公开(公告)号：US20070074652A1

公开(公告)日：2007-04-05

申请号：US11523824

申请日：2006-09-14

Applicant: Didier Dutartre ,  Nicolas Loubet ,  Alexandre Talbot

Inventor： Didier Dutartre ,  Nicolas Loubet ,  Alexandre Talbot

IPC: C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B25/18 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02661

Abstract: A method for low-temperature epitaxy at the surface of at least one plate made of a pure silicon- or silicon alloy (SiGe, SiC, SiGeC . . . )-based material, in a chemical vapor deposition (CVD) system, in particular a rapid thermal (RTCVD) system, which method includes the following steps: loading the plate into the equipment, at a loading temperature, preparing the surface for the deposition of new chemical species, and after preparing the surface, performing the deposition under low-temperature epitaxy conditions (>750° C.), in which method the preparation of the surface includes a step of passivation of the surface by injection of an active gas, or gas mixture.

Abstract translation: 特别是在化学气相沉积（CVD）系统中由纯硅或硅合金（SiGe，SiC，SiGeC ...）基材料制成的至少一块板表面的低温外延方法 一种快速热（RTCVD）系统，该方法包括以下步骤：在装载温度下将板装载到设备中，制备用于沉积新化学物质的表面，并且在制备表面之后，在低温下进行沉积， 温度外延条件（> 750℃），其中制备表面的方法包括通过注入活性气体或气体混合物钝化表面的步骤。

公开(公告)号：US07892927B2

公开(公告)日：2011-02-22

申请号：US11725160

申请日：2007-03-16

Applicant: Stephane Monfray ,  Thomas Skotnicki ,  Didier Dutartre ,  Alexandre Talbot

Inventor： Stephane Monfray ,  Thomas Skotnicki ,  Didier Dutartre ,  Alexandre Talbot

IPC: H01L21/336

CPC classification number: H01L29/78684 ,  H01L29/66628 ,  H01L29/66772

Abstract: A transistor including a germanium-rich channel. The germanium-rich channel is produced by oxidation of the silicon contained in the silicon-germanium intermediate layer starting from the lower surface of the said intermediate layer. The germanium atoms are therefore caused to migrate towards the upper surface of the silicon-germanium intermediate layer, and are stopped by the gate insulating layer. The migration of the atoms during the oxidation step is thus less prejudicial to the performance of the transistor, since the gate insulator of the transistor has already been produced and is not modified during this step. The migration of the germanium atoms towards the gate insulator, which is immobile, leads to a limitation of the surface defects between the channel and the insulator.

Abstract translation: 包括富含锗的通道的晶体管。 通过从所述中间层的下表面开始的硅 - 锗中间层中包含的硅的氧化产生富锗的通道。 因此锗原子迁移到硅 - 锗中间层的上表面，并被栅极绝缘层阻挡。 因此，在氧化步骤期间原子的迁移对晶体管的性能的影响较小，因为晶体管的栅极绝缘体已经被制造并且在该步骤期间不被修改。 锗原子向固定的栅极绝缘体的迁移导致通道和绝缘体之间的表面缺陷的限制。

公开(公告)号：US20070190754A1

公开(公告)日：2007-08-16

申请号：US11704638

申请日：2007-02-09

Applicant: Didier Dutartre ,  Nicolas Loubet ,  Alexandre Talbot

Inventor： Didier Dutartre ,  Nicolas Loubet ,  Alexandre Talbot

IPC: H01L21/20

CPC classification number: H01L29/66772 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02639

Abstract: A method for forming a single-crystal semiconductor layer portion above a hollowed area, including growing by selective epitaxy on an active single-crystal semiconductor region a sacrificial single-crystal semiconductor layer and a single-crystal semiconductor layer, and removing the sacrificial layer. The epitaxial growth is performed while the active region is surrounded with a raised insulating layer and the removal of the sacrificial single-crystal semiconductor layer is performed through an access resulting from an at least partial removal of the raised insulating layer.

Abstract translation: 一种用于在中空区域上方形成单晶半导体层部分的方法，包括通过牺牲单晶半导体层和单晶半导体层在活性单晶半导体区域上的选择性外延生长，以及去除牺牲层。 在有源区域被凸起的绝缘层围绕的同时进行外延生长，并且通过由至少部分去除凸起的绝缘层获得的访问来执行牺牲单晶半导体层的去除。