Abstract:
A semiconductor device includes a lower barrier layer 12 composed of a layer of AlxGa1-xN (0≦x≦1) in a state of strain relaxation, and a channel layer 13, which is composed of a layer of InyGa1-yN (0≦y≦1) disposed on the lower barrier layer 12, has band gap that is smaller than band gap of the lower barrier layer 12, and exhibits compressive strain. A gate electrode 1G is formed over the channel layer 13 via an insulating film 15 and a source electrode 1S and a drain electrode 1D serving as ohmic electrodes are formed over the channel layer 13. The insulating film 15 is constituted of polycrystalline or amorphous member.
Abstract translation:半导体器件包括在应变松弛的状态下由Al x Ga 1-x N(0& nlE; x≦̸ 1)层构成的下阻挡层12,以及由In y Ga 1-y N(0< nlE; 1)层组成的沟道层13。 y); 1)设置在下阻挡层12上,具有小于下阻挡层12的带隙的带隙,并且表现出压缩应变。 在沟道层13上经由绝缘膜15形成栅极电极1G,在沟道层13上形成有用作欧姆电极的源电极1S和漏电极1D。绝缘膜15由多晶或非晶构成。
Abstract:
A container-enclosed fullerene, a method of manufacturing the same, and a method of storing fullerene are provided, that make it possible to inhibit alteration of fullerene, especially that make it possible to prevent degradation of the solubility to solvent. A container-enclosed fullerene includes fullerene hermetically enclosed in a container with a high degree of vacuum. The internal pressure of the container is preferably 10 Pa or lower. The fullerene is preferably a metal encapsulated fullerene. The container-enclosed fullerene is manufactured by filling fullerene in a container, evacuating the container, and thereafter sealing the container.
Abstract:
A laser machining device 1 includes a laser light source 10, a spatial light modulator 20, a controller 22, a converging optical system 30, and a shielding member 40. The phase-modulating spatial light modulator 20 inputs a laser beam outputted from the laser light source 10, displays a hologram modulating a phase of the laser beam at each of a plurality of pixels arranged two-dimensionally, and outputs the phase-modulated laser beam. The controller 22 causes the spatial light modulator 20 to display a plurality of holograms sequentially, lets the converging optical system 30 converge the laser beam outputted from the spatial light modulator 20 at converging positions having a fixed number of M, selectively places N converging positions out of the M converging positions into a machining region 91, and machines an object to be machined 90.
Abstract:
An occupant detection sensor for detecting an occupant seating state on a seat comprises: a contact pressure sensor section including a pair of opposed electrodes arranged parallel to a seating face part of the seat; an electrostatic sensor section including a main electrode arranged parallel to the seating face part of the seat and a guard electrode arranged between the main electrode and a seat frame, the guard electrode and the main electrode having a same electric potential; a capacitance measuring section for measuring a first capacitance between the opposed electrodes and a second capacitance between the main electrode and ground; and an occupant distinguishing section for distinguishing a seating state of the occupant based on the first capacitance and the second capacitance.
Abstract:
Provided is a semiconductor device capable of suppressing an occurrence of a punch-through phenomenon.A semiconductor device includes a substrate 1, a first n-type semiconductor layer 2, a p-type semiconductor layer 3, a second n-type semiconductor layer 4, a drain electrode 13, a source electrode 11, a gate electrode 12, and a gate insulation film 21, wherein the first n-type semiconductor layer 2, the p-type semiconductor layer 3, and the second n-type semiconductor layer 4 are laminated on the substrate 1 in this order. The drain electrode 13 is in ohmic-contact with the first n-type semiconductor layer 2. The source electrode 11 is in ohmic-contact with the second n-type semiconductor layer 4. An opening portion to be filled or a notched portion that extends from an upper surface of the second n-type semiconductor layer 4 to an upper part of the first n-type semiconductor layer 2 is formed at a part of the p-type semiconductor layer 3 and a part of the second n-type semiconductor layer 4. The gate electrode 12 is in contact with an upper surface of the first n-type semiconductor layer 2, side surfaces of the p-type semiconductor layer 3, and side surfaces of the second n-type semiconductor layer 4 at inner surfaces of the opening portion to be filled or a surface of the notched portion via the gate insulation film 21. The p-type semiconductor layer 3 has a positive polarization charge at a first n-type semiconductor layer 2 side in a state where a voltage is applied to none of the electrodes.
Abstract:
It is required to qualitatively design a circuitry device in which not only in a small-signal simulation but also in a large-signal simulation, loop oscillation and motorboating oscillation of an amplifier are precisely predicted to suppress oscillation without severing a loop or without inserting a circulator. To remove insertion loss due to a probe resistor Rx, a negative resistor −Rx/2 is arranged at both ends thereof. To prevent consumption of a DC bias in the probe, a DC block is applied. Further, to remove thermal noise caused by an actual resistor to reduce influence on a noise factor NF, the noise temperature (environmental temperature) of the actual resistor is set to zero Kelvin.
Abstract:
After a liquid sample between a sample-holding platform 11 and a window plate 22 is measured, a window plate holder 23 is raised, and a head 14 is moved from a standby position into the gap between the window plate 22 and the sample-holding platform 11. Then, the window plate holder 23 is lowered so as to press the window plate 22 onto the head 14 until the head 14 touches the sample-holding platform 11 below. Then the head 14 is swung back to the original position, whereby a wipe material 40 fitted on the head 14 simultaneously wipes off the liquid sample from both the lower surface of the window plate 22 and the upper surface of the sample-holding platform 11. Pressing the arch springs 35 enables the wipe material 40 to be easily attached to or detached from the head 14.
Abstract:
An object to be processed 1 is irradiated with a laser light L modulated by a reflection type spatial light modulator 203 such that aberration of the laser light L converged inside the object 1 becomes a predetermined aberration or less. Therefore, aberration of the laser light L generated at a position on which a converging point P of the laser light L is located is made as small as possible, to enhance the energy density of the laser light L at that position, which makes it possible to form a modified region 7 with a high function as a starting point for cutting. In addition, because the reflection type spatial light modulator 203 is used, it is possible to improve the utilization efficiency of the laser light L as compared with a transmissive type spatial light modulator. Such improvement of the utilization efficiency of the laser light L is particularly important in the case in which the modified region 7 serving as a starting point for cutting is formed in the plate-shaped object 1.
Abstract:
An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode, a reflector electrode, and a dummy electrode. The IDT electrode includes electrode fingers extending in a predetermined direction. The reflector electrode faces the IDT electrode across a gap. The dummy electrode is situated on a straight line extending in the predetermined direction through the gap. At least one of the distance between the dummy electrode and the IDT electrode and the distance between the dummy electrode and the reflector electrode is larger than the distance between the IDT electrode and the reflector electrode. This acoustic wave device prevents a short circuit between the IDT electrode and the reflector electrode, thereby avoiding a decrease in its yield.
Abstract:
An observation device 1 comprises a light source unit 10, a biaxial scanning system 20, a wavefront modulation unit 30, an optical branching unit 40, a light detection unit 50, a wavefront detection unit 60, a control unit 70, and the like. The wavefront modulation unit 30 presents a compensating phase pattern for compensating for an aberration of input light and a branching phase pattern for splitting the input light into first and second beams. The wavefront detection unit 60 receives inputted light and detects a wavefront of the inputted light. The compensating phase pattern for compensating for the wavefront aberration is feedback-controlled in loop processing that includes the detection of a wavefront distortion of the light by the wavefront detection unit 60, the adjustment of the phase pattern by the control unit 70 according to the result of detection, and the presentation of the phase pattern by the wavefront modulation unit 30.