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公开(公告)号：US11941961B2
公开(公告)日：2024-03-26
申请号：US17823709
申请日：2022-08-31
Applicant: STMicroelectronics S.r.l.
Inventor： Enrico Rosario Alessi , Fabio Passaniti
Abstract: In accordance with an embodiment, a detection device includes: an infrared temperature sensor configured to provide a temperature signal associated with an heat emission of at least one individual within a monitored area; an electrostatic-charge-variation sensor configured to provide a charge-variation signal indicative of a variation of electrostatic charge associated with the at least one individual; and a processing unit, coupled to the infrared temperature sensor and to the electrostatic-charge-variation sensor, the processing unit configured to detect a presence of the at least one individual within the monitored area by receiving the temperature signal and the charge-variation signal, and jointly processing the temperature signal and charge.
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公开(公告)号：US20240085960A1
公开(公告)日：2024-03-14
申请号：US18516453
申请日：2023-11-21
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Federico RIZZARDINI , Lorenzo BRACCO
IPC: G06F1/16 , G01B7/31 , G06F1/3231 , G06F1/3246
CPC classification number: G06F1/1677 , G01B7/31 , G06F1/1616 , G06F1/3231 , G06F1/3246 , G01C1/00
Abstract: The present disclosure is directed to a device and method for lid angle detection that is accurate even if the device is activated in an upright position. While the device is in a sleep state, first and second sensor units measure acceleration and angular velocity, and calculate orientations of respective lid components based on the acceleration and angular velocity measurements. Upon the device exiting the sleep state, a processor estimates the lid angle using the calculated orientations, sets the estimated lid angle as an initial lid angle, and updates the initial lid angle using, for example, two accelerometers; two accelerometers and two gyroscopes; two accelerometers and two magnetometers; or two accelerometers, two gyroscopes, and two magnetometers.
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公开(公告)号：US11929674B2
公开(公告)日：2024-03-12
申请号：US17732281
申请日：2022-04-28
Applicant: STMicroelectronics S.r.l.
Inventor： Francesco Pulvirenti
IPC: H02M3/07
CPC classification number: H02M3/07
Abstract: In an embodiment, a voltage multiplier comprises an input node, an output node, and first and second control nodes for receiving first and second clock signals defining two commutation states. An ordered sequence of intermediate nodes is coupled between the input and output nodes and includes two ordered sub-sequences. Capacitors are coupled: between each odd intermediate node in the first sub-sequence and the first control node; between each even intermediate node in the first sub-sequence and the second control node; between each odd intermediate node in the second sub-sequence and a corresponding odd intermediate node in the first sub-sequence; and between each even intermediate node in the second sub-sequence and a corresponding even intermediate node in the first sub-sequence. The circuit comprises selectively conductive electronic components coupled to the intermediate nodes.
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104.发明公开公开(公告)号：US20240079237A1
公开(公告)日：2024-03-07
申请号：US18363349
申请日：2023-08-01
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Mario Giuseppe SAGGIO , Cateno Marco CAMALLERI , Gabriele BELLOCCHI , Simone RASCUNA'
CPC classification number: H01L21/0485 , H01L29/401 , H01L29/66068
Abstract: Method of manufacturing an electronic device, comprising forming an ohmic contact at an implanted region of a semiconductor body. Forming the ohmic contact provides for performing a high-temperature thermal process for allowing a reaction between a metal material and the material of the semiconductor body, for forming a silicide of the metal material. The step of forming the ohmic contact is performed prior to a step of forming one or more electrical structures which include materials that may be damaged by the high temperature of the thermal process of forming the silicide.
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公开(公告)号：US20240072922A1
公开(公告)日：2024-02-29
申请号：US17898335
申请日：2022-08-29
Applicant: STMICROELECTRONICS S.R.L.
IPC: H04J3/06
CPC classification number: H04J3/0685 , H04J3/0617
Abstract: An integrated circuit includes a control circuit, a primary sensor device coupled to the control circuit, and a plurality of groups of secondary sensor devices coupled to the primary sensor device. The primary sensor device receives a master clock signal from the control device and outputs, to each group of secondary sensor devices, a respective secondary clock signal with a frequency lower than the primary clock signal. The primary sensor device generates primary sensor data. The primary sensor device receives secondary sensor data from each group of secondary sensor devices. The primary sensor device combines the primary sensor data and all of the secondary sensor data into a sensor data stream with a time division-multiplexing scheme and outputs the sensor data stream to the control circuit.
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Patent Agency Ranking
公开(公告)号：US11909849B2
公开(公告)日：2024-02-20
申请号：US16556593
申请日：2019-08-30
Applicant: STMicroelectronics S.r.l.
