公开(公告)号：US20070127004A1

公开(公告)日：2007-06-07

申请号：US11671571

申请日：2007-02-06

Applicant: Masami Yonekawa

Inventor： Masami Yonekawa

IPC: G03B27/42

CPC classification number: H01L21/67248 ,  G03F7/70525 ,  G03F7/70808 ,  G03F7/70841 ,  G03F7/7085 ,  G03F7/70858 ,  G03F7/70916 ,  H01L21/67126 ,  H01L21/67201 ,  H01L21/67225

Abstract: An exposure apparatus for exposing a substrate. The apparatus includes an optical system being set at a reference temperature, for directing light to the substrate, an exposure chamber for storing the optical system in a vacuum ambience, and a load-lock chamber, disposed adjacent to the exposure chamber, for converting an ambience of a space surrounding the substrate into a vacuum ambience. When the load-lock chamber converts the ambience of the space surrounding the substrate into a vacuum ambience, the temperature of the load-lock chamber is made higher than the reference temperature.

Abstract translation: 一种用于曝光衬底的曝光装置。 该装置包括设置在参考温度的光学系统，用于将光引导到基板，用于将光学系统存储在真空环境中的曝光室和与曝光室相邻设置的装载锁定室，用于转换 围绕衬底的空间的氛围变成真空环境。 当负载锁定室将基板周围的空间的环境转换为真空环境时，使负载锁定室的温度高于参考温度。

公开(公告)号：US07226512B2

公开(公告)日：2007-06-05

申请号：US10465906

申请日：2003-06-18

Applicant: Michael A. Fury ,  Robert W. Sherrill

Inventor： Michael A. Fury ,  Robert W. Sherrill

IPC: B08B5/04

CPC classification number: H01L21/67167 ,  H01L21/67017 ,  H01L21/67201 ,  H01L21/67745 ,  Y10S134/902 ,  Y10S414/138 ,  Y10S414/139 ,  Y10S414/141

Abstract: A substrate is transferred from an environment at about vacuum into a load lock through a first door. The substrate is then sealed within the load lock. The pressure within the load lock is raised to a high pressure above vacuum. A second door coupling the load lock to a high-pressure processing chamber is then opened and the substrate moved from the load lock into the high-pressure chamber. The substrate is then sealed within the high-pressure chamber. High-pressure processing, such as high pressure cleaning or high pressure deposition, is then performed on the substrate within the high-pressure chamber. Subsequently, the second door is opened and the substrate transferred into the load lock. The substrate is then sealed within the load lock. The pressure within the load lock is lowered to about vacuum and the first door opened. The substrate is then removed from the load lock into the environment.

Abstract translation: 将基板从大约真空的环境转移到通过第一门的加载锁定中。 然后将衬底密封在装载锁中。 负载锁中的压力升高到高于真空的高压。 然后打开将负载锁耦合到高压处理室的第二扇门，并且衬底从负载锁移动到高压室中。 然后将衬底密封在高压室内。 然后在高压室内的基板上进行高压处理，例如高压清洗或高压沉积。 随后，打开第二扇门并将基板转移到装载锁中。 然后将衬底密封在装载锁中。 负载锁中的压力降低到大约真空，第一门打开。 然后将衬底从负载锁移除到环境中。

公开(公告)号：US20070086881A1

公开(公告)日：2007-04-19

申请号：US11613556

申请日：2006-12-20

Applicant: Shinichi Kurita ,  Wendell Blonigan ,  Akihiro Hosokawa

Inventor： Shinichi Kurita ,  Wendell Blonigan ,  Akihiro Hosokawa

IPC: H01L21/677 ,  H01L21/306 ,  C23C16/00 ,  B65H1/00

CPC classification number: H01L21/68742 ,  B65G49/068 ,  B65G2249/02 ,  B65G2249/04 ,  C23C14/566 ,  C23C14/568 ,  C23C16/54 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/67739 ,  H01L21/67745 ,  H01L21/67748

Abstract: One embodiment relates to a loadlock having a first support structure therein to support one unprocessed substrate and a second support structure therein to support one processed substrate. The first support structure is located above the second support structure. The loadlock includes an elevator to control the vertical position of the support structures. The loadlock also includes a first aperture to permit insertion of an unprocessed substrate into the loadlock and removal of a processed substrate from the loadlock, as well as a second aperture to permit removal of an unprocessed substrate from the loadlock and insertion of a processed substrate into the loadlock. A cooling plate is also located in the loadlock. The cooling plate includes a surface adapted to support a processed substrate thereon. A heating device may be located in the loadlock above the first support structure.

