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公开(公告)号：US20170249982A1
公开(公告)日：2017-08-31
申请号：US15516085
申请日：2015-10-02
Applicant: CROCUS Technology SA
Inventor： Yann Conraux
IPC: G11C11/16
CPC classification number: G11C11/1675 , G11C11/1673 , G11C11/1693
Abstract: Method for programming a magnetic device including a plurality of magnetic logical unit MLU cells using a single programming current, each MLU cell includes a storage magnetic layer having a storage magnetization that is pinned at a low threshold temperature and freely orientable at a high threshold temperature. A programming line is physically separated from each of the plurality of MLU cells and configured for passing a programming current pulse for programming any one of the plurality of MLU cells. The method includes: passing the programming current in the field line for heating the magnetic tunnel junction of each of the plurality of MLU cells at the high threshold temperature such as to unpin the second magnetization; wherein the programming current is further adapted for generating a programming magnetic field adapted for switching the storage magnetization of each of the plurality of MLU cells in a programmed direction.
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12.发明申请公开(公告)号：US20170243625A1
公开(公告)日：2017-08-24
申请号：US15516098
申请日：2015-09-24
Applicant: CROCUS Technology SA
Inventor： Quentin Stainer
CPC classification number: G11C11/1675 , G01R33/098 , G11C11/161 , G11C11/1673
Abstract: A self-referenced MRAM cell including a reference layer having a fixed reference magnetization, a sense layer having a free sense magnetization, a tunnel barrier, a biasing layer having bias magnetization and a biasing antiferromagnetic layer pinning the bias magnetization in a bias direction when MRAM cell is at temperature equal or below a bias threshold temperature. The bias magnetization is arranged for inducing a bias field adapted for biasing the sense magnetization in a direction opposed to the bias direction, such that the biased sense magnetization varies linearly in the presence of the external magnetic field, when the external magnetic field is oriented in a direction substantially perpendicular to the one of the reference magnetization. The present disclosure further concerns a magnetic field sensor including a plurality of the self-referenced MRAM cell and a method for programming the magnetic field sensor.
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13.发明申请公开(公告)号：US20170169871A1
公开(公告)日：2017-06-15
申请号：US15116959
申请日：2015-02-03
Applicant: CROCUS Technology SA
Inventor： Quentin Stainer
CPC classification number: G11C11/1675 , G11C11/5607 , G11C11/5628 , G11C15/02 , H01F10/3272 , H01L27/222
Abstract: A method for writing a MRAM device, including magnetic tunnel junction with a storage layer, a sense layer, and a spacer layer between the storage and sense layers. At least one of the storage and sense layers has a magnetic anisotropy axis. The method includes an initialization step including: applying an initial heating current pulse for heating the magnetic tunnel junction to a temperature above a threshold temperature at which a storage magnetization is freely orientable, providing an initial resultant magnetic field for adjusting the storage magnetization in an initial direction oriented along the magnetic anisotropy axis. The method allows performing the writing step with improved reproducibly.
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14.发明申请MULTI-BIT MRAM CELL AND METHOD FOR WRITING AND READING TO SUCH MRAM CELL 有权用于写入和读取这些MRAM细胞的多位MRAM细胞和方法公开(公告)号：US20170076771A1
公开(公告)日：2017-03-16
申请号：US15309229
申请日：2015-04-23
Applicant: CROCUS Technology SA
Inventor： Quentin STAINER
CPC classification number: G11C11/161 , G11C11/15 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C11/5607
Abstract: A multi-bit magnetic random access memory (MRAM) cell including a magnetic tunnel junction including: a first magnetic storage layer, a second magnetic storage layer, a magnetic sense layer, a first spacer layer between the first magnetic storage layer and the magnetic sense layer, and a second spacer layer between the second magnetic storage layer and the sense layer. The first and second storage magnetization are switchable between m directions to store data corresponding to one of m2 logic states, with m>2. The present disclosure further concerns a method for writing and reading to the MRAM cell and to memory devices including multi-bit MRAM cells.
