Semiconductor device
    111.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US08344422B2

    公开(公告)日:2013-01-01

    申请号:US12810096

    申请日:2008-12-25

    Abstract: A semiconductor device includes a lower barrier layer 12 composed of a layer of AlxGa1-xN (0≦x≦1) in a state of strain relaxation, and a channel layer 13, which is composed of a layer of InyGa1-yN (0≦y≦1) disposed on the lower barrier layer 12, has band gap that is smaller than band gap of the lower barrier layer 12, and exhibits compressive strain. A gate electrode 1G is formed over the channel layer 13 via an insulating film 15 and a source electrode 1S and a drain electrode 1D serving as ohmic electrodes are formed over the channel layer 13. The insulating film 15 is constituted of polycrystalline or amorphous member.

    Abstract translation: 半导体器件包括在应变松弛的状态下由Al x Ga 1-x N(0& nlE; x≦̸ 1)层构成的下阻挡层12,以及由In y Ga 1-y N(0< nlE; 1)层组成的沟道层13。 y); 1)设置在下阻挡层12上,具有小于下阻挡层12的带隙的带隙,并且表现出压缩应变。 在沟道层13上经由绝缘膜15形成栅极电极1G,在沟道层13上形成有用作欧姆电极的源电极1S和漏电极1D。绝缘膜15由多晶或非晶构成。

    CONTAINER-ENCLOSED FULLERENE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF STORING FULLERENE
    112.
    发明申请
    CONTAINER-ENCLOSED FULLERENE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF STORING FULLERENE 失效
    容器装满的FULLERENE,其制造方法和储存富勒烯的方法

    公开(公告)号:US20120308748A1

    公开(公告)日:2012-12-06

    申请号:US13575128

    申请日:2011-02-16

    CPC classification number: B82Y40/00 B82Y30/00 C01B32/152 Y10T428/13 Y10T428/30

    Abstract: A container-enclosed fullerene, a method of manufacturing the same, and a method of storing fullerene are provided, that make it possible to inhibit alteration of fullerene, especially that make it possible to prevent degradation of the solubility to solvent. A container-enclosed fullerene includes fullerene hermetically enclosed in a container with a high degree of vacuum. The internal pressure of the container is preferably 10 Pa or lower. The fullerene is preferably a metal encapsulated fullerene. The container-enclosed fullerene is manufactured by filling fullerene in a container, evacuating the container, and thereafter sealing the container.

    Abstract translation: 提供容器封闭的富勒烯,其制造方法和存储富勒烯的方法,其可以抑制富勒烯的改变,特别是可以防止溶剂对溶剂的降解。 容器封闭的富勒烯包括气密地封闭在具有高真空度的容器中的富勒烯。 容器的内部压力优选为10Pa以下。 富勒烯优选为金属封装的富勒烯。 容器封闭的富勒烯通过在容器中填充富勒烯,抽空容器,然后密封容器来制造。

    Laser machining device with a converged laser beam and laser machining method
    113.
    发明授权
    Laser machining device with a converged laser beam and laser machining method 有权
    激光加工装置采用融合激光束和激光加工方法

    公开(公告)号:US08324529B2

    公开(公告)日:2012-12-04

    申请号:US12742491

    申请日:2008-08-26

    Abstract: A laser machining device 1 includes a laser light source 10, a spatial light modulator 20, a controller 22, a converging optical system 30, and a shielding member 40. The phase-modulating spatial light modulator 20 inputs a laser beam outputted from the laser light source 10, displays a hologram modulating a phase of the laser beam at each of a plurality of pixels arranged two-dimensionally, and outputs the phase-modulated laser beam. The controller 22 causes the spatial light modulator 20 to display a plurality of holograms sequentially, lets the converging optical system 30 converge the laser beam outputted from the spatial light modulator 20 at converging positions having a fixed number of M, selectively places N converging positions out of the M converging positions into a machining region 91, and machines an object to be machined 90.

