公开(公告)号：US07800131B2

公开(公告)日：2010-09-21

申请号：US11921857

申请日：2006-06-12

Applicant: Hironobu Miyamoto ,  Yuji Ando ,  Yasuhiro Okamoto ,  Tatsuo Nakayama ,  Takashi Inoue ,  Kazuki Ota ,  Akio Wakejima ,  Kensuke Kasahara ,  Yasuhiro Murase ,  Kohji Matsunaga ,  Katsumi Yamanoguchi ,  Hidenori Shimawaki

Inventor： Hironobu Miyamoto ,  Yuji Ando ,  Yasuhiro Okamoto ,  Tatsuo Nakayama ,  Takashi Inoue ,  Kazuki Ota ,  Akio Wakejima ,  Kensuke Kasahara ,  Yasuhiro Murase ,  Kohji Matsunaga ,  Katsumi Yamanoguchi ,  Hidenori Shimawaki

IPC: H01L29/812 ,  H01L21/338

CPC classification number: H01L29/404 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/802 ,  H01L29/812

Abstract: A field effect transistor includes a layer structure made of compound semiconductor (111) provided on a semiconductor substrate (110) made of GaAs or InP, as an operation layer, and employs a first field plate electrode (116) and a second field plate electrode (118). The second field plate electrode includes a shielding part (119) located in the region between the first field plate electrode and a drain electrode (114), and serves to shield the first field plate electrode from the drain electrode. When, in the cross sectional view in the gate length direction, the length in the gate length direction of an overlap region, in which the second field plate electrode overlaps the upper part of a structure composed of the first field plate electrode and a gate electrode (113), is designated as Lol, and the gate length is Lg, the relation expressed as 0≦Lol/Lg≦1 holds.

Abstract translation: 场效应晶体管包括由设置在由GaAs或InP制成的半导体衬底（110）上的化合物半导体（111）作为操作层的层结构，并且采用第一场极板电极（116）和第二场极板电极 （118）。 第二场板电极包括位于第一场极板电极和漏电极（114）之间的区域中的屏蔽部分（119），用于屏蔽第一场极板电极与漏极电极。 当在栅极长度方向的截面图中，重叠区域的栅极长度方向上的长度，其中第二场极板电极与由第一场极板电极和栅电极构成的结构的上部重叠 （113）表示为Lol，栅极长度为Lg，表示为0＆nlE; Lol / Lg＆nlE; 1的关系成立。

公开(公告)号：US20100219718A1

公开(公告)日：2010-09-02

申请号：US12680774

申请日：2008-10-21

Applicant: Kazunori Nishimura ,  Hiroyuki Nakamura ,  Hidekazu Nakanishi ,  Ryouichi Takayama ,  Takashi Inoue

Inventor： Kazunori Nishimura ,  Hiroyuki Nakamura ,  Hidekazu Nakanishi ,  Ryouichi Takayama ,  Takashi Inoue

IPC: H01L41/09 ,  H01L41/04

CPC classification number: H03H9/0222 ,  H03H9/02574

Abstract: A boundary acoustic wave device includes a first medium layer made of piezoelectric material, a second medium layer provided on the first medium layer, a third medium layer provided on the second medium layer, and an electrode provided at an interface between the second and third medium layers. The electrode drives the third medium layer to generate a transverse wave. A propagation speed of the transverse wave in the third medium layer is lower than a propagation speed of the transverse wave in the first medium layer. A propagation speed of the transverse wave in the second medium layer is lower than the propagation speed of the transverse wave in the first medium layer. This boundary acoustic wave device has a large electro-mechanical coupling coefficient.

Abstract translation: 弹性边界波装置包括由压电材料制成的第一介质层，设置在第一介质层上的第二介质层，设置在第二介质层上的第三介质层，以及设置在第二介质和第三介质之间的界面处的电极 层。 电极驱动第三介质层产生横波。 第三介质层中的横波的传播速度低于第一介质层中的横波的传播速度。 第二介质层中的横波的传播速度低于第一介质层中的横波的传播速度。 该声界面波装置具有大的机电耦合系数。

公开(公告)号：US20100218287A1

公开(公告)日：2010-08-26

申请号：US12712745

申请日：2010-02-25

Applicant: Toshihiko NAKATA ,  Masahiro Watanabe ,  Takashi Inoue ,  Kishio Hidaka ,  Makoto Okai ,  Motoyuki Hirooka

Inventor： Toshihiko NAKATA ,  Masahiro Watanabe ,  Takashi Inoue ,  Kishio Hidaka ,  Makoto Okai ,  Motoyuki Hirooka

IPC: G01Q20/02 ,  G01Q60/18

CPC classification number: G01Q60/22 ,  G01Q70/12

Abstract: In a scanning probe microscope, a nanotube and metal nano-particles are combined together to configure a plasmon-enhanced near-field probe having an optical resolution on the order of nanometers as a measuring probe in which a metal structure is embedded, and this plasmon-enhanced near-field probe is installed in a highly-efficient plasmon exciting unit to repeat approaching to and retracting from each measuring point on a sample with a low contact force, so that optical information and profile information of the surface of the sample are measured with a resolution on the order of nanometers, a high S/N ratio, and high reproducibility without damaging both of the probe and the sample.

