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    Method for preparing compound semiconductor substrate
    11.
    发明授权
    Method for preparing compound semiconductor substrate 有权
    化合物半导体衬底的制备方法

    公开(公告)号：US08158496B2

    公开(公告)日：2012-04-17

    申请号：US12878225

    申请日：2010-09-09

    Applicant: Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ji-Hoon Kim

    Inventor： Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ji-Hoon Kim

    IPC: H01L21/28

    CPC classification number: H01L21/0254 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02664

    Abstract: Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.

    Abstract translation: 提供了一种制备化合物半导体衬底的方法。 该方法包括在基板上涂覆多个球形球，在涂覆有球形球的基材上生长化合物半导体外延层，同时允许在球形球下方形成空隙，并且冷却其上化合物半导体外延层为 生长，使得衬底和化合物半导体外延层沿着空隙自我分离。 球形球处理可以减少错位几代。 此外，由于基板和化合物半导体外延层通过自分离分离，因此不需要激光剥离处理。

    NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF
    12.
    发明申请
    NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
    氮化物半导体基板及其制造方法

    公开(公告)号：US20110143525A1

    公开(公告)日：2011-06-16

    申请号：US13031425

    申请日：2011-02-21

    Applicant: Doo-Soo Kim ,  Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee

    Inventor： Doo-Soo Kim ,  Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee

    IPC: H01L21/365

    CPC classification number: H01L21/02658 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/0254

    Abstract: The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a nitride semiconductor film on the base substrate from a central portion of the base substrate towards a peripheral portion. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.

    Abstract translation: 氮化镓半导体衬底及其制造方法技术领域本发明涉及氮化镓衬底等氮化物半导体衬底及其制造方法。 本发明在基底基板的下表面上形成多个沟槽，该多个沟槽被配置为当从基底基板的中心部朝向周边部分生长氮化物半导体膜时吸收或减小施加更大的应力。 也就是说，本发明在基底基板的下表面上形成沟槽，使得间距变得较小，或者宽度或深度从基底基板的中心部朝向周边部分变大。

    METHOD FOR PREPARING COMPOUND SEMICONDUCTOR SUBSTRATE
    13.
    发明申请
    METHOD FOR PREPARING COMPOUND SEMICONDUCTOR SUBSTRATE 有权
    制备化合物半导体基板的方法

    公开(公告)号：US20100330784A1

    公开(公告)日：2010-12-30

    申请号：US12878225

    申请日：2010-09-09

    Applicant: Ho-Jun LEE ,  Yong-Jin KIM ,  Dong-Kun LEE ,  Doo-Soo KIM ,  Ji-Hoon KIM

    Inventor： Ho-Jun LEE ,  Yong-Jin KIM ,  Dong-Kun LEE ,  Doo-Soo KIM ,  Ji-Hoon KIM

    IPC: H01L21/20

    CPC classification number: H01L21/0254 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02664

    Abstract: Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.

    Abstract translation: 提供了一种制备化合物半导体衬底的方法。 该方法包括在基板上涂覆多个球形球，在涂覆有球形球的基材上生长化合物半导体外延层，同时允许在球形球下方形成空隙，并且冷却其上化合物半导体外延层为 生长，使得衬底和化合物半导体外延层沿着空隙自我分离。 球形球处理可以减少错位几代。 此外，由于基板和化合物半导体外延层通过自分离分离，因此不需要激光剥离处理。

    Method for manufacturing gallium nitride single crystalline substrate using self-split
    14.
    发明授权
    Method for manufacturing gallium nitride single crystalline substrate using self-split 有权
    使用自分割制造氮化镓单晶衬底的方法