Abstract translation: 一种包括磁性隧道结的多位磁随机存取存储器（MRAM）单元，包括：第一磁存储层，第二磁存储层，磁感应层，第一磁存储层与磁感应之间的第一间隔层 层，以及在第二磁存储层和感测层之间的第二间隔层。 第一和第二存储磁化可在m个方向之间切换以存储对应于m2逻辑状态之一的数据，其中m> 2。 本公开还涉及用于写入和读取到MRAM单元和包括多位MRAM单元的存储器件的方法。
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15.发明授权Magnetic random access memory cell with a dual junction for ternary content addressable memory applications 有权具有用于三元内容可寻址存储器应用的双结的磁性随机存取存储器单元公开(公告)号：US09548094B2
公开(公告)日：2017-01-17
申请号：US15190499
申请日：2016-06-23
Applicant: Crocus Technology SA
Inventor： Bertrand Cambou
CPC classification number: G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C15/02 , G11C15/046
Abstract: A MRAM cell including a first tunnel barrier layer between a soft ferromagnetic layer having a free magnetization and a first hard ferromagnetic layer having a first storage magnetization. A second tunnel barrier layer is between the soft ferromagnetic layer and a second hard ferromagnetic layer and has a second storage magnetization. The first storage magnetization is freely orientable at a first high predetermined temperature threshold and the second storage magnetization being freely orientable at a second predetermined high temperature threshold. The first high predetermined temperature threshold is higher than the second predetermined high temperature threshold. The MRAM cell can be used as a ternary content addressable memory (TCAM) and store up to three distinct state levels. The MRAM cell has a reduced size and can be made at low cost.
Abstract translation: MRAM单元包括具有自由磁化的软铁磁层和具有第一存储磁化的第一硬铁磁层之间的第一隧道势垒层。 第二隧道势垒层位于软铁磁层和第二硬铁磁层之间，并具有第二存储磁化。 第一存储磁化可以在第一高预定温度阈值自由定向，并且第二存储磁化可以在第二预定高温阈值自由定向。 第一高预定温度阈值高于第二预定高温阈值。 MRAM单元可用作三元内容可寻址存储器（TCAM），并存储多达三个不同的状态级别。 MRAM电池具有减小的尺寸并且可以以低成本制造。
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Patent Agency Ranking
16.发明申请MAGNETIC RANDOM ACCESS MEMORY CELL WITH A DUAL JUNCTION FOR TERNARY CONTENT ADDRESSABLE MEMORY APPLICATIONS 有权用于三次内部可寻址存储器应用的双连接的磁性随机存取存储器单元公开(公告)号：US20160322092A1
公开(公告)日：2016-11-03
申请号：US15190499
申请日：2016-06-23
Applicant: Crocus Technology SA
Inventor： Bertrand Cambou
CPC classification number: G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C15/02 , G11C15/046
Abstract: A MRAM cell including a first tunnel barrier layer between a soft ferromagnetic layer having a free magnetization and a first hard ferromagnetic layer having a first storage magnetization. A second tunnel barrier layer is between the soft ferromagnetic layer and a second hard ferromagnetic layer and has a second storage magnetization. The first storage magnetization is freely orientable at a first high predetermined temperature threshold and the second storage magnetization being freely orientable at a second predetermined high temperature threshold. The first high predetermined temperature threshold is higher than the second predetermined high temperature threshold. The MRAM cell can be used as a ternary content addressable memory (TCAM) and store up to three distinct state levels. The MRAM cell has a reduced size and can be made at low cost.
Abstract translation: MRAM单元包括具有自由磁化的软铁磁层和具有第一存储磁化的第一硬铁磁层之间的第一隧道势垒层。 第二隧道势垒层位于软铁磁层和第二硬铁磁层之间，并具有第二存储磁化。 第一存储磁化可以在第一高预定温度阈值自由定向，并且第二存储磁化可以在第二预定高温阈值自由定向。 第一高预定温度阈值高于第二预定高温阈值。 MRAM单元可用作三元内容可寻址存储器（TCAM），并存储多达三个不同的状态级别。 MRAM电池具有减小的尺寸并且可以以低成本制造。
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公开(公告)号：US09406870B2
公开(公告)日：2016-08-02
申请号：US14583983
申请日：2014-12-29
Inventor： Anthony J. Annunziata , Lucian Prejbeanu , Philip L. Trouilloud , Daniel C. Worledge
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1677 , G11C11/5607 , H01L43/08 , H01L43/12
Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A storage layer has an anisotropic axis, in which the storage layer is configured to store a state in off axis positions and on axis positions. The off axis positions are not aligned with the anisotropic axis. A tunnel barrier is disposed on top of the storage layer. A ferromagnetic sense layer is disposed on top of the tunnel barrier.
