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公开(公告)号:US20250030933A1
公开(公告)日:2025-01-23
申请号:US18223904
申请日:2023-07-19
Applicant: Elbit Systems of America, LLC
Inventor: John Barnett Hammond
IPC: H04N23/16 , H04N23/55 , H04N23/62 , H04N25/709
Abstract: A camera system includes a first imaging sensor, a second imaging sensor, and a controllable mirror system. The mirror system includes a mirror disposed at a fixed position to the first imaging sensor and the second imaging sensor, and a controller to control a signal applied to the mirror. The mirror system transmits a first portion of incident light through the mirror to the first imaging sensor, and reflects a second portion of the light to the second imaging sensor. A method of producing color images includes receiving incident light on a surface of the mirror, controlling the mirror to direct a first portion of the light to a first imaging sensor and a second portion of the light to a second imaging sensor, receiving first imaging sensor data from the first imaging sensor, and receiving second imaging sensor data from the second imaging sensor.
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公开(公告)号:US20240186129A1
公开(公告)日:2024-06-06
申请号:US18442690
申请日:2024-02-15
Applicant: Elbit Systems of America, LLC
Inventor: Stephen Carroll , William J. Baney , Cooper Gray Temple , Matthew Robert Curtis
IPC: H01J43/28 , C03C15/00 , C23C14/04 , C23C14/14 , C23C14/22 , C23C14/24 , C23C14/50 , H01J43/02 , H01J43/12
CPC classification number: H01J43/28 , C03C15/00 , C23C14/042 , C23C14/14 , C23C14/225 , C23C14/24 , C23C14/505 , H01J43/02 , H01J43/12
Abstract: A night vision system, a microchannel plate (MCP), and a planetary deposition system and methodology are provided for selectively depositing an electrode contact metal on one side of MCP channel openings. MCPs can be secured to a face of a platter that rotates about its central platter axis. The rotating platter can be tilted on a fixture surrounding an evaporative source of contact metal. A mask with a variable size mask opening is arranged between the rotating platter and the evaporative source. While the mask orbits around the evaporative source with the rotating platter, the mask does not rotate along its own axis as does the rotating platter. Depending on the opening of the non-rotating mask, and the tilt angle of the rotating platter, the respective circumferential distance around and the depth into the shaded first side of the channel opening is controlled.
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公开(公告)号:US11901151B2
公开(公告)日:2024-02-13
申请号:US17706112
申请日:2022-03-28
Applicant: Elbit Systems of America, LLC
Inventor: Stephen W. Carroll , Arlynn W. Smith , Todd A. Smith
CPC classification number: H01J31/507 , G02B23/12 , H01J9/125 , H01J2231/5016 , H01J2231/50026 , H01J2231/50063
Abstract: A night vision system along with an image intensifier tube having a microchannel plate and method of forming the microchannel plate are provided. The microchannel plate comprises a plurality of spaced channels extending through the microchannel plate, wherein each channel sidewall surface near the input face of the microchannel plate comprises a series of layers formed thereon. The input face of the microchannel plate, as well as the sidewall surfaces of each channel near the input surfaces, are configured with an electron backscatter layer arranged between a contact metal layer and a secondary electron booster layer. When formed partially into the channel openings near the input face, the electron backscatter layer and overlying secondary electron booster layer are configured circumferentially around the sidewall surfaces and extend radially inward toward a central axis of each channel.
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公开(公告)号:US11810747B2
公开(公告)日:2023-11-07
申请号:US17377065
申请日:2021-07-15
Applicant: Elbit Systems of America, LLC
Inventor: Dan W. Chilcott , Arlynn W. Smith , John B. Hammond
CPC classification number: H01J31/26 , H01J29/04 , H01J29/085
Abstract: An apparatus, system and method is provided for producing stacked wafers containing an array of image intensifiers that can be evacuated on a wafer scale. The wafer scale fabrication techniques, including bonding, evacuation, and compression sealing concurrently forms a plurality of EBCMOS imager anodes with design elements that enable high voltage operation with optional enhancement of additional gain via TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of an array of EBD die placed between a photocathode within a photocathode wafer and an imager anode that is preferably an EBCMOS imager anode bonded to or integrated within an interconnect die within an interconnect wafer.