    公开(公告)号：US07723217B2

    公开(公告)日：2010-05-25

    申请号：US12332198

    申请日：2008-12-10

    Applicant: Ho-Jun Lee ,  Doo-Soo Kim ,  Dong-Kun Lee ,  Yong-Jin Kim

    Inventor： Ho-Jun Lee ,  Doo-Soo Kim ,  Dong-Kun Lee ,  Yong-Jin Kim

    IPC: H01L21/20

    CPC classification number: C30B29/406 ,  C30B25/18

    Abstract: The present invention relates to a method for manufacturing a gallium nitride single crystalline substrate, including (a) growing a gallium nitride film on a flat base substrate made of a material having a smaller coefficient of thermal expansion than gallium nitride and cooling the gallium nitride film to bend convex upwards the base substrate and the gallium nitride film and create cracks in the gallium nitride film; (b) growing a gallium nitride single crystalline layer on the crack-created gallium nitride film located on the convex upward base substrate; and (c) cooling a resultant product having the grown gallium nitride single crystalline layer to make the convex upward resultant product flat or bend convex downwards the convex upward resultant product and at the same time to self-split the base substrate and the gallium nitride single crystalline layer from each other at the crack-created gallium nitride film interposed therebetween.

    Abstract translation: 本发明涉及一种用于制造氮化镓单晶衬底的方法，包括（a）在具有比氮化镓更小的热膨胀系数的材料制成的平坦基底衬底上生长氮化镓膜并冷却氮化镓膜 使基底和氮化镓膜向上弯曲并在氮化镓膜中产生裂纹; （b）在位于凸起的上方的基底基板上的裂纹产生的氮化镓膜上生长氮化镓单晶层; 和（c）冷却具有生长的氮化镓单晶层的所得产物，以使凸起的上升产物平坦或向上凸起向上凸起的产生产物，同时使基底和氮化镓单层自分裂 在其间形成的裂纹产生的氮化镓膜彼此相互结合。

    Method of manufacturing gallium nitride semiconductor
    15.
    发明授权
    Method of manufacturing gallium nitride semiconductor 有权
    制造氮化镓半导体的方法

    公开(公告)号：US07615470B2

    公开(公告)日：2009-11-10

    申请号：US11302957

    申请日：2005-12-13

    Applicant: Yong Jin Kim ,  Dong Kun Lee

    Inventor： Yong Jin Kim ,  Dong Kun Lee

    IPC: H01L21/322

    CPC classification number: C30B29/406 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02439 ,  H01L21/0254 ,  H01L21/02658

    Abstract: The present invention provides to a gallium nitride (GaN) semiconductor and a method of manufacturing the same, capable of reducing crystal defects caused by a difference in lattice parameters, and minimizing internal residual stress. In particular, since a high-quality GaN thin film is formed on a silicon wafer, manufacturing costs can be reduced by securing high-quality wafers with a large diameter at a low price, and applicability to a variety of devices and circuit can also be improved.

    Abstract translation: 本发明提供一种氮化镓（GaN）半导体及其制造方法，其能够减少由晶格参数的差异引起的晶体缺陷，并使内部残余应力最小化。 特别地，由于在硅晶片上形成高质量的GaN薄膜，所以可以通过以较低的价格确保大直径的高品质晶片来降低制造成本，并且适用于各种器件和电路也可以 改进。

    SEMICONDUCTOR DEVICE, LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    17.
    发明申请
    SEMICONDUCTOR DEVICE, LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件，发光器件及其制造方法

    公开(公告)号：US20110272703A1

    公开(公告)日：2011-11-10

    申请号：US13145790

    申请日：2009-12-09

    Applicant: Ho-Jun Lee ,  Dong-Kun Lee ,  Yong-Jin Kim ,  Doo-Soo Kim

    Inventor： Ho-Jun Lee ,  Dong-Kun Lee ,  Yong-Jin Kim ,  Doo-Soo Kim

    IPC: H01L29/12 ,  H01L21/20 ,  H01L33/02

    CPC classification number: H01L33/007 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/22

    Abstract: Disclosed are a semiconductor device, a light emitting device and a method for manufacturing the same. The semiconductor device includes a substrate, a plurality of rods disposed on the substrate, a plurality of particles disposed between the rods and on the substrate, and a first semiconductor layer disposed on the rods. The method for manufacturing the semiconductor device includes preparing a substrate, disposing a plurality of first particles on the substrate, and forming a plurality of rods by etching a portion of the substrate by using the first particles as an etch mask. The semiconductor device effectively reflects in an upward direction light by the above particles, so that light efficiency is improved. The rods are easily formed by using the first particles.

