公开(公告)号：US4686556A

公开(公告)日：1987-08-11

申请号：US797587

申请日：1985-11-13

Applicant: Klaus Dietrich

Inventor： Klaus Dietrich

IPC: H01J1/34 ,  H01L27/14

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: The invention relates to a photocathode for the infra-red range having a plurality of layers of semi-conductive and conductive material. The photocathode is transparent and sensitive in a spectral range of between approx. 1 and 20 .mu.m. This is achieved by the following layer structure:p.sub.1 : a highly doped p-layern.sub.2 : a highly doped n-layeri.sub.3 : an intrinsic layerp.sub.4 : a highly doped p-layerm.sub.5 : a thin metal layer, preferably of an atomic layer of Cs.The spectral sensitivity can be adjusted by applying a negative bias voltage to the layer p.sub.1 with respect to the layer P.sub.4. When this happens, the Fermi level of the layer p.sub.2 is shifted and the work function of the electrons is reduced.

Abstract translation: 本发明涉及一种用于红外线范围的光电阴极，具有多层半导体和导电材料。 光电阴极在光谱范围内是透明和敏感的。 1和20亩。 这通过以下层结构实现：p1：高掺杂p层n2：高掺杂n层i3：本征层p4：高掺杂p层m5：薄金属层，优选原子层 的Cs。 可以通过相对于层P4向层p1施加负偏置电压来调整光谱灵敏度。 当这种情况发生时，层p2的费米能级被移动，电子的功函数减小。

公开(公告)号：US4683163A

公开(公告)日：1987-07-28

申请号：US661501

申请日：1984-10-16

Applicant: Philippe Jarry ,  Mohamed L. Haji ,  Pierre Guittard ,  Bernard Guillemet ,  Claude Piaget

Inventor： Philippe Jarry ,  Mohamed L. Haji ,  Pierre Guittard ,  Bernard Guillemet ,  Claude Piaget

IPC: H01L27/146 ,  H01J1/34 ,  H01L21/208 ,  H01L23/15 ,  H01L31/0392 ,  H01L31/10 ,  C03C3/14

CPC classification number: H01L31/0392 ,  H01J1/34 ,  H01L23/15 ,  H01J2201/3423 ,  H01L2924/0002 ,  Y02E10/50 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

Abstract: A vitreous semiconductor supporting structure obtained by connecting semiconductor layers to a vitreous support constituted by at least two glasses. The semiconductor layers are constituted by an electrically and optically active n-ary III-V compound layer (3) and optional complementary layers for passivation (4), index adaptation (6), and protection (7). To keep the active layer in a compression state and optimize its electrical properties, the structure includes at least two glasses, an intermediate glass (15) providing thermoelastic properties and a supporting glass (16) providing a high softening temperature.

Abstract translation: 通过将半导体层连接到由至少两个眼镜构成的玻璃体支撑而获得的玻璃质半导体支撑结构。 半导体层由电和光学活性的n-ary III-V化合物层（3）和用于钝化（4），指数适应（6）和保护（7）的任选互补层构成。 为了将活性层保持在压缩状态并优化其电性能，该结构包括至少两个玻璃，提供热弹性的中间玻璃（15）和提供高软化温度的支撑玻璃（16）。

公开(公告)号：US4639638A

公开(公告)日：1987-01-27

申请号：US695155

申请日：1985-01-28

Applicant: John A. Purcell ,  John T. Puglis ,  Steven W. Duckett

Inventor： John A. Purcell ,  John T. Puglis ,  Steven W. Duckett

IPC: H01J1/32 ,  H01J9/12 ,  H01J43/10 ,  H01J43/22

CPC classification number: H01J9/12 ,  H01J1/32 ,  H01J43/10 ,  H01J2201/32 ,  H01J2201/3423 ,  H01J2201/3425

Abstract: The photosensitivity of a photomultiplier dynode to white light or infrared radiation is greatly reduced by coating the dynode with a layer of an alkali halide material having good secondary electron emission characteristics. A method of applying the coating to the dynode is also described.

Abstract translation: 通过用具有良好的二次电子发射特性的碱金属卤化物材料层涂覆倍增极来大大降低光电倍增管对白光或红外辐射的光敏性。 还描述了将涂层施加到倍增极的方法。

公开(公告)号：US4518980A

公开(公告)日：1985-05-21

申请号：US380633

申请日：1982-05-21

Applicant: Pierre Guittard ,  Philippe Jarry ,  Alphonse Ducarre ,  Lazhar Haji

Inventor： Pierre Guittard ,  Philippe Jarry ,  Alphonse Ducarre ,  Lazhar Haji

IPC: H01J1/30 ,  H01J1/308 ,  H01J1/32 ,  H01J1/34 ,  H01L29/161 ,  H01L27/14 ,  H01L29/205 ,  H01L31/00

CPC classification number: H01J1/32 ,  H01J1/34 ,  H01J2201/3423

Abstract: An electron emitting device including an active semiconductor layer having a surface from which electrons are emitted. The layer is doped with impurity atoms at a density which decreases with distance from the surface.

Abstract translation: 一种电子发射器件，包括具有发射电子的表面的有源半导体层。 该层以从表面的距离减小的密度掺杂杂质原子。

公开(公告)号：US4498225A

公开(公告)日：1985-02-12

申请号：US522768

申请日：1983-10-20

Applicant: William A. Gutierrez ,  Herbert L. Wilson

Inventor： William A. Gutierrez ,  Herbert L. Wilson

IPC: H01J1/34 ,  H01J9/12 ,  H01L31/18

CPC classification number: H01J1/34 ,  H01J9/12 ,  H01J2201/3423

Abstract: A method of forming a variable sensitivity transmission mode negative eleon affinity (NEA) photocathode in which the sensitivity of the photocathode to white or monochromatic light can be varied by varying the backsurface recombination velocity of the photoemitting material with an electric field. The basic structure of the photocathode is comprised of a Group III-V element photoemitter on a larger bandgap Group III-V element window substrate.

