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    Multilevel light intensity modulator
    141.
    发明授权
    Multilevel light intensity modulator 有权
    多级光强调制器

    公开(公告)号：US07941011B2

    公开(公告)日：2011-05-10

    申请号：US12585618

    申请日：2009-09-18

    Applicant: Masaharu Doi

    Inventor： Masaharu Doi

    IPC: G02F1/01

    CPC classification number: H04B10/505 ,  G02F2001/212 ,  G02F2201/126 ,  G02F2201/127 ,  G02F2202/20 ,  G02F2203/20 ,  G02F2203/21 ,  H04B10/541 ,  H04L27/361

    Abstract: In a multilevel light intensity modulator of the invention, input light is branched into n (n is an integer of 2 or more), and respectively sent to n branching waveguides. On the branching waveguides are respectively provided MZI light modulating sections. The MZI light modulating sections branch the input light into two at a branching ratio different from 0.5:0.5, and respectively output a binary optical signal with a quenching ratio being deteriorated, by on/off driving with a binary electric signal. Then by coupling the light output from the MZI light modulating sections, an optical signal with the light intensity modulated to a 2n value not including the zero level is output. As a result quaternary or higher level light intensity modulation which does not include the zero level, can be realized by a practical configuration using a binary electric signal.

    Abstract translation: 在本发明的多电平光强度调制器中，输入光分支为n（n为2以上的整数），并分别发送到n个分支波导。 分支波导分别设置有MZI光调制部。 MZI光调制部以0.5：0.5的分支比将输入光分支为两个，分别通过二进制电信号的开/关驱动分别输出淬灭比劣化的二进制光信号。 然后通过耦合来自MZI光调制部分的光输出，输出光强度被调制到不包括零电平的2n值的光信号。 因此，不包括零电平的四级或更高级的光强调制可以通过使用二进制电信号的实际配置来实现。

    WAVEGUIDE TYPE OPTICAL DEVICE
    142.
    发明申请
    WAVEGUIDE TYPE OPTICAL DEVICE 有权
    波导型光学器件

    公开(公告)号：US20100260461A1

    公开(公告)日：2010-10-14

    申请号：US12747953

    申请日：2008-11-20

    Applicant: Takanori Shimizu ,  Masafumi Nakada

    Inventor： Takanori Shimizu ,  Masafumi Nakada

    IPC: G02B6/10

    CPC classification number: G02F1/035 ,  G02F2001/212 ,  G02F2201/066 ,  G02F2201/126 ,  G02F2203/15

    Abstract: There is provided a waveguide type optical device whose parasitic capacitance is reduced to allow an increase in signal transmission speed. Bottom electrode 41 is formed on substrate 2, bottom cladding 51 is formed on bottom electrode 41, and bottom core 62 is formed on bottom cladding 51. Top core 61 is formed on bottom core 62, top cladding 53 is formed on top core 61, and top electrode 42 is formed on top cladding 53. Two sides of top core 61 and bottom core 62 are covered with side cladding layer 52. Vertically overlapping portions of top electrode 42 and bottom electrode 41 are located almost at a same place as a region for a core layer composed of top core 61 and bottom core 62. The width of one from among top core 61 and bottom core 62 is satisfying a single mode condition, and the width of the other is almost equal to or more than the width of a field distribution.

    Abstract translation: 提供了一种其寄生电容减小以允许信号传输速度增加的波导型光学器件。 底部电极41形成在基板2上，底部包层51形成在底部电极41上，底部芯62形成在底部包层51上。顶部芯61形成在底部芯62上，顶部包层53形成在顶部芯61上， 并且顶部电极42形成在顶部包层53上。顶部芯61和底部芯62的两侧被侧包层52覆盖。顶部电极42和底部电极41的垂直重叠的部分几乎位于与区域 用于由顶芯61和底芯62组成的芯层。顶芯61和底芯62之一的宽度满足单模状态，另一个的宽度几乎等于或大于 一个现场分配。

    Silicon modulator offset tuning arrangement
    143.
    发明授权
    Silicon modulator offset tuning arrangement 有权
    硅调制器偏移调谐布置

    公开(公告)号：US07697793B2

    公开(公告)日：2010-04-13

    申请号：US12290285

    申请日：2008-10-29

    Applicant: Mark Webster ,  Vipulkumar Patel ,  Prakash Gothoskar

    Inventor： Mark Webster ,  Vipulkumar Patel ,  Prakash Gothoskar

    IPC: G02B6/12 ,  G02F1/295

    CPC classification number: G02F1/025 ,  G02F1/0147 ,  G02F1/225 ,  G02F2201/126

    Abstract: A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which hen transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index.

