公开(公告)号：US20110175674A1

公开(公告)日：2011-07-21

申请号：US13005890

申请日：2011-01-13

Applicant: Hisae Shimizu ,  Katsumi Abe ,  Ryo Hayashi

Inventor： Hisae Shimizu ,  Katsumi Abe ,  Ryo Hayashi

IPC: G05F1/10 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78633

Abstract: Disclosed is a method of driving a transistor including a semiconductor layer, a first insulating layer, a second insulating layer, a first conductive layer, and a second conductive layer such that the semiconductor layer is disposed between the first and second insulating layers, one surface of the first insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the first conductive layer, one surface of the second insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the second conductive layer. The method includes applying a voltage VBG that satisfies the relation of VBG≦VON1×C1/(C1+C2) to the second conductive layer.

Abstract translation: 公开了一种驱动包括半导体层，第一绝缘层，第二绝缘层，第一导电层和第二导电层的晶体管的方法，使得半导体层设置在第一和第二绝缘层之间，一个表面 与第一导电层接触的与第一导电层接触的与第一绝缘层相反的第一绝缘层的第一绝缘层与第二导电层接触的第二绝缘层与与半导体层接触的另一表面相对的一个表面。 该方法包括将第二导电层施加满足VBG＆lt; N1E，VON1×C1 /（C1 + C2）的关系的电压VBG。

公开(公告)号：US07923723B2

公开(公告)日：2011-04-12

申请号：US12281783

申请日：2007-02-23

Applicant: Ryo Hayashi ,  Katsumi Abe ,  Masafumi Sano

Inventor： Ryo Hayashi ,  Katsumi Abe ,  Masafumi Sano

IPC: H01L29/786 ,  H01L31/0376 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/28202 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66969

Abstract: The thin-film transistor of the present invention has at least a semiconductor layer including: on a substrate, a source electrode, a drain electrode, and a channel region; a gate insulating film; and a gate electrode, wherein the semiconductor layer is an oxide semiconductor layer, and wherein the gate insulating film is amorphous silicon including at least O and N, and the gate insulating film has a distribution of an oxygen concentration in a thickness direction so that the oxygen concentration is high in the side of an interface with an oxide semiconductor layer and the oxygen concentration decreases toward the side of the gate electrode.

Abstract translation: 本发明的薄膜晶体管至少具有半导体层，该半导体层包括：基板，源电极，漏电极和沟道区; 栅极绝缘膜; 以及栅电极，其中所述半导体层是氧化物半导体层，并且其中所述栅极绝缘膜是至少包括至少O和N的非晶硅，并且所述栅极绝缘膜具有在厚度方向上的氧浓度的分布，使得 在与氧化物半导体层的界面侧的氧浓度高，并且氧浓度朝向栅电极侧减小。

公开(公告)号：US20100085081A1

公开(公告)日：2010-04-08

申请号：US12597211

申请日：2008-05-15

Applicant: Masato Ofuji ,  Katsumi Abe ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi

Inventor： Masato Ofuji ,  Katsumi Abe ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi

IPC: H03K19/20 ,  H03K19/0944 ,  H01L21/8254 ,  H01L21/8236 ,  H01L21/42

CPC classification number: H01L29/7869 ,  H01L27/1233

Abstract: To provide an enhancement-depletion (E/D) inverter which can be easily manufactured, in the present invention, a method of manufacturing an inverter which is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, the inverter being the E/D inverter having plural thin film transistors, is characterized by comprising the steps of: forming a first transistor and a second transistor, the thicknesses of the channel layers of the first and second transistors being mutually different; and executing heat treatment to at least one of the channel layers of the first and second transistors.

Abstract translation: 为了提供易于制造的增强耗尽（E / D）逆变器，在本发明中，制造由氧化物半导体构成的逆变器的制造方法，其中沟道层包括选自In， Ga和Zn形成在同一衬底上，所述逆变器是具有多个薄膜晶体管的E / D逆变器，其特征在于包括以下步骤：形成第一晶体管和第二晶体管，第一和第二晶体管的沟道层的厚度 第二晶体管是相互不同的; 以及对所述第一和第二晶体管的至少一个沟道层执行热处理。

公开(公告)号：US20090311543A1

公开(公告)日：2009-12-17

申请号：US12226042

申请日：2007-04-12

Applicant: Katsumi Abe ,  Kiyofumi Fukasawa

Inventor： Katsumi Abe ,  Kiyofumi Fukasawa

IPC: B32B15/08

CPC classification number: B32B15/06 ,  B32B25/14 ,  C08F220/00 ,  C08G59/621 ,  C08J5/128 ,  C08J2333/06 ,  C08J2461/00 ,  C08J2463/00 ,  C08L33/00 ,  C08L61/06 ,  C08L71/00 ,  C08L2666/16 ,  C08L2666/22 ,  C09J163/00 ,  Y10T428/28 ,  Y10T428/2804 ,  Y10T428/2852 ,  Y10T428/31678

Abstract: An acrylic rubber-metal composite, which comprises a metal, (a) an undercoat adhesive layer comprising phenol resin and epoxy resin, (b) an overcoat adhesive layer comprising phenol resin, halogenated polymer, and a metal oxide, and (c) an acrylic rubber layer, the layers (a), (b) and (c) being successively laid on the surface of the metal, having not only a distinguished initial adhesiveness, but also a good water resistance, where the acrylic rubber is bonded to the metal without surface treatment of the metal such as a chemical treatment, e.g. zinc phosphate treatment, etc., a blast treatment, or a primer treatment.