Abstract translation: 形成可变灵敏度透射模式负电子亲合力（NEA）光电阴极的方法，其中光电阴极对白色或单色光的灵敏度可以通过用电场改变光发射材料的背表面复合速度来改变。 光电阴极的基本结构由III-V族III族元素光电发射器组成。

公开(公告)号：US4096511A

公开(公告)日：1978-06-20

申请号：US309043

申请日：1972-11-28

Applicant: Philip Gurnell ,  Michael Charles Rowland

Inventor： Philip Gurnell ,  Michael Charles Rowland

IPC: H01J1/34 ,  H01J9/12 ,  H01L27/14

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J2201/3423

Abstract: A transmission photodetector operable at wavelengths greater than 0.86 micrometers comprising a substrate transparent to the radiation to be detected, at least one epitaxial intermediate layer comprising (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y As and an epitaxial p-type Ga.sub.1-y In.sub.y As detector layer. The said one intermediate layer may be p-type. If desired a second epitaxial intermediate layer comprising (Ga.sub.1-x Al.sub.x).sub.1-z In.sub.z As may be provided between the substrate and the said one intermediate layer. In the foregoing 0

Abstract translation: 透射光电探测器，其工作波长大于0.86微米，包括对要被检测的辐射透明的衬底，至少一个外延中间层，包括（Ga1-xAlx）1-yInAs和外延p型Ga1-yInYAs检测器层。 所述一个中间层可以是p型。 如果需要，可以在衬底和所述一个中间层之间提供包含（Ga1-xAlx）1-zInzAs的第二外延中间层。 在上述0

公开(公告)号：US4015284A

公开(公告)日：1977-03-29

申请号：US647761

申请日：1976-01-09

Applicant: Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

Inventor： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC: H01J1/34 ,  H01J9/12 ,  H01L29/161 ,  H01L27/14

CPC classification number: H01J1/34 ,  H01J9/12 ,  H01J2201/3423

Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

公开(公告)号：US4005465A

公开(公告)日：1977-01-25

申请号：US582545

申请日：1975-05-30

Applicant: Brian S. Miller

Inventor： Brian S. Miller

IPC: H01J1/312 ,  H01J1/34 ,  H01L49/02 ,  H01L27/14

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J1/34 ,  H01J2201/3423

Abstract: A method of producing a tunnel emitter photocathode consisting of heating aemiconductor layer and then depositing a layer of aluminum oxide on one side thereof at a rapid rate and then baking out the wafer in a hydrogen gas atmosphere. After depositing electrical contacts on each side of the wafer, a metallic emitter layer is evaporated over the aluminum oxide layer with the metallic emitter layer treated with a low work function material such as cesium and oxygen to further increase the emission efficiency.

Abstract translation: 一种制造隧道发射光电阴极的方法，该方法包括加热半导体层，然后以一定速度沉积一侧的氧化铝层，然后在氢气气氛中烘烤晶片。 在晶片的每一侧沉积电触点之后，金属发射极层在氧化铝层上蒸发，金属发射极层用低功函数材料如铯和氧处理，以进一步提高发射效率。

公开(公告)号：US4000503A

公开(公告)日：1976-12-28

申请号：US646382

申请日：1976-01-02

Applicant: Herbert F. Matare

Inventor： Herbert F. Matare

IPC: H01J1/34 ,  H01J29/38 ,  H01L29/161 ,  H01L27/14

CPC classification number: H01J1/34 ,  H01J29/38 ,  H01J2201/3423

Abstract: A cold cathode for an image-type tube such as a vidicon. The cathode features a negative electron affinity surface and a field enhanced electron ejection method. The photons generate electron-hole pairs in a compound semi-conductor structure having Group III and Group V compounds to form a heterojunction.

Abstract translation: 用于图像型管例如摄像机的冷阴极。 阴极具有负电子亲和力表面和场增强电子喷射方法。 光子在具有III族和V族化合物的化合物半导体结构中产生电子 - 空穴对以形成异质结。

公开(公告)号：US3992233A

公开(公告)日：1976-11-16

申请号：US578976

申请日：1975-05-19

Applicant: Robin Frederick Charles Farrow

Inventor： Robin Frederick Charles Farrow

IPC: H01J1/34 ,  H01J9/12 ,  H01J9/20 ,  H01L21/20 ,  H01L21/203 ,  H01L21/263 ,  H01L21/324 ,  H01L31/00

CPC classification number: H01J9/20 ,  H01J1/34 ,  H01J9/12 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/02661 ,  H01L21/2633 ,  H01L21/3245 ,  H01J2201/3423 ,  Y10S148/065 ,  Y10S148/12 ,  Y10S438/971

Abstract: Group III-V compound substrates are heat cleaned under vacuum conditions by heating above their congruent temperature and subjecting the substrate to at least one molecular beam of the material preferentially evaporating from the substrate thereby maintaining surface stoichiometry. Surfaces so cleaned may then have an epitaxial layer grown thereon under similiar conditions from molecular beams. Alternatively the cleaned surface may be coated with cesium and oxygen to form a photocathode.

Abstract translation: III-V族化合物基材在真空条件下通过加热高于其一致温度进行热清洗，并对基材进行至少一种材料的分子束优先从基材蒸发，从而保持表面化学计量。 然后如此清洁的表面可以在类似条件下在分子束上具有在其上生长的外延层。 或者，清洁的表面可以涂覆有铯和氧以形成光电阴极。