Abstract translation: 在扫描探针显微镜中，将纳米管和金属纳米粒子组合在一起构成具有纳米数量级的光学分辨率的等离子体增强型近场探针作为嵌入金属结构的测量探针，该等离子体激元 增强的近场探头安装在高效的等离子体激元单元中，以低接触力重复接近和缩回样品上的每个测量点，从而测量样品表面的光学信息和轮廓信息 分辨率为纳米级，高S / N比，高重现性，不损伤探头和样品。

公开(公告)号：US07767739B2

公开(公告)日：2010-08-03

申请号：US12087585

申请日：2007-01-09

Applicant: Yuji Tada ,  Takashi Inoue

Inventor： Yuji Tada ,  Takashi Inoue

IPC: C08K5/5399 ,  C07F9/547

CPC classification number: C09K21/12 ,  C07F9/65815 ,  C07F9/65817 ,  C07F9/65818 ,  C08G79/025 ,  C08K5/5399 ,  C08L71/126 ,  C09K21/14

Abstract: A phosphazene compound, which can effectively enhance flame retardancy without deteriorating mechanical properties of a resin molded product, and is also less likely to deteriorate thermal reliability and dielectric properties, is represented by the formula (1) shown below. n represents an integer of 3 to 15. wherein A represents a group selected from the group consisting of an alkoxy group, an aryloxy group and a group having a cyanato group, and at least one is a group having a cyanato group, and an example of A is a cyanatophenyl-substituted phenyloxy group represented by the formula (4) shown below, and Y in the formula (4) represents O, S, SO2, CH2, CHCH3, C(CH3)2, C(CF3)2, C(CH3)CH2CH3 or CO.

Abstract translation: 可以有效地提高阻燃性，而不会降低树脂成型体的机械性能，也不太可能劣化热可靠性和介电性能的磷腈化合物由下式（1）表示。 n表示3〜15的整数。其中A表示选自由烷氧基，芳氧基和具有氰基的基团组成的组中的基团，并且至少一个为具有氰基的基团， 的A是由下式（4）表示的氰基苯基取代的苯氧基，式（4）中的Y表示O，S，SO 2，CH 2，CHCH 3，C（CH 3）2，C（CF 3） C（CH 3）CH 2 CH 3或CO。

公开(公告)号：US07678996B2

公开(公告)日：2010-03-16

申请号：US12076957

申请日：2008-03-25

Applicant: Takashi Inoue ,  Kenichiro Fujimoto ,  Kentaro Segawa ,  Hitoshi Kimura ,  Tomiya Abe

Inventor： Takashi Inoue ,  Kenichiro Fujimoto ,  Kentaro Segawa ,  Hitoshi Kimura ,  Tomiya Abe

IPC: H01B7/00

CPC classification number: C08L53/025 ,  C08K5/34928 ,  C08L23/06 ,  C08L51/06 ,  C08L67/02 ,  C08L2203/202 ,  H01B3/421 ,  H01B3/441 ,  H01B3/442 ,  C08L2666/04 ,  C08L2666/02 ,  C08L2666/14

Abstract: A high heat-resistance resin composition, the high heat-resistance resin composition being thermally treated at 150° C. for 100 hours, wherein a heat absorption amount of the high heat-resistance resin composition which is measured at a melting point thereof by Differential Scanning Calorimetry (DSC) is equal to or less than 45 J/g before thermal treatment, an increasing rate of the heat absorption amount of the high heat-resistance resin composition which is measured at a melting point thereof after the thermal treatment by Differential Scanning Calorimetry (DSC) is equal to or less than 20% as compared to that before the thermal treatment, and a degree of extensibility thereof is equal to or more than 200% after the thermal treatment.