    Abstract translation: 公开了一种半导体器件，发光器件及其制造方法。 半导体器件包括衬底，设置在衬底上的多个棒，设置在杆之间和衬底上的多个颗粒以及设置在杆上的第一半导体层。 半导体器件的制造方法包括：准备基板，在基板上配置多个第一粒子，通过使用第一粒子作为蚀刻掩模，蚀刻基板的一部分来形成多个棒。 半导体器件通过上述粒子有效地向上方向反射光，从而提高光效率。 通过使用第一颗粒容易地形成棒。

    Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate
    18.
    发明授权
    Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate 有权
    制备氮化镓生长衬底的方法及其制备氮化镓衬底的方法

    公开(公告)号：US07708832B2

    公开(公告)日：2010-05-04

    申请号：US12177490

    申请日：2008-07-22

    Applicant: Yong-Jin Kim ,  Ji-Hoon Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee

    Inventor： Yong-Jin Kim ,  Ji-Hoon Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee

    IPC: C30B25/00 ,  C30B28/12 ,  H01L21/28

    CPC classification number: C30B29/406 ,  C30B25/02 ,  C30B25/18

    Abstract: Provided is a method for preparing a substrate for growing gallium nitride and a gallium nitride substrate. The method includes performing thermal cleaning on a surface of a silicon substrate, forming a silicon nitride (Si3N4) micro-mask on the surface of the silicon substrate in an in situ manner, and growing a gallium nitride layer through epitaxial lateral overgrowth (ELO) using an opening in the micro-mask. According to the method, by improving the typical ELO, it is possible to simplify the method for preparing the substrate for growing gallium nitride and the gallium nitride substrate and reduce process cost.

    Abstract translation: 提供一种制备用于生长氮化镓和氮化镓衬底的衬底的方法。 该方法包括在硅衬底的表面上进行热清洗，以原位方式在硅衬底的表面上形成氮化硅（Si 3 N 4）微掩模，并通过外延横向过度生长（ELO）生长氮化镓层， 在微面罩中使用开口。 根据该方法，通过改善典型的ELO，可以简化制备用于生长氮化镓和氮化镓衬底的衬底的方法，并降低工艺成本。

    METHOD FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALLINE SUBSTRATE USING SELF-SPLIT
    19.
    发明申请
    METHOD FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALLINE SUBSTRATE USING SELF-SPLIT 有权
    使用自分离法制造氮化镓单晶衬底的方法

    公开(公告)号：US20090155986A1

    公开(公告)日：2009-06-18

    申请号：US12332198

    申请日：2008-12-10

    Applicant: Ho-Jun Lee ,  Doo-Soo Kim ,  Dong-Kun Lee ,  Yong-Jin Kim

    Inventor： Ho-Jun Lee ,  Doo-Soo Kim ,  Dong-Kun Lee ,  Yong-Jin Kim

    IPC: H01L21/203

    CPC classification number: C30B29/406 ,  C30B25/18

    Abstract: The present invention relates to a method for manufacturing a gallium nitride single crystalline substrate, including (a) growing a gallium nitride film on a flat base substrate made of a material having a smaller coefficient of thermal expansion than gallium nitride and cooling the gallium nitride film to bend convex upwards the base substrate and the gallium nitride film and create cracks in the gallium nitride film; (b) growing a gallium nitride single crystalline layer on the crack-created gallium nitride film located on the convex upward base substrate; and (c) cooling a resultant product having the grown gallium nitride single crystalline layer to make the convex upward resultant product flat or bend convex downwards the convex upward resultant product and at the same time to self-split the base substrate and the gallium nitride single crystalline layer from each other at the crack-created gallium nitride film interposed therebetween.

    Abstract translation: 本发明涉及一种用于制造氮化镓单晶衬底的方法，包括（a）在具有比氮化镓更小的热膨胀系数的材料制成的平坦基底衬底上生长氮化镓膜并冷却氮化镓膜 使基底和氮化镓膜向上弯曲并在氮化镓膜中产生裂纹; （b）在位于凸起的上方的基底基板上的裂纹产生的氮化镓膜上生长氮化镓单晶层; 和（c）冷却具有生长的氮化镓单晶层的所得产物，以使凸起的上升产物平坦或向上凸起向上凸起的产生产物，同时使基底衬底和氮化镓单层自分裂 在其间形成的裂纹产生的氮化镓膜彼此相互结合。

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