as a medium. This allows the carbon to precipitate and grow as diamond on the seed crystal due to the difference in solubility caused by the temperature gradient. The conditions in the reaction chamber housing are maintained so as to suppress crystal growth in at least one direction perpendicular to the direction of the temperature gradient, at the end of the solvent metal. The suppressed crystal growth provides the rough surface of the single crystal which can be connected to a tool and thus provides good adherence between the crystal and the tool.

Abstract translation: 公开了一种人造金刚石单晶，其制造方法及其利用工具。 人造金刚石晶体具有至少一个表面，其具有通过在该表面处抑制晶体生长而形成的粗糙表面。 通过提供由反应室，碳源和布置成与碳源接触的溶剂金属组成的金刚石合成反应系统来生产单晶。 在升高的压力和温度下在反应室中提供晶种，这允许金刚石在热力学上保持稳定。 将反应体系加热以提供温度梯度，使得与碳源接触的溶剂金属的一部分温度高于与晶种接触的溶剂金属的一部分。 该温度梯度使用溶剂金属作为介质使碳从较高温度部分迁移到较低温度部分。 这允许碳由于温度梯度引起的溶解度的差异而在晶种上沉淀和生长为金刚石。 保持反应室壳体中的条件，以便在溶剂金属末端的至少一个垂直于温度梯度方向的方向上抑制晶体生长。 抑制的晶体生长提供可以连接到工具的单晶的粗糙表面，从而在晶体和工具之间提供良好的粘附。

公开(公告)号：US4534934A

公开(公告)日：1985-08-13

申请号：US313119

申请日：1981-10-20

Applicant: Hyun S. Cho

Inventor： Hyun S. Cho

IPC: B01J3/06 ,  B21C3/02 ,  B21C3/18 ,  B22F7/06 ,  B24D3/08 ,  C22C26/00 ,  B22F5/00 ,  B21K5/20

CPC classification number: B01J3/062 ,  B21C3/025 ,  B21C3/18 ,  B22F7/06 ,  B24D3/08 ,  C22C26/00 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685 ,  Y10S76/12

Abstract: A process improvement is disclosed for making diamond wire die compacts of the type which are generally described as an inner polycrystalline diamond mass surrounded by and bonded to a mass of metal bonded carbide, such as cobalt cemented tungsten carbide. It is known to make these dies by high pressure-high temperature processes, typical conditions being 50 kbar and temperatures in excess of 1300.degree. C. The improvement comprises disposing within the reaction sub-assembly (e.g. metal carbide and diamond within a zirconium cup) a set of discs of specific materials in specified arrangements. For example, on one side of the mass of metal carbide and diamond is disposed one disc of a diamond catalyst/solvent and one disc of a refractory metal such as molybdenum, and on the other side are disposed at least two discs of one or more transition metals such as zirconium. These discs are generally placed inside the sub-assembly cup. By means of this process modification, process yields have been significantly improved through decreasing the occurrence of defects in the dies and by decreasing the reaction time.

Abstract translation: 公开了一种用于制造金属丝模头压块的工艺改进，其通常被描述为由金属结合的碳化物块（例如钴硬质合金碳化物）包围并结合的内部多晶金刚石块。 已知通过高压高温工艺制造这些模具，典型条件为50kbar，温度超过1300℃。改进包括设置在反应子组件内（例如，锆杯内的金属碳化物和金刚石） 一组特定材料的光盘在指定的安排。 例如，在金属碳化物和金刚石块的一侧设置金刚石催化剂/溶剂的一个盘和诸如钼的难熔金属的一个盘，并且在另一侧上设置至少两个一个或多个盘 过渡金属如锆。 这些盘通常放置在子组件杯内。 通过该方法的改进，通过减少模具中的缺陷的发生和减少反应时间，已经显着地改善了工艺产率。

