Abstract:
An automotive lamp includes an LED as a light source, a heatsink for radiating heat produced by the LED, the heatsink including a plurality of plate fins installed upright on base parts and a plurality of ventilation passages formed between the plate fins, a centrifugal fan for performing the forced air cooling of the plate fins by sending air through the ventilation passages of the heatsink, the centrifugal fan having air inlets in an axial direction for drawing air in, a left-side air outlet and a right-side air outlet for discharging air in left-right directions perpendicular to the axial direction, and a lamp housing for housing the LED, heatsink and centrifugal fan. The plate fins of the heatsink are formed such that the entrance of at least one of a plurality of ventilation passages faces the left-side air outlet and the right-side outlet of the centrifugal fan.
Abstract:
A heterojunction filed effect transistor with a low access resistance, a low on resistance, and the like, a method for producing a heterojunction filed effect transistor and an electron device are provided. In the heterojunction field effect transistor, an electron transit layer 11 formed of a III-nitride semiconductor is formed on a substrate 10, an electron supply layer 12 formed of a III-nitride semiconductor forms a heterojunction with an upper surface of the electron transit layer 11, a gate electrode 14, a source electrode 15A, and a drain electrode 15B are arranged on the electron supply layer 12, n-type conductive layer regions 13A and 13B each extended from an upper part of the electron transit layer 11 to an upper surface of the electron supply layer 12 are provided in at least a part below the source electrode 15A and a part below the drain electrode 15B, and an n-type impurity concentration at a heterojunction interface of an electron transit layer 11 part of each of the n-type conductive layer regions 13A and 13B with the electron supply layer 12 is 1×1020 cm−3 or more.
Abstract:
A vehicle lamp is provided. The vehicle lamp includes semiconductor light emitting device, a heatsink configured to dissipate a heat generated by the semiconductor light emitting device, a fan which moves air, a guide portion configured to diffuse the air from the fan and to guide the air toward the heatsink, and a housing in which the semiconductor light emitting device, the heatsink, the fan and the guide portion are accommodated. The heatsink includes a base and a plurality of heat dissipating members arranged to protrude from the base.
Abstract:
Provided is a semiconductor device that can reduce the contact resistance, has a small current collapse, and can improve the pinch-off characteristic upon a high-frequency operation. A field effect transistor using a wurtzite (having (0001) as the main plane) type III-nitride semiconductor includes: a substrate (101); an undercoat layer (103) of a first III-nitride semiconductor; and a carrier travel layer (104) of a second III-nitride semiconductor. The undercoat layer (103) (101) and the carrier travel layer (104) is formed on the substrate in this order. The field effect transistor includes source/drain electrodes (105, 106) in ohmic contact, and a gate electrode (107) in Schottky contact directly or via another layer on the carrier travel layer (104). The undercoat layer (103) has an average lattice constant greater than that of the carrier travel layer (104) and a band gap greater than that of the carrier travel layer (104).
Abstract:
This optical mask is an optical mask which applies spatial intensity modulation to input light in a beam cross-section and outputs a light after being subjected to the modulation, and when regions A0 to Ap defined by circumferences with p radiuses r1 to rp (p is an even number, rp>rp−1> . . . >r2>r1, and rp−rp−1>rp−1−rp−2> . . . >r3−r2>r2−r1>r1) around a predetermined position are set in order from an inner side, a region Am (m is an even number not less than 0 and not more than p) is a light transmission region, and a region An (n is an odd number not less than 0 and not more than p) is a light shielding region.
Abstract:
A cell culture substrate which is durable and which can be readily produced in commercial scale at a low cost, and its production method are provided. The cell culture substrate comprises a substrate and a layer formed by surface modification, which comprises a polymer containing amino group produced by reacting a polymer represented by the following formula (II): (wherein n is 0 or a positive integer, and m is a positive integer, the n and m representing degree of polymerization) formed by chemical vapor deposition of formyl[2.2]paracyclophane represented by the following formula (I): (wherein k is 0 or 1) with a polymer having at least one amino group (—NH2) capable of forming Schiff base in its monomer. The production method of the cell culture substrate comprises the step of synthesizing such polymer on the substrate.
Abstract:
A laser light source 1 is provided with an output mirror 11, a laser medium 12, a light beam diameter adjuster 13, an aperture 14, a reflection mirror 15, a drive unit 21, and a control unit 22, and outputs laser oscillation light 31 from the output mirror 11 to the outside. The laser resonator is configured so that the reflection mirror 15 and the output mirror 11 are disposed so as to be opposed to each other with the laser medium 12 placed therebetween. The reflection mirror 15 is configured such that it gives amplitude or phase variations to respective positions in the section of a light beam when the light is reflected, and the reflection mirror presents a amplitude or phase variation distribution in accordance with control from the outside, and determines the transverse mode of the laser oscillation light 31 based on the amplitude or phase variation distribution. Thus, a laser light source capable of easily controlling the transverse mode of the laser oscillation light can be realized.
Abstract:
Disclosed is an adhesive composition, comprising, as essential components, a thermosetting resin component A and a high-molecular component B which are evenly compatible and miscible with each other at a temperature of 5 to 40° C. without being separated from each other, and a curing agent component C,wherein after the adhesive composition comes into contact with an adherend and after the thermosetting resin component A is cured, the thermosetting resin component A is separated, in the adhesive composition, into particulate structures wherein the concentration of the thermosetting resin component A is larger than that in the surrounding of the particulate structures, and further the particulate structures are formed in a larger amount near a surface of the composition which contacts the adherend than inside the adhesive composition. The adhesive composition can be used in thin-film bonding. it is possible to provide an adhesive composition excellent in heat resistance, crack resistance, adhesive property, and exudation resistance, which is property that the adhesive less exudes.
Abstract:
The present invention provides a semiconductor device capable of suppressing current collapse, and also of preventing dielectric breakdown voltage and gain from lowering so as to perform high-voltage operation and realize an ideal high output. On a substrate (101), there are formed a buffer layer (102) made of a first GaN-based semiconductor, a carrier traveling layer (103) made of a second GaN-based semiconductor and a carrier supplying layer (104) made of a third GaN-based semiconductor. A recess structure (108) is made by eliminating a part of a first insulation film (107) and a part of the carrier supplying layer (104). Next, a gate insulation film (109) is deposited, and then a gate electrode (110) is formed so as to fill up the recess portion (108) and cover on over an area where the first insulation film (107) remains so that its portion on the drain electrode side is longer than that on the source electrode side. Such a recess structure is employed so as to provide the high-output semiconductor device capable of performing the high-voltage operation.
Abstract:
An object of this invention is to decrease the amount of ink mist while keeping the image quality high in inkjet printing. To achieve this object, printing is performed by time-divisionally driving, for each block, a plurality of nozzles for discharging ink. In preliminary discharge, the nozzles are so driven as to set the driving time interval between neighboring nozzles to the first time interval. In printing, the nozzles are so driven as to set the driving time interval between neighboring nozzles to the second time interval longer than the first time interval.