Abstract translation: 一个实施例涉及一种其中具有第一支撑结构的负载锁，用于支撑一个未处理的基板和其中的第二支撑结构以支撑一个处理的基板。 第一支撑结构位于第二支撑结构的上方。 负载锁包括用于控制支撑结构的垂直位置的电梯。 负载锁还包括第一孔，以允许将未处理的衬底插入到装载锁中并从加载锁中移除经处理的衬底，以及第二孔，以允许将未处理的衬底从负载锁上移除并将经处理的衬底插入 负载锁。 一个冷却板也位于负载锁中。 冷却板包括适于在其上支撑经处理的基板的表面。 加热装置可以位于第一支撑结构上方的装载锁中。

公开(公告)号：US20070077134A1

公开(公告)日：2007-04-05

申请号：US11239968

申请日：2005-09-30

Applicant: Colin Dickinson

Inventor： Colin Dickinson

IPC: H01L21/677

CPC classification number: H01L21/67201

Abstract: Apparatus and methods useful for flexible factory automation of semiconductor vacuum systems are presented, including a load lock accessible by robotic means located in a substrate handler connected to and positioned between the load lock and a vacuum process chamber. The substrate handler has a substrate storage position and a substrate active position, wherein the substrate handler is adapted to be isolated from the load lock when the load lock is pumped down, and a single vacuum pump is used to service both the load lock and the substrate handler.

Abstract translation: 提出了可用于半导体真空系统的灵活工厂自动化的装置和方法，包括可通过位于连接到并位于负载锁和真空处理室之间的基板处理器中的机器人装置接近的负载锁定。 衬底处理器具有衬底存储位置和衬底活动位置，其中当负载锁定被泵送时，衬底处理器适于与负载锁隔离，并且使用单个真空泵来服务负载锁和 衬底处理器。

公开(公告)号：US07198448B2

公开(公告)日：2007-04-03

申请号：US11332653

申请日：2006-01-13

Applicant: Jun Ozawa ,  Jun Hirose ,  Masaki Narushima

Inventor： Jun Ozawa ,  Jun Hirose ,  Masaki Narushima

IPC: B65G49/07

CPC classification number: H01L21/67161 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67745 ,  Y10S414/139

Abstract: A vacuum process system comprises: a load port on which an object to be processed is set; a common transfer chamber disposed adjacent to the load port, having an internal space set at an atmospheric pressure level, and including a first transfer device that is movable and transfers the object into/from the load port, the first transfer device being disposed within the internal space; and a process unit having one process chamber for subjecting the object to a predetermined process, and a vacuum transfer chamber connected to the process chamber, having an internal space set at a vacuum pressure level, and including a second transfer device for transferring the object into/from the process chamber, the second transfer device being disposed within the internal space. The process units are individually connected to the common transfer chamber such that the process units are substantially parallel to each other. The vacuum chamber of each process unit is connected to the common transfer chamber. Each process unit extends linearly in a direction substantially perpendicular to the common transfer chamber. The object is transferred into/from the vacuum transfer chamber by means of the first transfer device.

Abstract translation: 真空处理系统包括：设置待处理对象的装载端口; 与负载端口相邻设置的公共传送室，具有设定在大气压力水平的内部空间，并且包括第一传送装置，该第一传送装置可移动并将物体传送到/从所述装载端口传送，所述第一传送装置设置在所述传送室内 内部空间; 以及处理单元，其具有用于使物体经受预定处理的一个处理室和连接到处理室的真空传送室，其具有设置在真空压力水平的内部空间，并且包括用于将物体传送到 /从处理室，第二传送装置设置在内部空间内。 处理单元分别连接到公共传送室，使得处理单元基本上彼此平行。 每个处理单元的真空室连接到公共传送室。 每个处理单元在基本上垂直于公共传送室的方向上线性地延伸。 物体通过第一传送装置传送到/从真空传送室传送。

公开(公告)号：US07105463B2

公开(公告)日：2006-09-12

申请号：US09957784

申请日：2001-09-21

Applicant: Shinichi Kurita ,  Wendell T. Blonigan

Inventor： Shinichi Kurita ,  Wendell T. Blonigan

IPC: H01L21/31

CPC classification number: H01L21/67748 ,  H01L21/67098 ,  H01L21/67167 ,  H01L21/67201

Abstract: Provided herein is a substrate processing system, which comprises a cassette load station; a load lock chamber; a centrally located transfer chamber; and one or more process chambers located about the periphery of the transfer chamber. The load lock chamber comprises double dual slot load locks constructed at same location. Such system may be used for processing substrates for semiconductor manufacturing.

Abstract translation: 本文提供了一种基板处理系统，其包括盒式装载台; 负载锁定室; 位于中心的传送室; 以及位于传送室的周边周围的一个或多个处理室。 负载锁定室包括在相同位置构造的双重双槽加载锁。 这种系统可用于处理用于半导体制造的衬底。

公开(公告)号：US20060196023A1

公开(公告)日：2006-09-07

申请号：US11070443

申请日：2005-03-02

Applicant: Min-Lyul Lee

Inventor： Min-Lyul Lee

IPC: B21D33/00 ,  B32B37/00

CPC classification number: H01L21/67727 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  Y10T29/302

Abstract: A process module and a method of making the same for processing substrates comprising two different types of materials, one of the materials being a corrosive-retardant material forming a module interior face disposed to be subjected to the interior atmosphere in the module, and another of the materials being located on the side of the corrosive-retardant material to define a module outer face opposite the interior face, wherein the corrosive-retardant material and the other material are joined together.