公开(公告)号：US4534773A

公开(公告)日：1985-08-13

申请号：US566862

申请日：1983-12-29

Applicant: Cornelius Phaal ,  Noel J. Pipkin ,  Richard P. Burnand

Inventor： Cornelius Phaal ,  Noel J. Pipkin ,  Richard P. Burnand

IPC: B01J3/06 ,  B24D3/06 ,  B24D3/10 ,  B24D18/00 ,  B28D1/04 ,  C22C26/00 ,  E21B10/46 ,  E21B10/56 ,  E21B10/567 ,  B24D3/00

CPC classification number: E21B10/5673 ,  B01J3/062 ,  B24D3/06 ,  B24D3/10 ,  B24D99/005 ,  B28D1/041 ,  C22C26/00 ,  E21B10/46 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685

Abstract: An abrasive body is provided which has high strength and an ability to withstand high temperatures making it suitable as a tool insert for dressing tools and surface set drill bits. The body comprises a mass of diamond particles present in an amount of 80 to 90 percent by volume of the body and a second phase present in an amount of 10 to 20 percent by volume of the body, the mass of diamond particles containing substantial diamond-to-diamond bonding to form a coherent skeletal mass and the second phase containing nickel and silicon, the nickel being in the form of nickel and/or nickel silicide and the silicon being in the form of silicon, silicon carbide and/or nickel silicide. The abrasive bodies are made under conditions of elevated temperature and pressure suitable for diamond compact manufacture.

Abstract translation: 提供了具有高强度和耐高温能力的研磨体，使其适合作为修整工具和表面钻头的工具刀片。 身体包含以身体体积为80-90％（体积）存在的量的金刚石颗粒和以体积的10至20体积％存在的第二相，金刚石颗粒的质量含有大量金刚石 - 以形成相干骨架质量，而含有镍和硅的第二相，镍为镍和/或硅化镍的形式，硅为硅，碳化硅和/或硅化镍的形式。 研磨体在适合于金刚石紧凑制造的高温和高压条件下制成。

公开(公告)号：US4412980A

公开(公告)日：1983-11-01

申请号：US352249

申请日：1982-02-25

Applicant: Kazuo Tsuji ,  Shuji Yazu ,  Akio Hara

Inventor： Kazuo Tsuji ,  Shuji Yazu ,  Akio Hara

IPC: B01J3/06 ,  H01L21/48 ,  C01B31/06

CPC classification number: B01J3/062 ,  H01L21/4803 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685 ,  Y10T428/2982 ,  Y10T428/30

Abstract: The invention relates to a diamond sintered compact wherein diamond crystal particles are uniformly oriented in a particular direction and the method for producing the same, and has for an object to provide a diamond sintered compact having a high thermal conductivity particularly suitable for heat sink for use in the field of electronics.According to the invention, graphite is used as carbonaceous raw material, diamond crystal particles having such elongated shape that the ratio of the length of the long axis to that of the short axis is more than 2 being synthesized in such state that the greater part of the crystal particles have their long axes uniformly oriented in a particular direction, the crystal particles being sintered in the direction of the long axes thereof so that transformation of the graphite into diamond and sintering thereof may be accomplished synchronously. The invention has for an object to obtain a diamond sintered compact suitable for the aforesaid use by degassing reaction system raw material plugged into an air permeable container by heating it in vacuum in order to intercept gaseous components causing a decrease of thermal conductivity at the time of synthesizing diamond from carbonaceous material and a catalytic metal and sintering thereof, subsequently the air permeable part of the said container being sealed by means of soldering material preliminarily placed in contact with the said container.

Abstract translation: 本发明涉及金刚石烧结体，其中金刚石晶体颗粒沿特定方向均匀取向，并且其制造方法的目的是提供一种具有高导热性的金刚石烧结体，特别适用于散热器 在电子领域。 根据本发明，石墨用作碳质原料，具有这样细长形状的金刚石晶体颗粒，使得长轴与短轴的长度的比例大于2被合成为使得大部分 晶体颗粒具有沿特定方向均匀取向的长轴，晶体颗粒沿其长轴方向烧结，从而可以同时完成石墨转化为金刚石和烧结。 本发明的目的是获得一种适用于上述用途的金刚石烧结体，其通过在真空中加热而将插入到透气性容器中的反应系统原料脱气，以截留导致在 从碳质材料和催化金属合成金刚石并将其烧结，随后所述容器的透气部分通过预先与所述容器接触的焊料密封。