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公开(公告)号:US11408765B2
公开(公告)日:2022-08-09
申请号:US15789061
申请日:2017-10-20
Applicant: ELBIT SYSTEMS OF AMERICA, LLC
Inventor: James Anton Harder , Michaelene Williams Sprague
Abstract: There is provided in a first form, a detector. The detector includes a photosensitive detector element; and a reflecting surface disposed about and proximal to the photosensitive detector element, wherein the reflecting surface is configured to reflect radiation impinging on the reflecting surface onto the photosensitive detector element; and wherein the reflecting surface is further configured to determine a field of regard greater than a predetermined field of view.
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公开(公告)号:US20210343514A1
公开(公告)日:2021-11-04
申请号:US17375734
申请日:2021-07-14
Applicant: Elbit Systems of America, LLC
Inventor: Mark Michalski , Ransom Hal Castleberry , John A. Balboni , Arlynn W. Smith , Raymond Leo Chabot
Abstract: A method of controlling the performance of a night vision device includes supplying, by a power supply, to a microchannel plate of a light intensifier tube, a control voltage that controls a gain of the microchannel plate, determining an amount of compensation to apply to the control voltage based on a change to the control voltage attributed to a change in temperature of an operating environment of the night vision device, adjusting the control voltage in accordance with the amount of compensation to obtain a compensated control voltage, and supplying, by the power supply, the compensated control voltage to the microchannel plate of the light intensifier tube. The method may further include determining whether the night vision device has been used for a predetermined amount of time, and only after that predetermined amount of time, is the method configured to supply the compensated control voltage.
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公开(公告)号:US20200312169A1
公开(公告)日:2020-10-01
申请号:US16371751
申请日:2019-04-01
Applicant: ELBIT SYSTEMS OF AMERICA, LLC
Inventor: John G. Williams
Abstract: A landing zone designation system is provided that includes a master and a slave landing strobes. A detector on an aircraft can detect master and slave optical signals, and a processor can be coupled to the detector to compute placement of the aircraft relative to the master and slave landing strobes. A method is provided for designating a landing zone for an aircraft. The method includes emitting first and second optical signals, where a determination is made whether the aircraft is to land at a first landing zone or a second landing zone depending on a difference between the first optical signal and the second optical signal. A distance to landing within the determined first landing zone or the second landing zone can also be determined.
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公开(公告)号:US20200307828A1
公开(公告)日:2020-10-01
申请号:US16371840
申请日:2019-04-01
Applicant: ELBIT SYSTEMS OF AMERICA, LLC
Inventor: John G. Williams
IPC: B64F1/20
Abstract: A landing strobe is provided having an optical emitter configured to emit an optical signal. An input device can be coupled to the optical emitter for setting the optical signal to a signature strobe output unique to the landing strobe. A landing zone designation system is also provided having a landing strobe configured to emit a signature strobe output unique to the landing strobe. An aircraft spaced from the landing strobe can include a detector for optically receiving the signature strobe output to determine the landing zone is proper to land the aircraft if the signature strobe output matches an expected signature strobe output.
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公开(公告)号:US10766638B1
公开(公告)日:2020-09-08
申请号:US16371697
申请日:2019-04-01
Applicant: ELBIT SYSTEMS OF AMERICA, LLC
Inventor: John G. Williams , Richard P. Linnehan
Abstract: A landing strobe is provided that comprises a vane extending from the landing strobe, and an actuator coupled to the vane. The actuator can be configured to move the vane from a first position to a second position upon impact of the landing strobe. The landing strobe can also comprise an optical emitter configured to emit an adjustable radiation pattern extending radially around a central axis that is substantially vertical when the van is moved to the second position. A landing strobe system is also provided and comprises a landing strobe configured to be released from an aircraft arranged over a landing zone. The vane is configured to extend at an upward angle outward from the landing strobe when released from the aircraft. The vane is further configured to extend at a downward angle outward from the landing strobe when the landing strobe contacts the landing zone.
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公开(公告)号:US20200156932A1
公开(公告)日:2020-05-21
申请号:US16773042
申请日:2020-01-27
Applicant: ELBIT SYSTEMS OF AMERICA, LLC
Inventor: Arlynn W. SMITH , Dan CHILCOTT
IPC: B81C1/00 , C03C27/04 , B81B7/00 , B32B37/18 , B32B37/12 , B32B17/06 , B32B9/04 , B32B7/12 , B32B3/30 , G02B23/12 , B81C3/00
Abstract: A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.
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