公开(公告)号：US20240072017A1

公开(公告)日：2024-02-29

申请号：US18450605

申请日：2023-08-16

Applicant: Lextar Electronics Corporation

Inventor： Ching-Yi CHEN ,  Wei-An CHEN

IPC: H01L25/075

CPC classification number: H01L25/0753

Abstract: A pixel unit includes a red LED chip, a green LED chip, and a blue LED chip. Each of these chips has an optical density concentration zone and a reference line passing through the geometric center of the top-view shape of the chip. The optical density concentration zone of each of these chips is deviated to one side of the respective reference line of the chip. The reference lines of the chips are parallel to each other. The optical density concentration zones of the chips are all deviated to the same side of the respective reference line.

公开(公告)号：US20230299056A1

公开(公告)日：2023-09-21

申请号：US18185531

申请日：2023-03-17

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Te-Chung WANG ,  Guo-Yi SHIU

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/10 ,  H01L25/16 ,  H01L27/12

CPC classification number: H01L25/0753 ,  H01L33/62 ,  H01L33/10 ,  H01L25/167 ,  H01L27/124

Abstract: A light-emitting diode device including a pixel structure including first, second and third light-emitting diode chips, a passivation layer, and first, second, third and fourth circuit layers is provided. The first and second light-emitting diode chips are positioned on a top surface opposite to a light-emitting surface of the third light-emitting diode chip. First and second vertical projections of the first and second light-emitting diode chips on the top surface do not overlap each other. First and second bonding surfaces of the first and second circuit layers corresponding to openings in the passivation layer are positioned to overlap the first vertical projection and are separated from the second vertical projection. Third and fourth bonding surfaces of the third and fourth circuit layers that correspond to openings in the passivation layer are positioned to overlap the second vertical projection and are separated from the first vertical projection.

公开(公告)号：US20230261165A1

公开(公告)日：2023-08-17

申请号：US18303578

申请日：2023-04-20

Applicant: Lextar Electronics Corporation

Inventor： Chih-Hao LIN ,  Jo-Hsiang CHEN ,  Shih-Lun LAI ,  Min-Che TSAI ,  Jian-Chin LIANG

IPC: H01L33/62 ,  H01L33/58 ,  H01L33/00

CPC classification number: H01L33/62 ,  H01L33/58 ,  H01L33/0095 ,  H01L2933/0066 ,  H01L2933/0058

Abstract: The light emitting diode packaging structure includes a flexible substrate, a first adhesive layer, micro light emitting elements, a conductive pad, a redistribution layer, and an electrode pad. The first adhesive layer is disposed on the flexible substrate. The micro light emitting elements are disposed on the first adhesive layer and have a first surface facing to the first adhesive layer and an opposing second surface. The micro light emitting elements include a red micro light emitting element, a blue micro light emitting element, and a green micro light emitting element. The conductive pad is disposed on the second surface of the micro light emitting element. The redistribution layer covers the micro light emitting elements and the conductive pad. The electrode pad is disposed on the redistribution layer and is electrically connected to the circuit layer. A thickness of the flexible substrate is less than 100 um.

公开(公告)号：US20230207744A1

公开(公告)日：2023-06-29

申请号：US18172283

申请日：2023-02-21

Applicant: Lextar Electronics Corporation

Inventor： Te-Chung WANG ,  Shiou-Yi KUO

IPC: H01L33/48 ,  H01L33/52 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L33/486 ,  H01L33/52 ,  H01L29/0665 ,  H01L21/0228 ,  H01L2924/12041

Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

公开(公告)号：US11670749B2

公开(公告)日：2023-06-06

申请号：US17653462

申请日：2022-03-03

Applicant: Lextar Electronics Corporation

Inventor： Chih-Hao Lin ,  Jo-Hsiang Chen ,  Shih-Lun Lai ,  Min-Che Tsai ,  Jian-Chin Liang

IPC: H01L33/62 ,  H01L33/58 ,  H01L33/00

CPC classification number: H01L33/62 ,  H01L33/0095 ,  H01L33/58 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A method for manufacturing a light emitting diode packaging structure includes the operations below. A flexible substrate having a first surface and a second surface is provided. A carrier substrate is formed on the first surface. An adhesive layer is formed on the second surface. A micro light emitting element is formed on the adhesive layer. The micro light emitting element has a conductive pad thereon opposite to the adhesive layer. A redistribution layer is formed and covers the micro light emitting element and the adhesive layer, wherein the redistribution layer includes a circuit layer electrically connecting to the conductive pad and an insulating layer covering the circuit layer. An electrode pad is formed on the redistribution layer and electrically connected to the circuit layer, wherein a total thickness of the flexible substrate, the adhesive layer, the redistribution layer, and the electrode pad is less than 200 um.

