公开(公告)号：US20060014358A1

公开(公告)日：2006-01-19

申请号：US11231103

申请日：2005-09-20

Applicant: William Sawyer ,  Jeffrey Borenstein

Inventor： William Sawyer ,  Jeffrey Borenstein

IPC: H01L21/76

CPC classification number: B81C1/00182 ,  B81C1/00579 ,  B81C3/001 ,  B81C2201/0191

Abstract: The invention provides a general fabrication method for producing MicroElectroMechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer. The method includes providing an SOI wafer that has (i) a handle layer, (ii) a dielectric layer, and (iii) a device layer, wherein a mesa etch has been made on the device layer of the SOI wafer, providing a substrate, wherein a pattern has been etched onto the substrate, bonding the SOI wafer and the substrate together, removing the handle layer of the SOI wafer, removing the dielectric layer of the SOI wafer, then performing a structural etch on the device layer of the SOI wafer to define the device.

Abstract translation: 本发明提供了使用绝缘体上硅（SOI）晶片生产微电子机械系统（MEMS）和相关器件的一般制造方法。 该方法包括提供SOI晶片，其具有（i）手柄层，（ii）电介质层和（iii）器件层，其中在SOI晶片的器件层上进行台面蚀刻，提供衬底 其中图案已被蚀刻到衬底上，将SOI晶片和衬底接合在一起，去除SOI晶片的手柄层，去除SOI晶片的电介质层，然后对SOI的器件层进行结构蚀刻 晶圆来定义设备。

公开(公告)号：US20050124138A1

公开(公告)日：2005-06-09

申请号：US10509007

申请日：2003-03-26

Applicant: Bernard Aspar ,  Marc Zussy ,  Jean-Frederic Clerc

Inventor： Bernard Aspar ,  Marc Zussy ,  Jean-Frederic Clerc

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/68 ,  H01L21/762 ,  H01L21/30 ,  H01L21/46

CPC classification number: H01L21/2007 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2203/036 ,  H01L21/6835 ,  H01L21/76251 ,  H01L2221/68359 ,  Y10S438/977

Abstract: This invention relates to a method for making a thin layer starting from a wafer comprising a front face with a given relief, and a back face, comprising steps consisting of: a) obtaining a support handle with a face acting as a bonding face; b) preparing the front face of the wafer, this preparation including incomplete planarisation of the front face of the wafer, to obtain a bonding energy E0 between a first value corresponding to the minimum bonding energy compatible with the later thinning step, and a second value corresponding to the maximum bonding energy compatible with the subsequent desolidarisation operation, the bonding energy E0 being such that E0=α.E, where E is the bonding energy that would be obtained if the front face of the wafer was completely planarised, α is the ratio between the incompletely planarised area of the front face of the wafer and the area of the front face of the wafer if it were completely planarised; c) solidarising the front face of the wafer on the bonding face of the support handle, by direct bonding; d) thinning the wafer starting from its back face until the thin layer is obtained; e) transferring the thin layer onto a usage support, involving separation from the support handle.

Abstract translation: 本发明涉及一种用于制造从包括具有给定浮雕的正面的晶片开始的薄层的方法和背面，其包括以下步骤：a）获得具有用作接合面的面的支撑手柄; b）制备晶片的前表面，该制备包括晶片正面的不均匀平面化，以获得与对应于与该晶片相容的最小结合能相对应的第一值之间的结合能E 0 < 随后的稀化步骤，以及对应于与随后的去聚合操作相容的最大结合能力的第二值，结合能E 0 0使得E 0 < 其中E是如果晶片的正面完全平面化将获得的结合能，α是晶片正面的不完全平坦化面积与晶片正面面积之间的比率，如果是 完全平整 c）通过直接粘合将支撑手柄的接合面上的晶片的正面固定; d）从其背面开始使晶片变薄，直到获得薄层; e）将薄层转移到使用支撑件上，包括从支撑手柄分离。

公开(公告)号：US20050070071A1

公开(公告)日：2005-03-31

申请号：US10913701

申请日：2004-08-06

Applicant: Francois Henley ,  Nathan Cheung

Inventor： Francois Henley ,  Nathan Cheung

IPC: B81C1/00 ,  H01L21/22 ,  H01L21/30 ,  H01L21/38 ,  H01L21/46

CPC classification number: H01L21/26506 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2658 ,  H01L21/76254

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选定的方式在表面下方的选定深度（20）处形成应力区域的步骤。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此所述切割动作提供扩张切割前缘以释放供体 来自供体衬底的剩余部分的材料。

公开(公告)号：US06790747B2

公开(公告)日：2004-09-14

申请号：US10268918

申请日：2002-10-09

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L2130

CPC classification number: H01L21/26506 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2658 ,  H01L21/76254