Abstract translation: 一种处理模块及其制造方法，用于处理包括两种不同类型的材料的基材，其中一种材料是形成模块内表面的腐蚀性阻燃材料，该模块内表面被设置成在该模块中经受内部气氛，另一种 所述材料位于所述腐蚀性阻燃材料的一侧以限定与所述内表面相对的模块外表面，其中所述腐蚀性阻燃材料和所述其它材料接合在一起。

公开(公告)号：US20060182540A1

公开(公告)日：2006-08-17

申请号：US11334113

申请日：2006-01-18

Applicant: Geun-Ha Jang ,  Ch-wook Yu

Inventor： Geun-Ha Jang ,  Ch-wook Yu

IPC: H01L21/677

CPC classification number: H01L21/67167 ,  H01L21/67161 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201

Abstract: A cluster device having a dual structure includes: a substrate storage containing a plurality of substrates, the substrate storage having an ATM robot that moves said substrates; a first cluster including a first transfer chamber having a vacuum robot, a plurality of first process chambers connected to the first transfer chamber, and a first load lock chamber connected to both the substrate storage and the first transfer chamber, a second cluster including a second transfer chamber under the first transfer chamber, a plurality of second process chambers connected to the second transfer chamber, each of the plurality of second process chambers positioned between the two first process chambers, and a second load lock chamber connected to both the substrate storage and the second transfer chamber.

Abstract translation: 具有双重结构的集群装置包括：包含多个基板的基板存储器，所述基板存储器具有移动所述基板的ATM机器人; 第一集束，包括具有真空机器人的第一传送室，连接到第一传送室的多个第一处理室，以及连接到基板存储和第一传送室两者的第一加载锁定室;第二集群， 在第一传送室下方的多个第二处理室，连接到第二传送室的多个第二处理室，位于两个第一处理室之间的多个第二处理室中的每一个，以及连接到基板存储和 第二传送室。

公开(公告)号：US20060182532A1

公开(公告)日：2006-08-17

申请号：US11254854

申请日：2005-10-21

Applicant: Keiji Okada ,  Fumiaki Sato ,  Hiroaki Nakaoka

Inventor： Keiji Okada ,  Fumiaki Sato ,  Hiroaki Nakaoka

IPC: B65G1/00

CPC classification number: H01L21/67213 ,  H01L21/67201 ,  H01L21/67745

Abstract: Two load lock chambers having a load lock pedestal are provided adjacent to a vacuum process chamber through a vacuum intermediate chamber. A passage opening is provided between the vacuum process chamber and the vacuum intermediate chamber. Two wafer retaining arms are installed between a platen device in the vacuum process chamber and the vacuum intermediate chamber. The two wafer retaining arms are reciprocatingly movable between the corresponding load lock pedestals and the platen device while passing through the passage opening and crossing with an overpass each other at different levels. By retaining an unprocessed wafer by one of the wafer retaining arms and retaining a processed wafer by the other wafer retaining arm, transfer of the unprocessed wafer from one of the load lock pedestals to the platen device and transfer of the processed wafer from the platen device to the other load lock pedestal are performed simultaneously.

Abstract translation: 具有负载锁定基座的两个负载锁定室通过真空中间室邻近真空处理室设置。 在真空处理室和真空中间室之间设有通道开口。 两个晶片保持臂安装在真空处理室中的压板装置和真空中间室之间。 两个晶片保持臂在相应的负载锁定基座和压板装置之间可往复运动，同时穿过通道开口并与不同级别的立交桥交叉。 通过用晶片保持臂中的一个保持未加工的晶片并通过另一个晶片保持臂保持经处理的晶片，将未加工的晶片从负载锁定基座之一转移到压板装置，并将经处理的晶片从压板装置 到另一个负载锁定基座同时进行。

公开(公告)号：US20060090703A1

公开(公告)日：2006-05-04

申请号：US11263033

申请日：2005-11-01

Applicant: Seiichi Kaise ,  Noriyuki Iwabuchi ,  Shigeaki Kato ,  Hiroshi Nakamura ,  Takeshi Yokouchi ,  Mariko Shibata ,  Akira Obi

Inventor： Seiichi Kaise ,  Noriyuki Iwabuchi ,  Shigeaki Kato ,  Hiroshi Nakamura ,  Takeshi Yokouchi ,  Mariko Shibata ,  Akira Obi

IPC: C23C16/00

CPC classification number: H01L21/67748 ,  H01J37/32743 ,  H01L21/67201 ,  H01L21/6831

Abstract: A substrate processing method is used for a substrate processing system having a substrate processing device and a substrate transfer device. The substrate processing method includes a substrate transfer step of transferring a substrate and a substrate processing step of performing a predetermined process on the substrate. The substrate transfer step and the substrate processing step include a plurality of operations, and at least two operations among the plurality of the operations are performed simultaneously. Preferably, the substrate processing device includes an accommodating chamber, a mounting table placed in the accommodating chamber to be mounted thereon the substrate, and a heat transfer gas supply line for supplying a heat transfer gas to a space between the substrate mounted on the mounting table and the mounting table.