Inventor： Lorenzo Guerrieri , Angelo Poloni , Edoardo Lauri
CPC classification number: H04L69/18 , H04L27/0012 , H04L27/12 , H04L27/2643 , H04L27/2666 , H04B2203/5408
Abstract: A communication circuit supports a first communication protocol and a second communication protocol that is different from the first communication protocol. A number of signals include first signals conveying first information messages and second signals conveying second information messages. The first information messages include a repetitive message having fixed repeated content and the second information messages include a non-repetitive message having variable content. The first signals and the second signals are transmitted via the communication circuit using the first communication protocol for the first signals and the second communication protocol for the second signals.
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107.发明授权公开(公告)号：US11898943B2
公开(公告)日：2024-02-13
申请号：US17562829
申请日：2021-12-27
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Santo Alessandro Smerzi
CPC classification number: G01M5/0041 , G01L1/18 , G01L5/162
Abstract: A stress sensor includes: a substrate, having a face and a recess, open to the face; and a sensor chip of semiconductor material, housed in the recess and bonded to the substrate, the sensor chip being provided with a plurality of sensing components of piezoresistive material. The substrate has a thickness which is less by at least one order of magnitude with respect to a main dimension of the face. Further, the sensor chip has a thickness which is less by at least one order of magnitude with respect to the thickness of the substrate, and a Young's module of the substrate and a Young's module of the sensor chip are of the same order of magnitude.
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公开(公告)号：US20240043265A1
公开(公告)日：2024-02-08
申请号：US18359754
申请日：2023-07-26
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Giorgio ALLEGATO , Silvia NICOLI , Anna ALESSANDRI , Matteo GARAVAGLIA
CPC classification number: B81B7/0022 , B81C1/00269 , B81B2201/0228 , B81B2203/0315 , B81B2207/053 , B81C2203/0154 , B81C2203/0109 , B81C2203/038
Abstract: Electronic device including: a MEMS sensor device including a functional structure which transduces a chemical or physical quantity into a corresponding electrical quantity; a cap including a semiconductive substrate; and a bonding dielectric region, which mechanically couples the cap to the MEMS sensor device. The cap further includes a conductive region, which extends between the semiconductive substrate and the MEMS sensor device and includes: a first portion, which is arranged laterally with respect to the semiconductive substrate and is exposed, so as to be electrically coupleable to a terminal at a reference potential by a corresponding wire bonding; and a second portion, which contacts the semiconductive substrate.
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公开(公告)号：US11894810B2
公开(公告)日：2024-02-06
申请号：US17952574
申请日：2022-09-26
Applicant: STMicroelectronics S.r.l.
Inventor： Mattia Fausto Moretti , Paolo Pulici , Alessio Facen
CPC classification number: H03F1/26 , H03F3/45192
Abstract: A circuit arrangement, including: a circuit configured to synthesize a resistor having a resistance value having a variation in time equivalent to a resistance variation of a sensor resistor applied with a resistance bias voltage and a resistance current bias, wherein the circuit includes: an amplifier comprising an input transistor; a bias current generator comprising a control node coupled to an output of the input transistor, wherein the bias current generator is configured to generate a bias current flowing in the input transistor; and a further current generator configured to generate a current at least proportional to the resistance bias current and coupled to the output of the input transistor, wherein the resistance bias voltage is applied to an input of the amplifier, and wherein a transconductance of the input transistor is at least proportional to the resistance of the sensor resistor.
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公开(公告)号：US11894657B2
公开(公告)日：2024-02-06
申请号：US17360381
申请日：2021-06-28
Inventor： Romeo Letor , Vanni Poletto , Antoine Pavlin , Nadia Lecci , Alfio Russo
CPC classification number: H01S5/06216 , H01S5/0261 , H03K5/07
Abstract: An embodiment pulse generator circuit comprises a first electronic switch coupled between first and second nodes, and a second electronic switch coupled between the second node and a reference node. An LC resonant circuit comprising an inductance and a capacitance is coupled between the first and reference nodes along with charge circuitry comprises a further inductance in a current flow line between a supply node and an intermediate node in the LC resonant circuit. Drive circuitry of the electronic switches repeats, during a sequence of switching cycles, charge time intervals, wherein the capacitance in the LC resonant circuit is charged via the charge circuit, and pulse generation time intervals, wherein a pulsed current is provided to the load via the first and second nodes. The charge and pulse generation time intervals are interleaved with oscillation time intervals where the LC resonant circuit oscillates at a resonance frequency.
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