    Abstract translation: 激光加工装置1包括激光源10,空间光调制器20,控制器22,会聚光学系统30和屏蔽构件40.相位调制用空间光调制器20输入从激光器输出的激光束 光源10显示调制在二维排列的多个像素中的每一个处的激光束的相位的全息图,并输出相位调制的激光束。 控制器22使空间光调制器20依次显示多个全息图,使会聚光学系统30将从空间光调制器20输出的激光束会聚在具有固定数量的M的会聚位置,选择性地将N个收敛位置放出 的M个会聚位置进入加工区域91,并且对要加工的物体进行加工90。

    OCCUPANT DETECTION SENSOR AND MANUFACTURING METHOD OF THE SAME
    114.
    发明申请
    OCCUPANT DETECTION SENSOR AND MANUFACTURING METHOD OF THE SAME 审中-公开
    相关检测传感器及其制造方法

    公开(公告)号:US20120299605A1

    公开(公告)日:2012-11-29

    申请号:US13477466

    申请日:2012-05-22

    CPC classification number: H03K17/955 H03K17/962 H03K2017/9755 Y10T29/49117

    Abstract: An occupant detection sensor for detecting an occupant seating state on a seat comprises: a contact pressure sensor section including a pair of opposed electrodes arranged parallel to a seating face part of the seat; an electrostatic sensor section including a main electrode arranged parallel to the seating face part of the seat and a guard electrode arranged between the main electrode and a seat frame, the guard electrode and the main electrode having a same electric potential; a capacitance measuring section for measuring a first capacitance between the opposed electrodes and a second capacitance between the main electrode and ground; and an occupant distinguishing section for distinguishing a seating state of the occupant based on the first capacitance and the second capacitance.

    Abstract translation: 用于检测座椅上的乘员座位状态的乘员检测传感器包括:接触压力传感器部分,其包括平行于所述座椅的座面部分布置的一对相对的电极; 静电传感器部分,其包括平行于所述座的所述座面部分布置的主电极和布置在所述主电极和座椅框架之间的保护电极,所述保护电极和所述主电极具有相同的电位; 电容测量部,用于测量相对电极之间的第一电容和主电极与地之间的第二电容; 以及乘员区分部,其基于第一电容和第二电容来区分乘员的乘坐状态。

    SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, AND ELECTRONIC DEVICE
    115.
    发明申请
    SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, AND ELECTRONIC DEVICE 有权
    半导体器件,场效应晶体管和电子器件

    公开(公告)号:US20120228674A1

    公开(公告)日:2012-09-13

    申请号:US13497557

    申请日:2010-06-16

    Abstract: Provided is a semiconductor device capable of suppressing an occurrence of a punch-through phenomenon.A semiconductor device includes a substrate 1, a first n-type semiconductor layer 2, a p-type semiconductor layer 3, a second n-type semiconductor layer 4, a drain electrode 13, a source electrode 11, a gate electrode 12, and a gate insulation film 21, wherein the first n-type semiconductor layer 2, the p-type semiconductor layer 3, and the second n-type semiconductor layer 4 are laminated on the substrate 1 in this order. The drain electrode 13 is in ohmic-contact with the first n-type semiconductor layer 2. The source electrode 11 is in ohmic-contact with the second n-type semiconductor layer 4. An opening portion to be filled or a notched portion that extends from an upper surface of the second n-type semiconductor layer 4 to an upper part of the first n-type semiconductor layer 2 is formed at a part of the p-type semiconductor layer 3 and a part of the second n-type semiconductor layer 4. The gate electrode 12 is in contact with an upper surface of the first n-type semiconductor layer 2, side surfaces of the p-type semiconductor layer 3, and side surfaces of the second n-type semiconductor layer 4 at inner surfaces of the opening portion to be filled or a surface of the notched portion via the gate insulation film 21. The p-type semiconductor layer 3 has a positive polarization charge at a first n-type semiconductor layer 2 side in a state where a voltage is applied to none of the electrodes.