公开(公告)号：US11652193B2

公开(公告)日：2023-05-16

申请号：US17083329

申请日：2020-10-29

Applicant: Lextar Electronics Corporation

Inventor： Yi-Ting Tsai ,  Hung-Chia Wang ,  Chia-Chun Hsieh ,  Hung-Chun Tong ,  Yu-Chun Lee ,  Tzong-Liang Tsai

IPC: H01L33/50

CPC classification number: H01L33/502 ,  H01L33/508

Abstract: A light-emitting diode device is provided. First and second green conversion materials are respectively configured to convert a blue light emitted from a blue light-emitting diode to generate a first green light with a first wavelength range and a first wavelength FWHM, and a second green light with a second wavelength range and a second wavelength FWHM. The second wavelength FWHM is smaller than the first wavelength FWHM. A lower bound of the first wavelength range is smaller than a lower bound of the second wavelength range, and an upper bound of the second wavelength range is greater than an upper bound of the first wavelength range. An output light emitted from the light-emitting diode device has a spectral characteristic of less than 50% of TÜV Rheinland and more than 90% of wide color gamut.

公开(公告)号：US20230131636A1

公开(公告)日：2023-04-27

申请号：US17970487

申请日：2022-10-20

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Guo-Yi SHIU ,  Chih-Hao LIN ,  Min-Che TSAI ,  Jian-Chin LIANG

IPC: H01L25/16 ,  H01L33/54 ,  H01L33/62 ,  H01L33/60

Abstract: Embodiments provide a micro light-emitting diode package structure and a method for forming the same. The micro light-emitting diode package structure includes a redistribution layer, a control device, micro light-emitting diodes, and a flexible material layer. The control device and the micro light-emitting diodes are disposed on and electrically connected to the redistribution layer. The flexible material layer covers the control device and the micro light-emitting diodes, wherein the micro light-emitting diodes are in contact with the flexible material layer.

公开(公告)号：US20230070973A1

公开(公告)日：2023-03-09

申请号：US17939799

申请日：2022-09-07

Applicant: Lextar Electronics Corporation

Inventor： Chih-Hao LIN ,  Jo-Hsiang CHEN ,  Wei-Yuan MA ,  Hui-Ru WU ,  Min-Che TSAI ,  Shiou-Yi KUO ,  Jian-Chin LIANG

IPC: H01L33/46 ,  H01L33/62 ,  H01L33/00

Abstract: A package structure, a display device, and manufacturing methods thereof are provided. A package structure includes a conductive element, a first dielectric layer, a redistribution layer, a second dielectric layer, a light-shielding layer, a conductive layer, and a light-emitting diode unit. The first dielectric layer is disposed on the conductive element. The redistribution layer is disposed on the first dielectric layer. The redistribution layer is electrically connected to the conductive element. The second dielectric layer is disposed on the first dielectric layer. The light-shielding layer is disposed on the second dielectric layer. The conductive layer is disposed on the redistribution layer and includes a first conductive portion with a light reflectivity of less than 30%. The light-emitting diode unit is disposed on the conductive layer.

公开(公告)号：US11570339B2

公开(公告)日：2023-01-31

申请号：US17037738

申请日：2020-09-30

Applicant: Lextar Electronics Corporation

Inventor： Kai-Hung Cheng ,  Fu-Han Ho

IPC: H01L27/146 ,  H01L31/18 ,  H01L31/0203 ,  H01L31/0232 ,  H04N5/225

Abstract: According to the disclosure, a photodiode package structure is provided. The photodiode package structure includes a substrate, a photodiode chip on the substrate, a plurality of shutters above the photodiode chip, and a seal member covering the substrate and the photodiode chip, in which the shutters are embedded in the seal member.

公开(公告)号：US11552222B2

公开(公告)日：2023-01-10

申请号：US16879787

申请日：2020-05-21

Applicant: Lextar Electronics Corporation

Inventor： Chih-Hao Lin ,  Hui-Ru Wu ,  Jo-Hsiang Chen ,  Jian-Chin Liang ,  Ai-Sen Liu

IPC: H01L33/50 ,  H01L33/60 ,  H01L25/075

Abstract: The display device includes a substrate, a patterned wall, the first, second, third sub-pixels, and an optical layer. The patterned wall is disposed on the substrate and has a plurality of openings. The first sub-pixel is disposed in one of the openings and includes a light-emitting element and a wavelength conversion layer. The second sub-pixel is disposed in one of the openings and includes a light-emitting element and a wavelength conversion layer. The third sub-pixel is disposed in one of the openings and includes a light-emitting element and a wavelength conversion layer, wherein a first distance between a top surface of the light-emitting element and a top surface of the patterned wall is about 10 um to about 100 um. The optical layer is disposed on the patterned wall and in direct contact with at least one of the first sub-pixel, the second sub-pixel, and the third sub-pixel.