Abstract translation: 高耐热性树脂组合物在150℃下热处理100小时，其中通过差示测定其熔点的高耐热性树脂组合物的吸热量， 在热处理之前，扫描量热法（DSC）等于或小于45J / g，通过差示扫描在热处理后的熔点测量的高耐热树脂组合物的吸热量的增加率 与热处理相比，量热法（DSC）等于或小于20％，并且在热处理后其扩展程度等于或大于200％。

公开(公告)号：US20100009862A1

公开(公告)日：2010-01-14

申请号：US12023309

申请日：2008-01-31

Applicant: Miwako NAKAHARA ,  Takashi Inoue ,  Osamu Kogi

Inventor： Miwako NAKAHARA ,  Takashi Inoue ,  Osamu Kogi

IPC: C40B30/04 ,  C40B40/00 ,  C40B40/06 ,  C40B50/14 ,  C40B60/10

CPC classification number: G01N33/553 ,  G01N21/6428 ,  G01N21/6452 ,  G01N21/648 ,  G01N33/54313 ,  G01N33/582

Abstract: The present invention aims to improve detecting accuracy and reproducibility of a biomolecule sensor. The biomolecule sensor of the present invention includes single probe molecules orderly aligned and fixed on grid points on the surface of a substrate. Accordingly, in the biomolecule sensor of the present invention: probe molecules for detecting a biomolecule are orderly aligned and separately fixed; blocking for preventing non-specific adsorption is applied to a region other than the region of the probe molecules for detecting a biomolecule; and fluorescence enhancement is achieved by metal microparticles.

Abstract translation: 本发明旨在提高生物分子传感器的检测精度和再现性。 本发明的生物分子传感器包括单个探针分子，其顺序对准并固定在基底表面上的网格点上。 因此，在本发明的生物分子传感器中：用于检测生物分子的探针分子是有序排列和分离地固定的; 将用于防止非特异性吸附的阻断物施加到除了用于检测生物分子的探针分子区域以外的区域; 并通过金属微粒实现荧光增强。

公开(公告)号：US07647432B2

公开(公告)日：2010-01-12

申请号：US11417161

申请日：2006-05-04

Applicant: Yasuhiko Sasaki ,  Tomoaki Endoh ,  Mamoru Osada ,  Takayuki Matsuo ,  Takashi Inoue ,  Naoko Shimotai ,  Tomoko Takagi

Inventor： Yasuhiko Sasaki ,  Tomoaki Endoh ,  Mamoru Osada ,  Takayuki Matsuo ,  Takashi Inoue ,  Naoko Shimotai ,  Tomoko Takagi

IPC: G06F3/00 ,  G06F13/12 ,  G06F15/00 ,  G06F3/12 ,  G06K15/00

CPC classification number: H04N1/00204 ,  H04N1/00957 ,  H04N1/00973 ,  H04N1/32502 ,  H04N1/32512 ,  H04N2201/0039 ,  H04N2201/0094 ,  H04N2201/3212

Abstract: An object of the present invention is to provide a multi-function peripheral which is easy for a user to operate. To achieve the object, according to the present invention, there is provided a peripheral connected to an information processing apparatus, which inputs and analyzes a job script constituted of packet data from the information processing apparatus, and subsequently generates an appropriate job file in accordance with the content of the job script.

Abstract translation: 本发明的目的是提供一种用户操作容易的多功能外围设备。 为了实现该目的，根据本发明，提供了一种连接到信息处理设备的外围设备，其输入和分析来自信息处理设备的由分组数据构成的作业脚本，并且随后根据 作业脚本的内容。

公开(公告)号：US20090306300A1

公开(公告)日：2009-12-10

申请号：US12478151

申请日：2009-06-04

Applicant: Shinichi Taniguchi ,  Yukimune Takahashi ,  Takashi Inoue ,  Hiroaki Ishizawa

Inventor： Shinichi Taniguchi ,  Yukimune Takahashi ,  Takashi Inoue ,  Hiroaki Ishizawa

IPC: C08L23/08 ,  C08L25/02

CPC classification number: G01N21/0303 ,  B01L3/508 ,  B01L2300/161 ,  C08J7/123 ,  C08J2365/00 ,  G01N21/01 ,  G01N21/03 ,  G01N2021/115

Abstract: This invention provides a cell made of polymers for spectra measurement while inhibiting a decrease in a molecular weight of resin caused by discharge treatment and having a stable hydrophilic modified surface. The hydrophilic resin cell is prepared by providing a polymeric resin cell between the two opposing electrodes, applying an electric field to a region between the above opposing electrodes under a nitrogen atmosphere with a pressure close to the atmospheric pressure to generate an electric discharge, and exposing the cell subjected to discharge treatment with a gas including oxygen.