Abstract translation: 提供了一种用于热辅助磁阻随机存取存储器件（TAS-MRAM）的机构。 存储层具有各向异性轴，其中存储层被配置为在离轴位置和轴位置上存储状态。 离轴位置不与各向异性轴对齐。 隧道势垒设置在存储层的顶部。 铁磁感应层设置在隧道屏障的顶部。
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18.发明授权公开(公告)号：US09331268B2
公开(公告)日：2016-05-03
申请号：US14405918
申请日：2013-06-07
Applicant: CROCUS Technology SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Clarisse Ducruet , Lucien Lombard
CPC classification number: H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L43/02
Abstract: A thermally assisted switching MRAM element including a magnetic tunnel junction including a reference layer having a reference magnetization; a storage layer having a storage magnetization; a tunnel barrier layer included between the storage layer and the reference layer; and a storage antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and to free it at a high temperature threshold. The antiferromagnetic layer includes: at least one first antiferromagnetic layer having a first storage blocking temperature, and at least one second antiferromagnetic layer having a second storage blocking temperature; wherein the first storage blocking temperature is below 200° C. and the second storage blocking temperature is above 250° C. The MRAM element combines better data retention compared with known MRAM elements with low writing mode operating temperature.
Abstract translation: 一种热辅助切换MRAM元件，包括具有参考磁化的参考层的磁性隧道结; 具有存储磁化的存储层; 包括在所述存储层和所述参考层之间的隧道势垒层; 以及存储反铁磁层，其将存储层交换耦合，以便在低温阈值下固定存储磁化并将其在高温阈值下释放。 反铁磁层包括：具有第一存储阻挡温度的至少一个第一反铁磁层和具有第二存储阻挡温度的至少一个第二反铁磁层; 其中第一存储阻挡温度低于200℃，第二存储阻挡温度高于250℃。与具有低写入模式工作温度的已知MRAM元件相比，MRAM元件结合了更好的数据保留。
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公开(公告)号：US20150357014A1
公开(公告)日：2015-12-10
申请号：US14762264
申请日：2014-01-16
Applicant: CROCUS TECHNOLOGY SA
Inventor： Ioan Lucian Prejbeanu , Jerome Moritz , Bernard Dieny
CPC classification number: G11C11/161 , G11C11/16 , G11C11/1675 , G11C2211/5615 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.
Abstract translation: MRAM元件具有包括参考层的磁性隧道结，存储层，参考层和存储层之间的隧道势垒层，以及存储反铁磁层。 存储反铁磁层具有交换耦合存储层的存储磁化的第一功能和当通过磁性隧道结中的加热电流时加热磁性隧道结的第二功能。 MRAM元件具有更好的数据保留和低写入温度。
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20.发明申请SELF REFERENCE THERMALLY ASSISTED MRAM WITH LOW MOMENT FERROMAGNET STORAGE LAYER 审中-公开具有低MOMENT FERROMAGNET存储层的自参考热辅助MRAM公开(公告)号：US20150129946A1
公开(公告)日：2015-05-14
申请号：US14499523
申请日：2014-09-29
Inventor： Anthony J. Annunziata , Sebastien Bandiera , Lucien Lombard , Lucian Prejbeanu , Philip L. Trouilloud , Daniel C. Worledge
CPC classification number: H01L43/12 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing. A tunnel barrier is disposed adjacent to a ferromagnetic sense layer and a ferromagnetic storage layer, such that the tunnel barrier is sandwiched between the ferromagnetic sense layer and the ferromagnetic storage layer. An antiferromagnetic pinning layer is disposed adjacent to the ferromagnetic storage layer. The pinning layer pins a magnetic moment of the storage layer until heating is applied. The storage layer includes a non-magnetic material to reduce a storage layer magnetization as compared to not having the non-magnetic material. The sense layer includes the non-magnetic material to reduce a sense layer magnetization as compared to not having the non-magnetic material. A reduction in the storage layer magnetization and sense layer magnetization reduces the magnetostatic interaction between the storage layer and sense layer, resulting in less read/write power.
Abstract translation: 提供了一种用于读取和写入功率降低的热辅助磁阻随机存取存储器件（TAS-MRAM）的机构。 隧道势垒设置在铁磁感应层和铁磁存储层附近，使得隧道势垒夹在铁磁感测层和铁磁存储层之间。 反铁磁钉扎层邻近铁磁存储层设置。 钉扎层引导存储层的磁矩，直到加热。 与没有非磁性材料相比，存储层包括非磁性材料以减少存储层的磁化。 与没有非磁性材料相比，感应层包括非磁性材料以减小感测层的磁化强度。 存储层磁化强度和感测层磁化强度的降低降低了存储层和感测层之间的静磁相互作用，导致更少的读/写功率。
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