Abstract:
An optical device includes a ridge on a base. The ridge includes an active medium. An active component on the base is a light sensor and/or a light modulator. The active component is configured to guide a light signal through the active medium included in the ridge. Electrical current carriers contact the lateral sides of the ridge on opposing sides of the ridge. Each of the electrical current carriers includes a carrier material that is doped so as to increase the electrical conductivity of the carrier material. The carrier material is different from the active medium.
Abstract:
It is an object to provide an optical control device capable of realizing speed matching between a microwave and a light wave or impedance matching of microwaves and of reducing a driving voltage. An optical control device including a thin plate 1 (11) which has an electro-optical effect and has a thickness of 10 μm or less, an optical waveguide 2 formed in the thin plate, and control electrodes for controlling light passing through the optical waveguide is characterized in that the control electrodes are configured to include a first electrode and a second electrode disposed to interpose the thin plate therebetween, the first electrode has a coplanar type electrode including at least a signal electrode 4 and a ground electrode 5, and the second electrode has at least a ground electrode 54 (55, 56) and is configured to apply an electric field to the optical waveguide in cooperation with the signal electrode of the first electrode.
Abstract:
The invention provides a semiconductor optical modulator including a two-step mesa optical waveguide having a first clad layer (101); a mesa-like core layer (102) formed over the first clad layer (101); and a second clad layer (103) formed into a mesa shape over the core layer (102), and having a mesa width smaller than that of the core layer (102). The two-step mesa optical waveguide includes a multi-mode optical waveguide region to which an electric field is applied or into which an electric current is injected, and a single-mode optical waveguide region to which the electric field is not applied and into which the electric current is not injected. When the mesa width of the core layer in the multi-mode optical waveguide region is defined as Wmesa1, and the mesa width of the core layer in the single-mode optical waveguide region is defined as Wmesa2, Wmesa1>Wmesa2 is satisfied.
Abstract:
Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.
Abstract:
The optical device includes a waveguide on a base. The device also includes a modulator on the base. The modulator includes an electro-absorption medium configured to receive a light signal from the waveguide. The modulator also includes field sources for generating an electrical field in the electro-absorption medium. The electro-absorption medium is a medium in which the Franz-Keldysh effect occurs in response to the formation of the electrical field in the electro-absorption medium. The field sources are configured so the electrical field is substantially parallel to the base.
Abstract:
A wavelength filter based on a symmetric PLC circuit comprising an MZ filter-based demultiplexer, a waveguide resonator, and an MZ filter-based multiplexer is presented. The wavelength filter is tuned using pulse width modulated drive signals that enable fine wavelength control resolution. Embodiments in accordance with the present invention attain narrow spectral filtering capability over a wide wavelength tuning range. Further, embodiments in accordance with the present invention mitigate chromatic dispersion.
Abstract:
The invention relates to a production method of a lateral electro-optical modulator on an SOI substrate, the modulator comprising a rib waveguide formed in the thin layer of silicon of the SOI substrate, the rib waveguide being placed between a doped region P and a doped region N formed in the thin layer of silicon, the rib waveguide occupying an intrinsic region of the thin layer, at least one doped zone P being formed in the rib and perpendicularly to the substrate. The method comprises masking steps of the thin layer of silicon to define therein the rib of the waveguide, etching of the rib, masking of the thin layer of silicon to delimit the parts to be doped P, doping of the parts to be doped P, masking of the thin layer of silicon to delimit the region to be doped N and doping of the region to be doped N. The masking steps utilizes a hard mask whereof the pattern defines the rib of the waveguide, the zone to be doped P in the rib of the waveguide and the limit of the doped region N relative to the rib of the waveguide.
Abstract:
Described is a method of controlling the absorption of light in a cavity, a system in which absorption is so controlled, and an interferometer embodying the underlying physical concept. Materials can be made to completely absorb incident light when the light is imposed in a specific pattern of illumination. Coherent perfect absorption, as the process is referred to, is achieved when a cavity is illuminated coherently and monochromatically by the time-reverse of the output of a lasing mode. Varying the parameters of the incident light and/or of the cavity allows the absorption of the incident light by the cavity to be controlled; enhanced or even reduced.
Abstract:
By introducing magneto-optical garnets with high Faraday rotation and low optical loss in a ring resonator, a nonreciprocal phase shift is generated to split the resonance wavelengths of clockwise and counter-clockwise modes under magnetic field. There are three main applications based on this nonreciprocal effect, optical isolators, optical circulators, and tunable optical filters. The concept of the tunable filters and the design of optical isolators for TE and TM modes are described in the paper. With proper optical ring isolator configurations, optical circulators can be realized.
Abstract:
The invention provides a semiconductor optical modulator including a two-step mesa optical waveguide having a first clad layer (101); a mesa-like core layer (102) formed over the first clad layer (101); and a second clad layer (103) formed into a mesa shape over the core layer (102), and having a mesa width smaller than that of the core layer (102). The two-step mesa optical waveguide includes a multi-mode optical waveguide region to which an electric field is applied or into which an electric current is injected, and a single-mode optical waveguide region to which the electric field is not applied and into which the electric current is not injected. When the mesa width of the core layer in the multi-mode optical waveguide region is defined as Wmesa1, and the mesa width of the core layer in the single-mode optical waveguide region is defined as Wmesa2, Wmesa1>Wmesa2 is satisfied.