Abstract:
A method of preparing components for use in a vacuum chamber of a lithographic apparatus is disclosed. The method includes coating the component with a non-metallic material. The method may further include treating the coating so as to harden the coating. Preferably, the coating material is a hydrogen silsesquioxane (HSQ), which may be applied via spraying, brushing, or spinning and can be treated by heating or by irradiation with an electron beam. The resulting components strongly reduce outgassing of water and hydrocarbons when subjected to a vacuum environment.
Abstract:
A collector assembly with a radiation collector, a cover plate and a support member connecting the radiation collector to the cover plate are provided. The cover plate is designed to cover an opening in a collector chamber. The collector chamber opening may be large enough to pass the radiation collector and the support member. The removed radiation collector can be cleaned with different cleaning procedures, which may be performed in a cleaning device. Such cleaning device may for example consist of the following: a circumferential hull designed to provide an enclosure volume for circumferentially enclosing at least the radiation collector; an inlet configured to provide at least one of a cleaning gas and a cleaning liquid to the enclosure volume to clean at least said radiation collector; and an outlet configured to remove said at least one of said cleaning gas and said cleaning liquid from the enclosure volume.
Abstract:
A collector assembly with a radiation collector, a cover plate and a support member connecting the radiation collector to the cover plate are provided. The cover plate is designed to cover an opening in a collector chamber. The collector chamber opening may be large enough to pass the radiation collector and the support member. The removed radiation collector can be cleaned with different cleaning procedures, which may be performed in a cleaning device. Such cleaning device may for example consist of the following: a circumferential hull designed to provide an enclosure volume for circumferentially enclosing at least the radiation collector; an inlet configured to provide at least one of a cleaning gas and a cleaning liquid to the enclosure volume to clean at least said radiation collector; and an outlet configured to remove said at least one of said cleaning gas and said cleaning liquid from the enclosure volume.
Abstract:
A method of preparing components for use in a vacuum chamber of a lithographic apparatus is disclosed. The method includes coating the component with a non-metallic material. The method may further include treating the coating so as to harden the coating. Preferably, the coating material is a hydrogen silsesquioxane (HSQ), which may be applied via spraying, brushing, or spinning and can be treated by heating or by irradiation with an electron beam. The resulting components strongly reduce outgassing of water and hydrocarbons when subjected to a vacuum environment.
Abstract:
A collector is disclosed that is constructed to receive radiation from a radiation source and to transmit radiation to an illumination system, the collector comprising a reflective element which is internally provided with a fluid channel.
Abstract:
The invention provides a cleaning process for the removal of deposition on an element of a lithographic apparatus. The method includes (ex situ) treating the element with an alkaline cleaning liquid. In this way, Sn may be removed from a contaminant barrier or a collector mirror. Especially beneficial is the application of a voltages to the element to be cleaned and/or by using complexing agents for improving the dissolution of Sn in the cleaning liquid.
Abstract:
A collector is disclosed that is constructed to receive radiation from a radiation source and to transmit radiation to an illumination system, the collector comprising a reflective element which is internally provided with a fluid channel.
Abstract:
A lithographic apparatus includes an illumination system for providing a projection beam of radiation, a support structure for supporting patterning structure for imparting a pattern to the projection beam, a substrate table for holding a wafer and a projection system for projecting the patterned beam onto a target portion of the wafer. In order to permit control of the radiation dose at the wafer so that the throughput of wafers can be optimised, a variable attenuator is provided to vary the intensity of the projection beam while not changing the position of the beam. The variable attenuator includes two parallel mirrors positioned such that an input beam of radiation is incident on a first of the mirrors by which it is reflected towards a second of the mirrors by which the beam is reflected to produce an output beam of radiation of required intensity for input to the illumination system, and a tilting mechanism for tilting the mirrors such that the mirrors remain parallel to one another and the angles of incidence of the beams on the mirrors are changed so as to vary the intensity of the output beam. This allows the intensity of the projection beam to be varied continuously without changing the position of the beam, whether the input beam is converging, diverging or parallel.
Abstract:
A lithographic apparatus includes an illumination system for providing a beam of radiation, a support structure for supporting a patterning device, the patterning device serving to impart the beam with a pattern in its cross-section. The apparatus further includes a substrate table for holding a substrate, a projection system for projecting the patterned beam onto a target portion of the substrate, and a collector which is arranged for transmitting radiation, received from a first radiation source, to the illumination system. The apparatus includes at least a heater for heating the collector when the collector receives substantially no radiation from the first radiation source. Further aspects of the invention relate to a device manufacturing method as well as a device manufactured thereby.
Abstract:
A method using a lithographic apparatus comprising a reflective integrator is claimed that optimizes the exposure of features on a target area of a substrate, when the features make an angle between 5 and 85 degrees with respect to the target area. The method comprises rotating the reflective integrator with respect to the target area providing a rotated mirror-symmetric pupil shape, which is implemented by either rotating the substrate or rotating the reflective integrator with respect to the machine or the patterning device. The patterning device comprises a maximum usable area and a patterned area which are rotated with respect to each other if a rotated substrate is employed. The method can be used in single exposure or double exposure mode. A further advantage of the method of using a rotated wafer is that it can be used for exposing features on a substrate in any direction even when the projection system of the lithographic apparatus shows a preferred polarization direction.