    Abstract translation: 提供能够抑制穿通现象发生的半导体装置。 半导体器件包括衬底1,第一n型半导体层2,p型半导体层3,第二n型半导体层4,漏极13,源电极11,栅电极12和 栅极绝缘膜21,其中第一n型半导体层2,p型半导体层3和第二n型半导体层4依次层压在基板1上。 漏电极13与第一n型半导体层2欧姆接触。源电极11与第二n型半导体层4欧姆接触。要填充的开口部分或延伸的缺口部分 从第二n型半导体层4的上表面到第一n型半导体层2的上部形成在p型半导体层3的一部分上,第二n型半导体层的一部分 栅电极12与第一n型半导体层2的上表面,p型半导体层3的侧表面和第二n型半导体层4的内表面的侧表面接触 待填充的开口部分或经由栅极绝缘膜21的切口部分的表面。在施加电压的状态下,p型半导体层3在第一n型半导体层2侧具有正极化电荷 没有电极。

    RF circuit, circuit evaluation method, algorithm and recording medium
    116.
    发明授权
    RF circuit, circuit evaluation method, algorithm and recording medium 失效
    RF电路,电路评估方法,算法和记录介质

    公开(公告)号:US08245179B2

    公开(公告)日:2012-08-14

    申请号:US12312551

    申请日:2007-10-03

    Applicant: Takashi Inoue

    Inventor: Takashi Inoue

    CPC classification number: G06F17/5063 G06F17/5036

    Abstract: It is required to qualitatively design a circuitry device in which not only in a small-signal simulation but also in a large-signal simulation, loop oscillation and motorboating oscillation of an amplifier are precisely predicted to suppress oscillation without severing a loop or without inserting a circulator. To remove insertion loss due to a probe resistor Rx, a negative resistor −Rx/2 is arranged at both ends thereof. To prevent consumption of a DC bias in the probe, a DC block is applied. Further, to remove thermal noise caused by an actual resistor to reduce influence on a noise factor NF, the noise temperature (environmental temperature) of the actual resistor is set to zero Kelvin.

    Abstract translation: 需要定性设计一种电路设备,其中不仅在小信号模拟中,而且在精确地预测放大器的大信号模拟,环路振荡和摩擦振荡,以抑制振荡而不中断环路或不插入 循环器 为了消除由于探针电阻器Rx引起的插入损耗,在其两端布置有负电阻-Rx / 2。 为了防止在探头中消耗直流偏压,应用直流电源。 此外,为了消除由实际电阻器引起的热噪声以减小对噪声因子NF的影响,实际电阻器的噪声温度(环境温度)设定为零开尔文。

    Liquid-sample wiping mechanism and wipe-material holding mechanism for optical measurement apparatus
    117.
    发明授权
    Liquid-sample wiping mechanism and wipe-material holding mechanism for optical measurement apparatus 有权
    液体样品擦拭机构和光学测量装置的擦拭材料保持机构

    公开(公告)号:US08151396B2

    公开(公告)日:2012-04-10

    申请号:US12178239

    申请日:2008-07-23

    CPC classification number: G01N21/15 B08B1/00 G01N2021/035

    Abstract: After a liquid sample between a sample-holding platform 11 and a window plate 22 is measured, a window plate holder 23 is raised, and a head 14 is moved from a standby position into the gap between the window plate 22 and the sample-holding platform 11. Then, the window plate holder 23 is lowered so as to press the window plate 22 onto the head 14 until the head 14 touches the sample-holding platform 11 below. Then the head 14 is swung back to the original position, whereby a wipe material 40 fitted on the head 14 simultaneously wipes off the liquid sample from both the lower surface of the window plate 22 and the upper surface of the sample-holding platform 11. Pressing the arch springs 35 enables the wipe material 40 to be easily attached to or detached from the head 14.

    Abstract translation: 在测量样品保持平台11和窗板22之间的液体样品之后,窗板保持器23升高,并且头部14从待机位置移动到窗板22和样品保持之间的间隙 平台11.然后,将窗板保持件23降下以将窗板22按压到头部14上,直到头部14接触下面的样品保持平台11。 然后将头部14摆回原来的位置,由此安装在头部14上的擦拭材料40同时从窗板22的下表面和样品保持平台11的上表面擦除液体样品。 按压弓形弹簧35使得擦拭材料40能够容易地附接到头部14或从头部14拆下。

    Laser working method, laser working apparatus, and its manufacturing method
    118.
    发明授权
    Laser working method, laser working apparatus, and its manufacturing method 有权
    激光加工方法,激光加工装置及其制造方法

    公开(公告)号:US08134099B2

    公开(公告)日:2012-03-13

    申请号:US12671820

    申请日:2008-07-28

    Abstract: An object to be processed 1 is irradiated with a laser light L modulated by a reflection type spatial light modulator 203 such that aberration of the laser light L converged inside the object 1 becomes a predetermined aberration or less. Therefore, aberration of the laser light L generated at a position on which a converging point P of the laser light L is located is made as small as possible, to enhance the energy density of the laser light L at that position, which makes it possible to form a modified region 7 with a high function as a starting point for cutting. In addition, because the reflection type spatial light modulator 203 is used, it is possible to improve the utilization efficiency of the laser light L as compared with a transmissive type spatial light modulator. Such improvement of the utilization efficiency of the laser light L is particularly important in the case in which the modified region 7 serving as a starting point for cutting is formed in the plate-shaped object 1.