Abstract translation: 一种丙烯酸橡胶 - 金属复合材料，其包含金属，（a）包含酚醛树脂和环氧树脂的底涂层粘合剂层，（b）包含酚醛树脂，卤化聚合物和金属氧化物的外涂层粘合剂层，和（c） 丙烯酸橡胶层，层（a），（b）和（c）依次铺设在金属表面上，不仅具有突出的初始粘合性，而且具有良好的耐水性，其中丙烯酸橡胶与 没有金属表面处理的金属例如化学处理，例如 磷酸锌处理等，喷丸处理或底漆处理。

公开(公告)号：US20090231241A1

公开(公告)日：2009-09-17

申请号：US12294598

申请日：2007-08-08

Applicant: Katsumi Abe

Inventor： Katsumi Abe

IPC: G09G3/30

CPC classification number: G09G3/3241 ,  G09G3/2011 ,  G09G2300/0417 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2300/0866 ,  G09G2310/0251 ,  G09G2310/061 ,  G09G2320/0223 ,  G09G2320/0233 ,  G09G2320/0238 ,  G09G2330/025

Abstract: A light emitting display device using a drive circuit formed of only unipolar thin film transistors, which suppresses effects of characteristic shifts of transistors, and is applicable to large, high-resolution light emitting displays. The device includes a pixel having an organic EL device (LED) and a drive circuit thereof. In a current writing period, the drive circuit sets TFT3, TFT4 and TFT5 ON and sets a ground line and one end of LED to the same voltage through TFT3. A current from a data line is supplied to transistors L-TFT and D-TFT forming a current mirror circuit through TFT4 and TFT5, and a voltage between gate and source terminals of L-TFT and D-TFT is retained in a capacitor. During a LED driving period, TFT3, TFT4 and TFT5 are interrupted, and a current flowing between the source and drain of D-TFT is supplied to LED according to the retaining voltage.

Abstract translation: 一种使用仅由单极薄膜晶体管形成的驱动电路的发光显示装置，其抑制晶体管的特性偏移的影响，并且可应用于大的高分辨率发光显示器。 该器件包括具有有机EL器件（LED）的像素及其驱动电路。 在当前的写入周期中，驱动电路将TFT3，TFT4和TFT5置为ON，并将LED的地线和一端通过TFT3设置为相同的电压。 来自数据线的电流被提供给通过TFT4和TFT5形成电流镜电路的晶体管L-TFT和D-TFT，并且L-TFT和D-TFT的栅极和源极端子之间的电压被保留在电容器中。 在LED驱动期间，中断TFT3，TFT4和TFT5，并且根据保持电压将在D-TFT的源极和漏极之间流动的电流提供给LED。

公开(公告)号：US20090104552A1

公开(公告)日：2009-04-23

申请号：US12066179

申请日：2006-09-08

Applicant: Katsumi Abe ,  Makoto Koike ,  Atsushi Takesue

Inventor： Katsumi Abe ,  Makoto Koike ,  Atsushi Takesue

IPC: G03G5/06 ,  G03G15/02

CPC classification number: G03G5/0614 ,  G03G5/0517 ,  G03G5/0605 ,  G03G5/0616

Abstract: An object of the present invention is to provide an electrophotographic photoreceptor which is not impaired in electrophotographic properties such as charge potential and residual potential and which is also excellent in repetition stability. The invention relates to an electrophotographic photoreceptor including a conductive support having thereon a photosensitive layer containing a zirconium compound represented by the following general formula (1): and one or more charge transport agents having an arylamino group in its molecule.

Abstract translation: 本发明的一个目的是提供一种在电荷特性如电荷电位和残余电位方面不受损害并且重复稳定性也优异的电子照相感光体。 本发明涉及一种电子照相感光体，其包含导电性支持体，其上具有含有下述通式（1）表示的锆化合物的感光层和分子中具有芳基氨基的一种或多种电荷输送剂。

公开(公告)号：US20090102829A1

公开(公告)日：2009-04-23

申请号：US11683872

申请日：2007-03-08

Applicant: Katsumi Abe ,  Hideya Kumomi ,  Ryo Hayashi ,  Masafumi Sano

Inventor： Katsumi Abe ,  Hideya Kumomi ,  Ryo Hayashi ,  Masafumi Sano

IPC: G06F3/038 ,  G09G3/20

CPC classification number: G09G3/325 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/043

Abstract: A pixel circuit and an image display apparatus are provided making use of a hysteresis characteristics of a transistor for driving a display element. The pixel circuit comprises: a transistor providing both different first and second relations between a gate voltage value and a drain current value at a transition from off state to an on state, and from the on state transits to the off state respectively; a display element supplied as a drive current with a current controlled by the transistor; and a capacitor element connected to a gate electrode of the transistor. One of the first and second relations is utilized during a first period for setting the drive current to be supplied to the display element. And, the other of the first and second relations is utilized during a second period for supplying the drive current to the display element to effect light emission.

