Method of manufacturing photodefined integral capacitor with self-aligned dielectric and electrodes
    11.
    发明授权
    Method of manufacturing photodefined integral capacitor with self-aligned dielectric and electrodes 失效
    制造具有自对准电介质和电极的光电积分电容器的方法

    公开(公告)号:US06349456B1

    公开(公告)日:2002-02-26

    申请号:US09224338

    申请日:1998-12-31

    Abstract: A method for manufacturing a microelectronic assembly to have aligned conductive regions and dielectric regions with desirable processing and dimensional characteristics. The invention is particularly useful for producing integral capacitors, with the desired processing and dimensional characteristics achieved with the invention yielding predictable electrical characteristics for the capacitors. The method generally entails providing a substrate with a first conductive layer, forming a dielectric layer on the first conductive layer, and then forming a second conductive layer on the dielectric layer. A first region of the second conductive layer is then removed to expose a first region of the dielectric layer, which in turn is removed to expose a first region of the first conductive layer that is also removed. From this process, the first regions of the conductive and dielectric layers are each removed by using the overlying layer or layers as a mask, so that the remaining second regions of these layers are coextensive.

    Abstract translation: 一种用于制造具有对准的导电区域和具有期望的处理和尺寸特性的电介质区域的微电子组件的方法。 本发明对于制造集成电容器特别有用,具有通过本发明实现的期望的处理和尺寸特性,为电容器产生可预测的电特性。 该方法通常需要提供具有第一导电层的衬底,在第一导电层上形成电介质层,然后在电介质层上形成第二导电层。 然后去除第二导电层的第一区域以暴露介电层的第一区域,该第一区域又被去除以暴露也被去除的第一导电层的第一区域。 从该工艺中,通过使用上覆层作为掩模,导电和介电层的第一区域各自被去除,使得这些层的剩余的第二区域是共延伸的。

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