    Abstract translation: 用由反射型空间光调制器203调制的激光L照射待处理物体1,使得会聚在物体1内的激光L的像差成为预定像差或更小。 因此,在激光L的会聚点P所在的位置处产生的激光L的像差尽可能地小,以增强该位置处的激光L的能量密度,这使得它成为可能 形成作为切割起点的高功能的改质区域7。 此外,由于使用反射型空间光调制器203,与透射型空间光调制器相比,可以提高激光L的利用效率。 这样的激光L的利用效率的提高对于在板状物体1中形成作为切割起点的改质区域7的情况是特别重要的。

    ACOUSTIC WAVE DEVICE
    119.
    发明申请
    ACOUSTIC WAVE DEVICE 有权
    声波设备

    公开(公告)号:US20120049690A1

    公开(公告)日:2012-03-01

    申请号:US13206660

    申请日:2011-08-10

    CPC classification number: H03H9/02637 H03H9/02921 H03H9/14538

    Abstract: An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode, a reflector electrode, and a dummy electrode. The IDT electrode includes electrode fingers extending in a predetermined direction. The reflector electrode faces the IDT electrode across a gap. The dummy electrode is situated on a straight line extending in the predetermined direction through the gap. At least one of the distance between the dummy electrode and the IDT electrode and the distance between the dummy electrode and the reflector electrode is larger than the distance between the IDT electrode and the reflector electrode. This acoustic wave device prevents a short circuit between the IDT electrode and the reflector electrode, thereby avoiding a decrease in its yield.

    Abstract translation: 声波装置包括压电基板,叉指式换能器(IDT)电极,反射器电极和虚拟电极。 IDT电极包括沿预定方向延伸的电极指。 反射器电极跨越间隙面对IDT电极。 虚拟电极位于沿预定方向延伸穿过间隙的直线上。 虚拟电极和IDT电极之间的距离和虚拟电极与反射器电极之间的距离中的至少一个大于IDT电极和反射器电极之间的距离。 该声波器件防止IDT电极和反射器电极之间的短路,从而避免其产量的降低。

    Observation device
    120.
    发明授权
    Observation device 有权
    观察装置

    公开(公告)号:US08120765B2

    公开(公告)日:2012-02-21

    申请号:US12866771

    申请日:2009-01-13

    Abstract: An observation device 1 comprises a light source unit 10, a biaxial scanning system 20, a wavefront modulation unit 30, an optical branching unit 40, a light detection unit 50, a wavefront detection unit 60, a control unit 70, and the like. The wavefront modulation unit 30 presents a compensating phase pattern for compensating for an aberration of input light and a branching phase pattern for splitting the input light into first and second beams. The wavefront detection unit 60 receives inputted light and detects a wavefront of the inputted light. The compensating phase pattern for compensating for the wavefront aberration is feedback-controlled in loop processing that includes the detection of a wavefront distortion of the light by the wavefront detection unit 60, the adjustment of the phase pattern by the control unit 70 according to the result of detection, and the presentation of the phase pattern by the wavefront modulation unit 30.

    Abstract translation: 观察装置1包括光源单元10,双轴扫描系统20,波前调制单元30,光分路单元40,光检测单元50,波前检测单元60,控制单元70等。 波前调制单元30呈现用于补偿输入光的像差的补偿相位图案和用于将输入光分成第一和第二光束的分支相位图案。 波前检测单元60接收输入的光并检测输入的光的波前。 用于补偿波前像差的补偿相位图案在循环处理中进行反馈控制,该循环处理包括由波前检测单元60检测光的波前失真,根据结果调整控制单元70的相位图案 并且由波前调制单元30呈现相位图案。

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