Abstract translation: 使用用于驱动显示元件的晶体管的滞后特性来提供像素电路和图像显示装置。 像素电路包括：晶体管，在从断开状态转换到导通状态时，分别在栅极电压值和漏极电流值之间分别具有不同的第一和第二关系，以及从导通状态转移到断开状态。 以由晶体管控制的电流作为驱动电流提供的显示元件; 以及连接到晶体管的栅电极的电容器元件。 第一和第二关系中的一个在第一时段期间被利用来设定要提供给显示元件的驱动电流。 并且，在第二时段期间利用第一和第二关系中的另一个来向显示元件提供驱动电流以实现发光。

公开(公告)号：US20080225023A1

公开(公告)日：2008-09-18

申请号：US12028588

申请日：2008-02-08

Applicant: Hisae Shimizu ,  Katsumi Abe

Inventor： Hisae Shimizu ,  Katsumi Abe

IPC: G06F3/038

CPC classification number: G09G3/3233 ,  G09G3/3291 ,  G09G2300/0417 ,  G09G2300/043 ,  G09G2300/0819 ,  G09G2300/0861 ,  G09G2310/0262 ,  G09G2320/043

Abstract: A drive circuit for a light emitting display apparatus including a pixel circuit having a light emitting device for emitting a light having brightness determined based on supplied current and a drive transistor for supplying the current to the light emitting device, comprises a threshold value correction circuit converting a second signal including a threshold voltage of the drive transistor and a data voltage, the second signal being output from the drive transistor when a first signal including the data voltage is input into the control electrode of the drive transistor, into a third signal including the threshold voltage of an inverted polarity and the data voltage or a voltage corresponding to the data voltage, to output the converted third signal to the pixel circuit. The pixel circuit includes a switch for supplying the third signal to the control electrode of the drive transistor.

Abstract translation: 一种用于发光显示装置的驱动电路，包括具有发光装置的像素电路，所述发光装置用于发射基于所提供的电流确定的亮度的光和用于向所述发光装置提供电流的驱动晶体管，所述驱动电路包括阈值校正电路转换 包括驱动晶体管的阈值电压的第二信号和数据电压，当包括数据电压的第一信号被输入到驱动晶体管的控制电极时，第二信号从驱动晶体管输出到第三信号，第三信号包括 反转极性的阈值电压和数据电压或对应于数据电压的电压，以将转换的第三信号输出到像素电路。 像素电路包括用于将第三信号提供给驱动晶体管的控制电极的开关。

公开(公告)号：US20080076050A1

公开(公告)日：2008-03-27

申请号：US11597657

申请日：2005-05-24

Applicant: Katsumi Abe ,  Atsushi Takesue ,  Shinya Nagai ,  Mitsutoshi Anzai

Inventor： Katsumi Abe ,  Atsushi Takesue ,  Shinya Nagai ,  Mitsutoshi Anzai

IPC: G03G15/02 ,  C07C211/54 ,  C07C211/60

CPC classification number: C07C217/84 ,  C07C211/60 ,  C07C2602/08 ,  G03G5/0605 ,  G03G5/0607 ,  G03G5/0614

Abstract: The present invention provides p-terphenyl compounds represented by the following general formula (1) and (2): and an electrophotographic photoconductor containing the compound. According to the invention, a charge transporting agent having improved solubility in an organic solvent and an electrophotographic photoconductor excellent in drift mobility and having high sensitivity and high durability are provided.

Abstract translation: 本发明提供由以下通式（1）和（2）表示的对三联苯化合物：和含有该化合物的电子照相感光体。 根据本发明，提供了在有机溶剂中具有改善的溶解度的电荷输送剂和漂移迁移率优异并且具有高灵敏度和高耐久性的电子照相感光体。

公开(公告)号：US07256756B2

公开(公告)日：2007-08-14

申请号：US10230935

申请日：2002-08-29

Applicant: Katsumi Abe

Inventor： Katsumi Abe

IPC: G09G3/30 ,  G09G5/00

CPC classification number: G09G3/3283 ,  G09G3/3241 ,  G09G3/325 ,  G09G2300/0842 ,  G09G2310/0248 ,  G09G2310/027 ,  G09G2310/0297 ,  G09G2320/0233

Abstract: In a D/I conversion section of the semiconductor device for driving a light emission display device, a precharge circuit is provided at the rear of each 1-output D/I conversion section. A precharge signal PC is input into the precharge circuit. The D/I conversion section has two output blocks internally thereof, and a role for storing and outputting current is changed every frame to enable securing a period for driving a pixel longer. Further, at the time of driving, in the precharge circuit, current driving is carried out after a voltage corresponding to output current has been applied to the pixel, and therefore, the pixel can be driven at high speed. Thereby, output current of high accuracy can be supplied to digital image data to be input, and even where an output current value is low, the current load device can be driven at high speed.