    Abstract translation: 基于硅的光学调制器结构包括一个或多个单独的局部加热元件，用于改变结构的相关部分的折射率，从而提供校正调整以解决器件性能的不期望的变化。 加热由诸如硅基电阻器，硅化物电阻器，正向偏置PN结等的热光器件提供，其中这些结构中的任何一个可以容易地与硅基光学调制器结合。 对这些结构中的任一个施加直流电压将产生热量，母鸡转移到波导区域中。 波导区域的局部温度的增加又将增加该区域中波导的折射率。 施加的直流电压的控制导致控制折射率。

    Multilevel light intensity modulator
    144.
    发明申请
    Multilevel light intensity modulator 有权
    多级光强调制器

    公开(公告)号：US20100014801A1

    公开(公告)日：2010-01-21

    申请号：US12585618

    申请日：2009-09-18

    Applicant: Masaharu Doi

    Inventor： Masaharu Doi

    IPC: G02F1/01

    CPC classification number: H04B10/505 ,  G02F2001/212 ,  G02F2201/126 ,  G02F2201/127 ,  G02F2202/20 ,  G02F2203/20 ,  G02F2203/21 ,  H04B10/541 ,  H04L27/361

    Abstract: In a multilevel light intensity modulator of the invention, input light is branched into n (n is an integer of 2 or more), and respectively sent to n branching waveguides. On the branching waveguides are respectively provided MZI light modulating sections. The MZI light modulating sections branch the input light into two at a branching ratio different from 0.5:0.5, and respectively output a binary optical signal with a quenching ratio being deteriorated, by on/off driving with a binary electric signal. Then by coupling the light output from the MZI light modulating sections, an optical signal with the light intensity modulated to a 2n value not including the zero level is output. As a result quaternary or higher level light intensity modulation which does not include the zero level, can be realized by a practical configuration using a binary electric signal.

    Abstract translation: 在本发明的多电平光强度调制器中，输入光分支为n（n为2以上的整数），并分别发送到n个分支波导。 分支波导分别设置有MZI光调制部。 MZI光调制部以0.5：0.5的分支比将输入光分支为两个，分别通过二进制电信号的开/关驱动分别输出淬灭比劣化的二进制光信号。 然后通过耦合来自MZI光调制部分的光输出，输出光强度被调制到不包括零电平的2n值的光信号。 因此，不包括零电平的四级或更高级的光强调制可以通过使用二进制电信号的实际配置来实现。

    Modulator driver with multi-channel active alignment
    145.
    发明申请
    Modulator driver with multi-channel active alignment 审中-公开
    具有多通道主动对准的调制器驱动程序

    公开(公告)号：US20090245813A1

    公开(公告)日：2009-10-01

    申请号：US12383914

    申请日：2009-03-30

    Applicant: Andrew John Bonthron

    Inventor： Andrew John Bonthron

    IPC: H04B10/04

    CPC classification number: G02F1/0327 ,  G02F1/225 ,  G02F2201/126

    Abstract: Modulator driver for driving an electro-optical modulator in a high-speed optical communications system. In accordance with aspects of the present invention, a modulator driver is presented comprising an active signal splitter providing a first pair and a second pair of differential output signals, each pair of differential output signals input to a separate variable delay circuit, each variable delay circuit in turn feeding an output buffer, whereby one signal from each output buffer is used as an output drive signal, and the other signal from each output buffer is input to a phase processor which is used to actively control said variable delay circuits, whereby the circuit architecture is compatible with compact, monolithic fabrication requiring a minimal amount of external components for operation. Other methods and apparatus are presented.

