Abstract:
A machining simulation apparatus is arranged in a machine tool having a tool holding mechanism, a workpiece holding mechanism, a drive mechanism and a numerical controller, and provided with: an actual CCD camera for imaging a tool held by the tool holding mechanism and the workpiece holding mechanism not holding a workpiece to generate actual image data; a model data update processing section for generating model data relating to when moving the holding mechanisms based on the operation command received from the numerical controller and the model data of the holding mechanisms, tool and workpiece; a virtual image generation processing section for generating virtual image data of the tool and workpiece based on the generated model data; and a rendering processing section for generating composite image data by superimposing the virtual image on the actual image, and displaying the composite image data on a screen display device.
Abstract:
Disclosed is a method of treating a bodily lumen with a stent, the method comprising: disposing a stent within a bodily lumen, the stent comprising a plurality of deformable struts that are substantially circumferentially aligned and are configured to selectively deform in a circumferential direction in localized regions in the struts upon application of an outward radial force; and expanding the stent by applying the outward radial force, wherein the outward radial force causes selective deformation of the deformable struts in a localized region in the struts.
Abstract:
Methods for improved stent retention on an expandable member during delivery are disclosed. Methods include fabricating delivery systems including a degradable or water soluble sheath over the stent, the expandable member, or both for improving retention of the stent on the expandable member during delivery.
Abstract:
A device and a method of manufacturing an implantable medical device, such as a stent, are described herein. The device includes a metallic region composed of a bioerodable metal and a polymer region composed of a biodegradable polymer contacting the metallic region. The metallic region may erode at a different rate when exposed to bodily fluids than the polymer region when exposed to bodily fluids. In certain embodiments, the polymer region is an outer layer and the metallic region is an inner layer of the device.
Abstract:
This disclosure describes a method for crimping a polymeric stent onto a catheter for percutaneous transluminal coronary angioplasty or other intraluminal interventions. The method comprises crimping the stent onto a catheter when the polymer is at a target temperature other than ambient temperature. The polymer can optionally comprise drug(s).
Abstract:
A system for semiconductor wafer manufacturing, comprises a chamber process path for processing the wafer, and a device operable to remove particles from the wafer by electrostatic and electromagnetic methodologies wherein the device is installed in the chamber process path.
Abstract:
Methods of sterilizing medical devices, including implantable medical devices like stents, chemically and with radiation are disclosed. Methods of preparing a sterile, packaged medical device, including a sterile, packaged implantable medical device or stent are disclosed.
Abstract:
A modified soft output Viterbi algorithm (SOVA) detector receives a sequence of soft information values and determines a best path and an alternate path for each soft information value and further determines, when the best and alternate paths lead to the same value for a given soft information value, whether there is a third path departing from the alternate path that leads to an opposite decision with respect to the best path for a given soft information value. The SOVA detector then considers this third path when updating the reliability of the best path. The modified SOVA detector achieves max-log-map equivalence effectively through the Fossorier approach and includes modified reliability metric units for the first N stages of the SOVA detector, where N is the memory depth of a given path, and includes conventional reliability metric units for the remaining stages of the detector.
Abstract:
A device for preventing current-leakage is located between a transistor and a capacitor of a memory cell. The two terminals of the device for preventing current-leakage are respectively connected with a slave terminal of the transistor and an electric pole of the capacitor. The device for preventing current-leakage has at least two p-n junctions. The device for preventing current-leakage is a lateral silicon controlled rectifier, a diode for alternating current, or a silicon controlled rectifier. By utilizing the driving characteristic of the device for preventing current-leakage, electric charge stored in the capacitor hardly passes through the device for preventing current-leakage when the transistor is turned off to improve the current-leakage problem.