Abstract:
An optical modulator comprises a Z-cut lithium niobate substrate on which is formed a Mach-Zehnder interferometer having two generally parallel waveguides lying beneath a buffer layer of dielectric material. First and second ground electrodes and a hot electrode are disposed on the buffer layer, the first and second ground electrodes being spaced either side of the hot electrode, the hot electrode and the first ground electrode being proximate to at least apart of the respective waveguides. The electrode structure is unsymmetrical in that (a) the hot electrode and the first ground electrode each have a width substantially less than that of the second ground electrode and or (b) the spacing between the first ground and hot electrodes is different from the spacing between the second ground and hot electrodes. whereby a range of chirp values can be obtained. When the spacing between the first ground and hot electrodes is smaller than the spacing between the second ground and hot electrodes, and preferably the hot and first ground electrodes have a width not exceeding 15 .μm, the modulator is capable of operation at frequencies above 10 GHz, possibly up to around 40 GHz.
Abstract:
The present invention provides an optical modulation element module which is capable of the optical modulation for analog transmission with a low driving voltage and low chirp.An optical modulation element module, in which Mach-Zehnder type optical modulation element 50 having a Mach-Zehnder type waveguide unit having two branched waveguides on a substrate which has electro-optical effect and two modulation electrodes which apply a modulation signal to each branched waveguide, optical input and output units for inputting and outputting a light wave to and from the optical modulation element, and a modulation signal input unit 56 for inputting the modulation signal into the modulation electrodes are placed in a case 51, includes a transformer branching unit 57 in which the modulation signal input unit which corresponds to the two modulation electrodes is formed as one terminal and which divides the modulation signal from the modulation signal input unit into two signals, and applies the divided modulation signals to each modulation electrode.
Abstract:
A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which then transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index.
Abstract:
The invention discloses phase-shifters, modulators, and method that produces a smaller π by means of a field excitation using multiple electrodes. A negative signal is introduced that travels with the positive signal, which enhances the electric field significantly. The field enhancement is provided by the superposition of the fields accumulated from each electrode. A base or substrate material can be made from any compound having linear electro-optic properties, such as lithium niobate, lithium tantalite, potassium lithium niobate, potassium titanyl phosphate or gallium-arsenide. For lithium niobate, there are two possible orientations of electric field, z-cut orientation or x-cut orientation.
Abstract:
The present invention relates to an optical modulator including an optical waveguide, and at least one CPW-to-CPS transition. The CPW segments include a hot electrode; and a ground plane disposed on each side of the hot electrode, and they share a ground plane. The CPS segment extends along an interaction length of the modulator. In one embodiment, two driving signals are applied so that the modulator operates as a dual-drive modulator. In another embodiment, a domain-inverted region is formed in a substrate of the dual-drive modulator to overlap with one arm of the optical waveguide (MZI) and invert a sign of a phase shift induced in that arm. Finally, a fixed chirp can be introduced into the dual-drive modulator by asymmetrically positioning the interferometer arms into gaps of the CPW segments with respect to the hot electrode, and by employing unequal width gaps in the CPW segments.
Abstract:
Electro-optical method and device for modulation of light are presented providing a substantially balanced voltage-phase response of the device in two orthogonal polarization directions substantially irrespective of applied voltages. The device comprises a crystal material of a predetermined orientation of the plane of propagation of light therethrough, formed with at least one waveguide channel directed in a predetermined direction, and at least two electrodes accommodated at opposite sides of the waveguide channel. The substantially balanced voltage-phase response is achieved by shifting the electrodes relative to the axis of the waveguide channel a predetermined distance in a certain direction. The device may be designed so as to operate as a phase modulator or an amplitude modulator.
Abstract:
A quantum-confined Stark effect quantum-dot optical modulator includes an interferometer having a beam splitter, first and second parallel optical branches fed by the beam splitter and a beam combiner fed by the first and second parallel optical branches and a laser for feeding a laser beam to the beam splitter. First and second optical phase shifters are provided in respective ones of the first and second parallel optical branches. Each optical phase shifter includes an intrinsic semiconductor crystalline planar layer and p-type and n-type planar semiconductor layers on opposite faces of the intrinsic semiconductor crystalline planar layer, the intrinsic layer lying in a plane parallel to a direction of propagation of the laser beam in the respective optical branch. The intrinsic layer has plural layers of planar arrays of quantum dots therein. A reverse bias D.C. voltage source is connected across the p-type and n-type layers.
Abstract:
An electro-optic modulator having a continuously adjustable chirp is provided. Optical signals input into the electro-optic modulator are divided into portions which are phase modulated in opposite senses, one portion imparted with a positive chirp and the other with a negative chirp. Variable couplers are used to adjust (by way of adjusting their coupling ratios) the amount of power allocated between the optical signals contributing to the positive chirp and the power of signals contributing to the negative chirp so that when the optical signals are combined an optical signal with an adjustable chirp is produced.
Abstract:
An optical waveguide for guided an incident light is formed on a substrate having an electro-optic effect. A first buffer layer is formed to cover an upper surface of the substrate. A conductive film is formed above the first buffer layer. A center electrode and a ground electrode are formed for applying a voltage in order to induce an electric field in the optical waveguide. A second buffer layer is formed between the conductive film and at least one of the center electrode and the ground electrode. The conductive film is formed to be present on at least a part below the ground electrode. A light guided through the optical waveguide is modulated by changing a phase by a voltage applied to the optical waveguide. Thereby, a thermal drift can be effectively restricted so that an optical modulation device having excellent electric characteristics can be realized.
Abstract:
A process is given to protect polymer modulators during push-pull poling employing high voltages to the electrodes is given where a thin layer of dielectric material is applied to the electrodes prior to poling, applying the direct current high voltage, and removing the dielectric after completion of poling.