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选定的方式在表面下方的选定深度（20）处形成受应力区域的步骤。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此所述切割动作提供扩张切割前缘以释放供体 来自供体衬底的剩余部分的材料。

公开(公告)号：US06639289B1

公开(公告)日：2003-10-28

申请号：US09645733

申请日：2000-08-24

Applicant: Ken Maxwell Hays

Inventor： Ken Maxwell Hays

IPC: H01L2984

CPC classification number: B81C1/00595 ,  B81B2201/0242 ,  B81B2203/033 ,  B81C2201/0136 ,  B81C2201/0191 ,  B81C2203/031

Abstract: The method of the present invention provides a process for manufacturing MEMS devices having more precisely defined mechanical and/or electromechanical members. The method of the present invention begins by providing a partially sacrificial substrate and a support substrate. In order to space the mechanical and/or electromechanical members of the resulting MEMS device above the support substrate, mesas are formed on the support substrate. By forming the mesas on the support substrate instead of the partially sacrificial substrate, the mechanical and/or electromechanical members can be more precisely formed from the partially sacrificial substrate since the inner surface of the partially sacrificial substrate is not etched and therefore remains planar. As such, trenches can be precisely etched through the :planar inner surface of the partially sacrificial substrate to define mechanical and/or electromechanical members of the MEMS device. The present invention also provides an improved MEMS device, such as an improved gyroscope, that includes more precisely and reliably defined mechanical and/or electromechanical members.

Abstract translation: 本发明的方法提供了一种用于制造具有更精确定义的机械和/或机电构件的MEMS装置的方法。 本发明的方法开始于提供部分牺牲衬底和支撑衬底。 为了将所得MEMS器件的机械和/或机电部件放置在支撑基板上方，台面形成在支撑基板上。 通过在支撑衬底上形成台面而不是部分牺牲衬底，可以从部分牺牲衬底更精确地形成机械和/或机电构件，因为部分牺牲衬底的内表面没有被蚀刻并因此保持平面。 这样，可以通过部分牺牲衬底的平面内表面精确地蚀刻沟槽，以限定MEMS器件的机械和/或机电部件。 本发明还提供了一种改进的MEMS器件，例如改进的陀螺仪，其包括更准确且可靠地定义的机械和/或机电元件。

公开(公告)号：US06458672B1

公开(公告)日：2002-10-01

申请号：US09705347

申请日：2000-11-02

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L2120

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A method for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate. A step of increasing a built-in energy state of the substrate is also included.

Abstract translation: 一种从供体衬底（10）形成材料（12）的膜的方法。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体衬底的选定区域，以在所选择的深度（20）处引发衬底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，以使剩余的所述供体材料释放 部分供体基质。 还包括增加衬底的内置能量状态的步骤。

公开(公告)号：US20020106870A1

公开(公告)日：2002-08-08

申请号：US09483393

申请日：2000-01-13

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L021/00 ,  H01L021/44 ,  H01L021/48 ,  H01L021/50 ,  H01L021/8238

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US20020056519A1

公开(公告)日：2002-05-16

申请号：US09878152

申请日：2001-06-07

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: B32B005/16

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to form a pattern at a selected depth (20) underneath the surface. The particles have a concentration sufficiently high to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选择的方式通过施主衬底（10）的表面引入能量粒子（22）以在表面下方的选定深度（20）处形成图案的步骤。 颗粒具有足够高的浓度以在所选择的深度上限定施主衬底材料（12）。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US06290804B1

公开(公告)日：2001-09-18

申请号：US09026793

申请日：1998-02-20

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: B32B3114

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to form a pattern at a selected depth (20) underneath the surface. The particles have a concentration sufficiently high to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选择的方式通过施主衬底（10）的表面引入能量粒子（22）以在表面下方的选定深度（20）处形成图案的步骤。 颗粒具有足够高的浓度以在所选择的深度上限定施主衬底材料（12）。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US06048411A

公开(公告)日：2000-04-11

申请号：US25966

申请日：1998-02-19

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238 ,  H01L29/06

CPC classification number: H01L21/187 ,  B81C1/0038 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  B81C2201/0191 ,  B81C2201/0192 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893

Abstract: A hybrid silicon-on-silicon substrate. A thin film (2101) of single-crystal silicon is bonded to a target wafer (46). A high-quality bond is formed between the thin film and the target wafer during a high-temperature annealing process. It is believed that the high-temperature annealing process forms covalent bonds between the layers at the interface (2305). The resulting hybrid wafer is suitable for use in integrated circuit manufacturing processes, similar to wafers with an epitaxial layer.