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公开(公告)号：US10908192B2
公开(公告)日：2021-02-02
申请号：US16570527
申请日：2019-09-13
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Bruno Gailhard
IPC: G01R19/165 , G06F1/28
Abstract: A method includes selecting at least one first voltage that defines subsets of DC voltages from among an ordered set of DC voltages, comparing the first voltage with a DC reference voltage, selecting one of the subsets based on a result of the comparing, and comparing each voltage of the selected subset with the reference voltage.
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公开(公告)号：US10903209B2
公开(公告)日：2021-01-26
申请号：US16053304
申请日：2018-08-02
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Francois Tailliet
IPC: H01L21/762 , H01L21/8234 , H01L29/10 , H01L27/088 , H01L29/06 , H01L29/78
Abstract: An electronic chip is provided that includes a plurality of first transistors electrically coupled to one another in parallel. A plurality of first isolating trenches is included in the electronic chip, and the first transistors are separated from one another by the first isolating trenches. Each of the first isolation trenches has a depth and a maximum width, and the depth depends on, or is a function of, the maximum width.
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公开(公告)号：US10895856B2
公开(公告)日：2021-01-19
申请号：US16155355
申请日：2018-10-09
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Pascal Fornara
Abstract: A system, supplied by a power supply, is switched into standby mode by an electronic device that includes a charging input coupled to a charge voltage obtained from the voltage delivered by the power supply. A first input is coupled to the power supply and a power supply output is coupled to the system. A storage capacitive element is coupled to the charging input and configured to be charged by the charge voltage. A switching circuit, coupled between the first input and the power supply output, disconnects the power supply output from the first input when the voltage across the terminals of the storage capacitive element is higher than a threshold. A discharge circuit discharges the storage capacitive element so that the capacitor voltage becomes lower than the threshold. The switching circuit further re-connects the first input to the power supply output at the end of the discharge period.
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公开(公告)号：US20210012208A1
公开(公告)日：2021-01-14
申请号：US16917414
申请日：2020-06-30
Inventor： Laurent Folliot , Pierre Demaj , Emanuele Plebani
Abstract: A method can be performed prior to implementation of a neural network by a processing unit. The neural network comprising a succession of layers and at least one operator applied between at least one pair of successive layers. A computational tool generates an executable code intended to be executed by the processing unit in order to implement the neural network. The computational tool generates at least one transfer function between the at least one pair of layers taking the form of a set of pre-computed values.
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公开(公告)号：US10886283B2
公开(公告)日：2021-01-05
申请号：US16525780
申请日：2019-07-30
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Abderrezak Marzaki , Pascal Fornara
IPC: H01L27/11 , H01L27/112 , H01L23/00 , G11C17/18 , G11C17/16 , H01L23/525
Abstract: An integrated circuit includes at least one antifuse element. The antifuse element is formed from a semiconductor substrate, a trench extending down from a first face of the semiconductor substrate into the semiconductor substrate, a first conductive layer housed in the trench and extending down from the first face of the semiconductor substrate into the semiconductor substrate, a dielectric layer on the first face of the semiconductor substrate, and a second conductive layer on the dielectric layer. A program transistor selectively electrically couples the second conductive layer to a program voltage in response to a program signal. A program/read transistor selectively electrically couples the first conductive layer to a ground voltage in response to the program signal and in response to a read signal. A read transistor selectively electrically couples the second conductive layer to a read amplifier in response to the read signal.
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Patent Agency Ranking
公开(公告)号：US10861802B2
公开(公告)日：2020-12-08
申请号：US16208253
申请日：2018-12-03
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Christian Rivero , Pascal Fornara , Guilhem Bouton , Mathieu Lisart
IPC: H01L21/311 , H01L23/00 , H01L23/58 , H01L21/8234 , H01L23/528 , H01L27/088 , H01L23/522 , H01L21/768
Abstract: An integrated circuit includes a semiconductor substrate and a multitude of electrically conductive pads situated between component zones of the semiconductor substrate and a first metallization level of the integrated circuit, respectively. The multitude of electrically conductive pads are encapsulated in an insulating region and include: first pads, in electrical contact with corresponding first component zones, and at least one second pad, not in electrical contact with a corresponding second component zone.
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公开(公告)号：US10826566B2
公开(公告)日：2020-11-03
申请号：US16286345
申请日：2019-02-26
Inventor： Gwenael Maillet , Jean-Louis Labyre , Gilles Bas
Abstract: A system includes a near-field communication device configured to transmit a radio frequency control signal in a near-field regime and an interface. The interface includes a near-field communication circuit configured to receive the RF control signal. The interface further includes a pulse width modulation signal generation circuit configured to generate a pulse width modulation signal according to the radio frequency control signal. The system further includes an electrically-controllable equipment configured to be controlled by the pulse width modulation signal.
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公开(公告)号：US10812058B2
公开(公告)日：2020-10-20
申请号：US16518474
申请日：2019-07-22
Inventor： Vincent Binet , David Chesneau
IPC: H03K3/013 , H03K5/24 , H03K5/1252 , H03K3/0233 , H03F3/19 , H03K19/20 , H03K5/00
Abstract: A method for controlling operation of a comparator that includes an amplifier that is connected at an input of the comparator includes neutralizing any change of state of a signal output by the comparator starting from each moment in time at which the change of state of the output signal occurs and lasting for a duration of propagation to compensate for a duration of propagation of signals within the amplifier.
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公开(公告)号：US10796763B2
公开(公告)日：2020-10-06
申请号：US16256525
申请日：2019-01-24
Inventor： Francesco La Rosa , Marc Mantelli , Stephan Niel , Arnaud Regnier
Abstract: A split-gate memory cell includes a state transistor possessing a control gate and a floating gate and a selection transistor possessing a selection gate. The split-gate memory cell is programmed by applying, during a programming duration, a first voltage to the control gate, a second voltage to a drain of the state transistor and a third voltage to the selection gate of the selection transistor. The third voltage is transitioned during the programming duration between a first value and a second value greater than the first value.
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公开(公告)号：US10770357B2
公开(公告)日：2020-09-08
申请号：US16429836
申请日：2019-06-03
Inventor： Benoit Froment , Stephan Niel , Arnaud Regnier , Abderrezak Marzaki
IPC: H01L21/8234 , H01L21/762 , H01L21/74 , H01L27/08 , H01L49/02 , H01C7/12 , H01L21/765 , H01L29/8605 , H01L29/06 , H01L23/522
Abstract: An integrated circuit includes a semiconductor substrate with an electrically isolated semiconductor well. An upper trench isolation extends from a front face of the semiconductor well to a depth located a distance from the bottom of the well. Two additional isolating zones are electrically insulated from the semiconductor well and extending inside the semiconductor well in a first direction and vertically from the front face to the bottom of the semiconductor well. At least one hemmed resistive region is bounded by the two additional isolating zones, the upper trench isolation and the bottom of the semiconductor well. Electrical contacts are electrically coupled to the hemmed resistive region.
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