Abstract:
A system for inspecting a sample including a detector, either a photomultiplier tube or an electron-bombarded image sensor, that is positioned to receive light from the sample. The detector includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. The semiconductor photocathode includes silicon, and further includes a pure boron coating on at least one surface.
Abstract:
An internal portion of a photomultiplier tube (PMT) having a reflective photocathode array, and a method for manufacturing the same, are provided. The internal portion of the PMT comprises the reflective photocathode array and at least one dynode structure corresponding to the array of reflective photocathodes. Each reflective photocathode receives light and from the light, generates photoelectrons which then travel towards the at least one dynode structure. Upon the photoelectrons making contact with the at least one dynode structure, the photoelectrons are multiplied.
Abstract:
The present invention provides a gamma-neutron detector based on mixtures of thermal neutron absorbers that produce heavy-particle emission following thermal capture. In one configuration, B-10 based detector is used in a parallel electrode plate geometry that integrates neutron moderating sheets, such as polyethylene, on the back of the electrode plates to thermalize the neutrons and then detect them with high efficiency. The moderator can also be replaced with plastic scintillator sheets viewed with a large area photomultiplier tube to detect gamma-rays as well. The detector can be used in several scanning configurations including portal, drive-through, drive-by, handheld and backpack, etc.
Abstract:
The present invention provides a gamma-neutron detector based on mixtures of thermal neutron absorbers that produce heavy-particle emission following thermal capture. In one configuration, B-10 based detector is used in a parallel electrode plate geometry that integrates neutron moderating sheets, such as polyethylene, on the back of the electrode plates to thermalize the neutrons and then detect them with high efficiency. The moderator can also be replaced with plastic scintillator sheets viewed with a large area photomultiplier tube to detect gamma-rays as well. The detector can be used in several scanning configurations including portal, drive-through, drive-by, handheld and backpack, etc.
Abstract:
An electronic amplifying substrate, including: a glass base material having an insulating property; conductive layers formed on both main surfaces of the glass base material; and a plurality of through holes formed on a lamination body of the glass base material and the conductive layer, wherein an electric field is formed in the through hole by a potential difference between both conductive layers during application of a voltage to a surface of the conductive layer so that an electron avalanche amplification occurs in the through hole, and an insulation part is formed on at least one main surface of the glass base material, with one of the end portions of the insulation part formed to surround an opening part of the through hole of the glass base material, and the other end portion formed in contact with the end portions of the conductive layers.
Abstract:
The invention provides a switchable photomultiplier switchable between a detecting state and a non-detecting state including a cathode upon which incident radiation is arranged to impinge. The photomultiplier also includes a series of dynodes arranged to amplify a current created at the cathode upon detection of photoradiation. The invention also provides a detection system arranged to detect radiation-emitting material in an object. The system includes a detector switchable between a detecting state in which the detector is arranged to detect radiation and a non-detecting state in which the detector is arranged to not detect radiation. The system further includes a controller arranged to control switching of the detector between the states such that the detector is switched to the non-detecting state while an external radiation source is irradiating the object.
Abstract:
The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.
Abstract:
A method for detecting radiation is disclosed that includes forming a detector having a photocathode (22) with a protective layer (22c) of cesium, oxygen and fluorine; a microchannel plate (MCP) (24); and an electron receiver (26). Radiation is received at the photocathode (22). The photocathode (22) discharges electrons (34) in response to the received photons. Discharged electrons (34) are accelerated from the photocathode (22) to the input face (24a) of the microchannel plate (24). The electrons (34) are received at the input face (24a) of the microchannel plate (24). A cascade of secondary emission electrons (36) is generated in the microchannel plate (24) in response to the received electrons (34). The secondary emission electrons (36) are emitted from the output face (24b) of the microchannel plate (24). Secondary emission electrons (36) are received at the electron receiver (26). An output characteristic of the secondary emission electrons (36) is produced.
Abstract:
Therefore, use of the electron lens forming electrodes 115 and 117 flattens the potential distribution in the longitudinal direction of the first dynode 107a in front of the first dynode 107a, that is, between the dynodes 107a and 107b. As a result, both photoelectrons emitted from the peripheral edge of the cathode 3 and photoelectrons emitted from the center region of the cathode 3 travel substantially in a straight line from the first dynode 107a after being multiplied thereby to impinge on the second dynode 107b. Since this structure reduces deviation in the transit distance of photoelectrons based on the irradiated position of light on the cathode 3, the structure also reduces the cathode transit time difference (CTTD) according to the irradiated position of light and a transit time spread (TTS) when light is irradiated on the entire surface. In particular, since the transit distance between the dynodes 107a and 107b is greater than that between other dynodes, the CTTD and TTS can be effectively reduced by providing the electron lens forming electrodes 115 and 117.
Abstract:
Provided are a photocathode plate capable of stably achieving a high sensitive property, and an electron tube using such a photocathode plate. In a photomultiplier tube 1, an insulating layer 63 is formed between a semiconductor electron emission layer 51 in a photocathode plate 23A, and a first electrode 65 electrically connected to an electron releasing portion 59. This insulating layer 63 permits the photocathode plate 23A to be cleaned by heat cleaning at a high temperature, in a stage before formation of an active layer 61 on an exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59. This makes it feasible to effectively clean the exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59 and to stabilize the physical properties of the exposed region. In consequence, a higher sensitive property can be stably achieved in the photocathode plate 23A and in the photomultiplier tube 1 using the photocathode plate 23A.