Abstract translation: 本发明提供一种聚合物制成的电池，用于光谱测量，同时抑制由放电处理引起的树脂分子量的降低并具有稳定的亲水改性表面。 通过在两个相对电极之间设置聚合物树脂电池，在氮气氛下，在接近于大气压的压力下向上述相对的电极之间的区域施加电场，从而产生放电，并且暴露出亲水性树脂电池 电池用含氧气体进行放电处理。

公开(公告)号：US20090230429A1

公开(公告)日：2009-09-17

申请号：US11921854

申请日：2006-06-12

Applicant: Hironobu Miyamoto ,  Yuji Ando ,  Yasuhiro Okamoto ,  Tasuo Nakayama ,  Takashi Inoue ,  Kazuki Ota ,  Akio Wakejima ,  Kensuke Kasahara ,  Yasuhiro Murase ,  Kohji Matsunaga ,  Katsumi Yamanoguchi ,  Hidenori Shimawaki

Inventor： Hironobu Miyamoto ,  Yuji Ando ,  Yasuhiro Okamoto ,  Tasuo Nakayama ,  Takashi Inoue ,  Kazuki Ota ,  Akio Wakejima ,  Kensuke Kasahara ,  Yasuhiro Murase ,  Kohji Matsunaga ,  Katsumi Yamanoguchi ,  Hidenori Shimawaki

IPC: H01L29/80

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/802 ,  H01L29/812

Abstract: A field effect transistor (100) exhibiting good performance at high voltage operation and high frequency includes a first field plate electrode (116) and a second field plate electrode (118). The second field plate electrode includes a shielding part (119) located in the region between the first field plate electrode and a drain electrode (114), and serves to shield the first field plate electrode from the drain electrode. When in the cross sectional view in the gate length direction, the length in the gate length direction of an overlap region where the second field plate electrode (118) overlap the upper part of a structure including the first field plate electrode and a gate electrode (113) is designated as Lol, and the gate length is Lg, the relation expressed as 0≦Lol/Lg≦1 holds.

Abstract translation: 在高电压运行和高频下表现出良好性能的场效应晶体管（100）包括第一场极板电极（116）和第二场板电极（118）。 第二场板电极包括位于第一场极板电极和漏电极（114）之间的区域中的屏蔽部分（119），用于屏蔽第一场极板电极与漏极电极。 当在栅极长度方向的横截面视图中，第二场板电极（118）与包括第一场极板电极和栅电极的结构的上部重叠的重叠区域的栅极长度方向上的长度（ 113）被指定为Lol，栅极长度为Lg，表示为0 <= Lol / Lg <= 1的关系成立。

公开(公告)号：US20090173968A1

公开(公告)日：2009-07-09

申请号：US12097700

申请日：2006-12-12

Applicant: Kouji Matsunaga ,  Kazuki Ota ,  Yasuhiro Okamoto ,  Tatsuo Nakayama ,  Akio Wakejima ,  Yuji Ando ,  Hironobu Miyamoto ,  Takashi Inoue ,  Yasuhiro Murase

Inventor： Kouji Matsunaga ,  Kazuki Ota ,  Yasuhiro Okamoto ,  Tatsuo Nakayama ,  Akio Wakejima ,  Yuji Ando ,  Hironobu Miyamoto ,  Takashi Inoue ,  Yasuhiro Murase

IPC: H01L29/205

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

Abstract: A semiconductor device 100 contains an undoped GaN channel layer 105, an AlGaN electron donor layer 106 provided on the undoped GaN channel layer 105 as being brought into contact therewith, an undoped GaN layer 107 provided on the AlGaN electron donor layer 106, a source electrode 101 and a drain electrode 103 provided on the undoped GaN layer 107 as being spaced from each other, a recess 111 provided in the region between the source electrode 101 and the drain electrode 103, as being extended through the undoped GaN layer 107, a gate electrode 102 buried in the recess 111 as being brought into contact with the AlGaN electron donor layer 106 on the bottom surface thereof, and an SiN film 108 provided on the undoped GaN layer 107, in the region between the gate electrode 102 and the drain electrode 103.

Abstract translation: 半导体器件100包含未掺杂的GaN沟道层105，设置在与其接触的未掺杂的GaN沟道层105上的AlGaN电子供体层106，设置在AlGaN电子供体层106上的未掺杂的GaN层107，源电极 101和设置在未掺杂的GaN层107上彼此间隔开的漏电极103，设置在源电极101和漏电极103之间的区域中的凹槽111延伸穿过未掺杂的GaN层107，栅极 埋入凹槽111中的电极102与其底表面上的AlGaN电子供体层106接触，以及设置在未掺杂的GaN层107上的SiN膜108，在栅电极102和漏极之间的区域 103。