公开(公告)号：US4380471A

公开(公告)日：1983-04-19

申请号：US222812

申请日：1981-01-05

Applicant: Minyoung Lee ,  Lawrence E. Szala ,  Roy E. Tuft

Inventor： Minyoung Lee ,  Lawrence E. Szala ,  Roy E. Tuft

IPC: B01J3/06 ,  B22F7/06 ,  B24D18/00 ,  B22F3/14 ,  B22F7/00 ,  C04B31/16

CPC classification number: C04B35/645 ,  B01J3/062 ,  B22F7/06 ,  B24D3/06 ,  C04B35/52 ,  C04B35/6316 ,  C04B37/006 ,  C04B37/021 ,  C04B37/026 ,  B01J2203/062 ,  B01J2203/0635 ,  B01J2203/0655 ,  B01J2203/0685 ,  C04B2235/3826 ,  C04B2235/40 ,  C04B2235/427 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/5472 ,  C04B2235/604 ,  C04B2235/616 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/80 ,  C04B2237/122 ,  C04B2237/363 ,  C04B2237/401 ,  C04B2237/60 ,  C04B2237/61 ,  C04B2237/706 ,  C04B2237/708

Abstract: A polycrystalline diamond body infiltrated by a silicon atom-containing metal (e.g., silicon alloy) is bonded to a substrate comprising cemented carbide with a barrier of refractory material extending between the diamonds cemented together with silicon atom-containing binder and the substrate substantially precluding migration of the cementing medium (e.g., cobalt) from the carbide substrate into contact with the silicon atom-containing bonding medium in the diamond body. The process comprises subjecting a mass of diamond powder, a quantity of silicon atom-containing metal binder material, a cemented carbide body and a barrier made of material selected from the group consisting of tantalum, vanadium, molybdenum, zirconium, tungsten and alloys thereof to the simultaneous application of elevated temperature and pressure.

Abstract translation: 由含硅原子的金属（例如，硅合金）渗透的多晶金刚石体与包含硬质合金的基底结合，所述基底具有在与含硅原子的粘合剂粘合在一起的金刚石和基材之间延伸的耐火材料的屏障，基本上排除迁移 的来自碳化物衬底的固化介质（例如钴）与金刚石体中含硅原子的粘合介质接触。 该方法包括使金刚石粉末，一定数量的含硅原子的金属粘合剂材料，硬质合金体和由选自钽，钒，钼，锆，钨及其合金的材料制成的阻挡层经受一 同时应用高温和高压。

公开(公告)号：US4340576A

公开(公告)日：1982-07-20

申请号：US148214

申请日：1980-05-09

Applicant: Herbert M. Strong

Inventor： Herbert M. Strong

IPC: B01J3/06 ,  C01B31/06

CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068

Abstract: Means are described for suppressing spontaneous diamond nucleation in the vicinity of diamond seed material located in reaction vessel construction used in the growth of diamond by the process disclosed in U.S. Pat. No. 3,297,407--Wentorf, Jr.In assembly of the reaction vessel a portion of the lower surface of the plug of catalyst-solvent metal is disposed in contact with the diamond seed material. Preferably all of the balance of the lower surface area of the catalyst-solvent plug adjacent the seed material is covered with a disc or layer of a material different from the catalyst-solvent metal employed and selected from a list of specific materials that suppress diamond nucleation.

Abstract translation: 描述了用于通过美国专利公开的方法在位于用于生长金刚石的反应容器结构中的金刚石种子材料附近抑制自发金刚石成核的方法。 在反应容器的组装中，催化剂 - 溶剂金属的塞的下表面的一部分与金刚石种子材料接触。 优选地，邻近种子材料的催化剂 - 溶剂塞的下表面积的所有平衡被不同于所使用的催化剂 - 溶剂金属的材料的盘或层覆盖，并且选自抑制金刚石成核的具体材料的列表 。