Abstract:
A system for obtaining ellipsometric data from a sample. The system includes a source for providing a monochromatic light beam. The system also includes a nonlinear crystal for converting the monochromatic light beam into photon pairs by disintegrating photons from the monochromatic light beam, such that each of the photon pairs exhibits entanglement properties, wherein one of the photons of the pair is directed to the sample and the other of the photons of the pair is not directed to the sample. The system further includes a circuit for calculating the coincidence of one of the photons of the photon pair reflected from the sample and the other of the photons of the photon pair, wherein the measurements of the sample are obtained by analyzing the coincidence and the entanglement properties between one of the photons of the photon pair reflected from the sample and the other of the photons of the photon pair.
Abstract:
It is disclosed a device and a method for the on-line determination of the concentration of oil in a water solution by the angle of rotation of plane polarized light.
Abstract:
A method and an apparatus for measuring the density variations, static and dynamic, in substances that are at least partially transparent to electromagnetic waves is disclosed. A special birefringement crystal phase shifting assembly encodes the angle of incidence resulting from the refractive effects of the electromagnetic waves having passed through a density variation. The angle of incidence is encoded as a poralization phase shift. Specifically, the poralization phase shift is between the ordinary and the extraordinary rays. That poralization phase shift has a known and definable relationship to the gas density experienced by the electromagnetic wave during its path.
Abstract:
This invention relates to ellipsometry and reflectometry optical metrology tools that are used to evaluate semiconductor wafers and is directed to reducing errors associated with material surrounding a desired measurement area or pad, either by minimizing the uncertainties in positioning the measurement beam or by taking into account the effects of the surrounding material in analyzing the measured data. One aspect the present invention utilizes a technique where initially one purposefully aims to place the optical spot of the measurement beam a few microns away from the center of the target pad. Then a series of measurements are made with each measurement separated by a small stage jog as the optical spot is scanned over the measurement pad. Provided the surrounding material is the same on both sides of the pad, one finds that the data invariably has either a cup or inverted nullUnull shape or an inverted cup or nullUnull shape when viewed as a function of position. The minimum or maximum of the curve is then used to identify the center of the pad. Another aspect the present invention makes use of a novel method of data analysis that allows for the correction of the effects of the surrounding material in analyzing the data. In essence, the data collected at the center of the pad is treated as being created by a superposition of light coming from the pad material itself and light coming from the surrounding material. The influence of the two materials is weighted by the proportion of the light that reflects off the pad as compared with the light that reflects off of the surrounding material. Given knowledge of both the dimensions of the pad and the size and profile of the beam spot, the resulting signal may be mathematically modeled according to the present invention to account for both the contribution of the light reflected from the pad and the light reflected from the surrounding material.
Abstract:
A system is disclosed for evaluating nitrogen levels in thin gate dielectric layers formed on semiconductor samples. In one embodiment, a tool is disclosed which includes both a narrow band ellipsometer and a broadband spectrometer for measuring the sample. The narrowband ellipsometer provides very accurate information about the thickness of the thin film layer while the broadband spectrometer contains information about the nitrogen levels. In another aspect of the subject invention, a thermal and/or plasma wave detection system is used to provide information about the nitrogen levels and nitration processes.
Abstract:
An ellipsometer or reflectometer includes a light source creating a mono or polychromatic probe beam. The probe beam is focused by one or more lenses to create an illumination spot on the surface of the subject under test. A second lens (or lenses) images the illumination spot (or a portion of the illumination spot) to a detector. The detector captures (or otherwise processes) the received image. A processor analyzes the data collected by the detector. An aperture is positioned along the beam bath between the light source and the detector. The aperture has an elliptical shape to give the image received by the detector a circular shape. The circular shape maximizes the amount of energy that may be received using a square test area.
Abstract:
The system includes a first polarizing element; an electro-optically driven birefringent element; a second polarizing element; an optical assembly; and, an optical-to-electronic imaging sensor assembly. The first polarizing element receives an incoming optical wavefront and provides a linearly polarized output therefrom. The electro-optically driven birefringent element receives the linearly polarized output and produces two polarization eigenwaves, an output of the birefringent element being elliptically polarized. The second polarizing element has a polarization axis perpendicular to a polarization axis of the first polarizing element. The second polarizing element receives the output from the birefringent element and provides a linearly polarized output. The optical assembly receives the output of the second polarizing element and forms a real image therefrom. The optical-to-electronic imaging sensor assembly receives the real image and provides an electronic representation thereof, which may be used for real-time reconstruction of the incoming wavefront.
Abstract:
A process for forming a thin film is described that enables automatic formation of thin films having constant optical properties reliably and in large quantities with excellent reproducibility suitable for mass production. An apparatus for performing the process is also described. Generally, a material for vapor deposition is vaporized by an electron gun and an antireflection film forms by vapor deposition on lenses held by a coat dome. The electric power applied to the electron gun is controlled so that the amount of transmitted or reflected light continuously measured by an optical film thickness meter during thin film formation is compared to a reference amount of measured light stored in a means for storing data until the measured and reference amounts of measured light are close to, or the same as, one another.
Abstract:
An ellipsometer capable of generating a small beam spot is disclosed. The ellipsometer includes a light source for generating a narrow bandwidth probe beam. An analyzer is provided for determining the change in polarization state of the probe beam after interaction with the sample. A lens is provided having a numerical aperture and focal length sufficient to focus the beam to a diameter of less than 20 microns on the sample surface. The lens is formed from a graded index glass wherein the index of refraction varies along its optical axis. The lens is held in a relatively stress free mount to reduce stress birefringence created in the lens due to changes in ambient temperature. The ellipsometer is capable of measuring features on semiconductors having a dimensions as small as 50null50 microns.
Abstract:
Techniques and devices for depolaring polarized light by using one or more birefringent optical elements in the optical path of light to scramble the state of polarization of light. Examples of devices for coupling with a fiber or a fiber device, and their applications in various fiber environments are also described.