    Abstract translation: 用于在高速光通信系统中驱动电光调制器的调制器驱动器。 根据本发明的方面，提出了一种调制器驱动器，其包括提供第一对和第二对差分输出信号的有源信号分离器，每对差分输出信号输入到单独的可变延迟电路，每个可变延迟电路 进而输出一个输出缓冲器，由此来自每个输出缓冲器的一个信号用作输出驱动信号，并且来自每个输出缓冲器的另一个信号被输入到用于主动地控制所述可变延迟电路的相位处理器，由此电路 架构与紧凑的单片制造兼容，需要最少量的外部元件进行操作。 介绍了其他方法和装置。

    Silicon modulator offset tuning arrangement
    146.
    发明申请
    Silicon modulator offset tuning arrangement 有权
    硅调制器偏移调谐布置

    公开(公告)号：US20090110342A1

    公开(公告)日：2009-04-30

    申请号：US12290285

    申请日：2008-10-29

    Applicant: Mark Webster ,  Vipulkumar Patel ,  Prakash Gothoskar

    Inventor： Mark Webster ,  Vipulkumar Patel ,  Prakash Gothoskar

    IPC: G02F1/035

    CPC classification number: G02F1/025 ,  G02F1/0147 ,  G02F1/225 ,  G02F2201/126

    Abstract: A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which then transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index

    Abstract translation: 基于硅的光学调制器结构包括一个或多个单独的局部加热元件，用于改变结构的相关部分的折射率，从而提供校正调整以解决器件性能的不期望的变化。 加热由诸如硅基电阻器，硅化物电阻器，正向偏置PN结等的热光器件提供，其中这些结构中的任何一个可以容易地与硅基光学调制器结合。 对这些结构中的任何一个施加直流电压将产生热量，然后传递到波导区域。 波导区域的局部温度的增加又将增加该区域中波导的折射率。 施加的直流电压的控制导致控制折射率

    Method of forming ohmic contact to a semiconductor body
    148.
    发明授权
    Method of forming ohmic contact to a semiconductor body 有权
    与半导体本体形成欧姆接触的方法

    公开(公告)号：US07384826B2

    公开(公告)日：2008-06-10

    申请号：US11169820

    申请日：2005-06-29

    Applicant: Giovanni Richieri

    Inventor： Giovanni Richieri

    IPC: H01L21/332

    CPC classification number: H01L29/417 ,  G02F2001/0155 ,  G02F2201/126

    Abstract: A process for forming an ohmic contact on the back surface of a semiconductor body includes depositing a donor layer on the back surface of the semiconductor body followed by a sintering step to form a shallow intermetallic region capable of forming a low resistance contact with a contact metal.

    Abstract translation: 在半导体本体的背面上形成欧姆接触的工艺包括在半导体本体的后表面上沉积施主层，随后进行烧结步骤以形成能够与接触金属形成低电阻接触的浅金属间区域 。

    Electrooptic modulator employing DC coupled electrodes
    150.
    发明授权
    Electrooptic modulator employing DC coupled electrodes 失效
    采用直流耦合电极的电光调制器

    公开(公告)号：US07231102B2

    公开(公告)日：2007-06-12

    申请号：US11033038

    申请日：2005-01-11

    Applicant: Richard W. Ridgway

    Inventor： Richard W. Ridgway

    IPC: G02F1/295

    CPC classification number: G02F1/065 ,  G02F1/0121 ,  G02F1/2255 ,  G02F2001/212 ,  G02F2201/126 ,  G02F2203/06

    Abstract: Optical devices are provided for optical signal modulation under the control of an electrical signal propagating along a traveling wave electrode structure. The electrode structure comprises a coplanar stripline including a control signal electrode interposed between a pair of ground plane electrodes. Each of the ground plane electrodes defines a positively or negatively biased elevated ground plane portion isolated from the control signal input and the control signal output. The present invention also contemplates provision of a coplanar stripline as described and claimed herein.

    Abstract translation: 在沿着行波电极结构传播的电信号的控制下，提供光学装置用于光信号调制。 电极结构包括共面带状线，其包括置于一对接地平面电极之间的控制信号电极。 每个接地平面电极限定与控制信号输入和控制信号输出隔离的正或负偏置的升高的接地平面部分。 本发明还考虑提供如本文所述和要求保护的共面带状线。

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