Methods of treatment with drug delivery after biodegradation of the stent scaffolding
    12.
    发明授权
    Methods of treatment with drug delivery after biodegradation of the stent scaffolding 有权
    在支架支架生物降解后用药物递送治疗的方法

    公开(公告)号:US08469968B2

    公开(公告)日:2013-06-25

    申请号:US13185370

    申请日:2011-07-18

    Abstract: Disclosed is a stent comprising a bioabsorbable polymeric scaffolding; and a plurality of depots in at least a portion of the scaffolding, wherein the plurality of depots comprise a bioabsorbable material, wherein the degradation rate of all or substantially all of the bioabsorbable polymer of the scaffolding is faster than the degradation rate of all or substantially all of the bioabsorbable material of the depots.

    Abstract translation: 公开了一种支架,其包括生物可吸收聚合物支架; 以及在所述脚手架的至少一部分中的多个仓库,其中所述多个仓库包含生物可吸收材料,其中所述脚手架的所有或基本上全部所述生物可吸收聚合物的降解速度比全部或基本上 所有生物可吸收材料的仓库。

    DEVICE WITH ALUMINUM SURFACE PROTECTION
    19.
    发明申请
    DEVICE WITH ALUMINUM SURFACE PROTECTION 有权
    具有铝表面保护的器件

    公开(公告)号:US20120086075A1

    公开(公告)日:2012-04-12

    申请号:US13327992

    申请日:2011-12-16

    Abstract: A semiconductor structure with a metal gate structure includes a first type field-effect transistor having a first gate including: a high k dielectric material on a substrate, a first metal layer on the high k dielectric material layer and having a first work function, and a first aluminum layer on the first metal layer. The first aluminum layer includes an interfacial layer including aluminum, nitrogen and oxygen. The device also includes a second type field-effect transistor having a second gate including: the high k dielectric material on the substrate, a second metal layer on the high k dielectric material layer and having a second work function different from the first work function, and a second aluminum layer on the second metal layer.

    Abstract translation: 具有金属栅极结构的半导体结构包括具有第一栅极的第一型场效应晶体管,包括:基板上的高k电介质材料,高k电介质材料层上的第一金属层,具有第一功函数,以及 在第一金属层上的第一铝层。 第一铝层包括包含铝,氮和氧的界面层。 该器件还包括具有第二栅极的第二类场效应晶体管,其包括:衬底上的高k电介质材料,高k电介质材料层上的第二金属层,具有不同于第一功函数的第二功函数, 和在第二金属层上的第二铝层。

    Optimizing fracture toughness of polymeric stent
    20.
    发明授权
    Optimizing fracture toughness of polymeric stent 有权
    优化聚合物支架的断裂韧性

    公开(公告)号:US08099849B2

    公开(公告)日:2012-01-24

    申请号:US11639079

    申请日:2006-12-13

    Abstract: Disclosed herein is a method of fabricating a stent assembly comprising radially expanding a polymeric tube to an optimal degree of radial expansion; fabricating a stent from the expanded polymeric tube; and crimping the stent onto a catheter assembly, wherein the temperature of the stent during crimping is an optimal crimping temperature, wherein the optimal degree of radial expansion and the optimal crimping temperature correspond to an optimal fracture toughness exhibited by the crimped stent upon its deployment as a function of degree of radial expansion and crimping temperature.

    Abstract translation: 本文公开了一种制造支架组件的方法,包括将聚合物管径向膨胀至最佳径向膨胀程度; 从扩张的聚合物管制造支架; 并将支架卷曲到导管组件上,其中在卷曲期间支架的温度是最佳卷曲温度,其中最佳径向膨胀程度和最佳卷曲温度对应于卷曲支架在展开时表现出的最佳断裂韧性 径向膨胀度和卷曲温度的函数。

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