Vehicle horn configuration structure

    公开(公告)号:US12252086B2

    公开(公告)日:2025-03-18

    申请号:US17960761

    申请日:2022-10-05

    Abstract: The vehicle horn configuration structure includes: a bumper beam arranged at a front of a vehicle and extending in a vehicle left-right direction; a bumper cover arranged at a position forward of the bumper beam in a vehicle front-rear direction; a horn component arranged at a position rearward of the bumper beam in the vehicle front-rear direction, and arranged at a position so that a sound-emitting part faces downward in a vehicle up-down direction and is located above a lower end of the bumper beam; and a duct component extending in the vehicle front-rear direction and arranged at a position located between the horn component and the bumper cover in the vehicle front-rear direction to guide a sound of the horn component to an opening provided on the bumper cover.

    Photoelectric conversion element, imaging element, optical sensor, and compound

    公开(公告)号:US12250881B2

    公开(公告)日:2025-03-11

    申请号:US17145412

    申请日:2021-01-11

    Abstract: The present invention is to provide a photoelectric conversion element having excellent heat resistance. In addition, an imaging element and an optical sensor which include the photoelectric conversion element are provided. Furthermore, a compound applied to the photoelectric conversion element is provided. A photoelectric conversion element according to the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1). In Formula (1), Y1 represents a group represented by Formula (1-1) or a group represented by Formula (1-2).

    Circuit board and manufacturing method thereof

    公开(公告)号:US12250769B2

    公开(公告)日:2025-03-11

    申请号:US17842796

    申请日:2022-06-17

    Abstract: A circuit board includes a metal substrate, a resin layer, an insulating layer, and a first conductive structure. The metal substrate has a first through hole, and the first through hole has a first width. A portion of the resin layer is disposed in the first through hole. The resin layer has a second through hole. The second through hole has a second width. The insulating layer is disposed on at least one surface of the metal substrate, and a portion of the insulating layer contacts the resin layer. The first conductive structure is disposed in the second through hole. The first conductive structure penetrates through the metal substrate. The first width is greater than the second width. A manufacturing method of the circuit board is also provided.

    Electrostatic transducer
    109.
    发明授权

    公开(公告)号:US12249930B2

    公开(公告)日:2025-03-11

    申请号:US18313362

    申请日:2023-05-07

    Abstract: An electrostatic transducer (1) includes: an insulator sheet (11); a first electrode sheet (12); a lead (30); a first bonding part (61), electrically bonding the first electrode sheet (12) with a core wire (30a) of the lead (30) in a first area (Pa) where the first electrode sheet (12) and the core wire (30a) of the lead (30) are disposed overlapping each other; and a second bonding part (62), bonding the insulator sheet (11) with a coating (30b) of the lead (30) in a second area (Pb) where the insulator sheet (11) and the coating (30b) of the lead (30) are disposed overlapping each other.

    Semiconductor structure
    110.
    发明授权

    公开(公告)号:US12249607B2

    公开(公告)日:2025-03-11

    申请号:US18152781

    申请日:2023-01-11

    Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a carrier substrate, a trap-rich layer, a dielectric layer, an interconnect structure, a device structure layer and a circuit structure. The trap-rich layer is disposed on the carrier substrate. The dielectric layer is disposed on the trap-rich layer. The interconnect structure is disposed on the dielectric layer. The device structure layer is disposed on the interconnect structure and electrically connected to the interconnect structure. The circuit structure is disposed on the device structure layer and electrically connected to the device structure layer.

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