Abstract:
The invention relates to a process for fabricating electronic components incorporating an inductive microcomponent placed on top of a substrate. Such a component comprises: a layer (10) of material having a low relative permittivity, lying on the top face of the substrate (1); a number of metal turns (30-31) defined on top of the layer (10) of material having a low relative permittivity; and a copper-diffusion barrier layer (15) interposed between the metal turns (30-31) and the layer of material having a low relative permittivity.
Abstract:
A microcomponent including a capacitive component, wherein the capacitive component consists of at least two elementary capacitors (C1, C2, C3, C4) connected in series, each elementary capacitor comprising two plates, namely: a plate (10) fixed with respect to the rest of the microcomponent; a second plate (12), part of which is capable of being displaced with respect to the first fixed plate (10) due to the effect of a control signal, so as to vary the value of the capacitance of the elementary capacitor C1, and wherein the control signals for the various elementary capacitors are generated independently so as to vary the overall capacitance of the capacitor by independent variation of the capacitances of each elementary capacitor.
Abstract:
Multilayer structure, used especially as a material of high relative permittivity, characterized in that it comprises a plurality of separate layers, each having a thickness of less than 500 null, and some of which are based on aluminium, hafnium and oxygen and especially based on hafnium dioxide (HfO2) and on alumina (Al2O3). In practice, the hafnium dioxide and alumina layers form alloys of formula HfxAlyOz. Advantageously, the stoichiometry of the HfxAlyOz varies from one layer to another.
Abstract translation:特别是特别用作高相对介电常数的材料的多层结构,其特征在于它包括多个分开的层,每个层具有小于500埃的厚度,其中一些层基于铝,铪和氧,特别是基于 二氧化铪(HfO 2)和氧化铝(Al 2 O 3)。 实际上,二氧化铪和氧化铝层形成式为Hf x Al y O z的合金。 有利地,Hf x Al y O z的化学计量从一层到另一层不同。
Abstract:
Multilayer structure, used especially as a material of high relative permittivity, characterized in that it comprises a plurality of superposed elementary layers, each with a thickness of less than about 500 null, among which there are two layers based on an alloy of titanium dioxide (TiO2) and tantalum pentoxide (Ta2O5), these layers being separated by an interlayer of an alloy based on at least hafnium dioxide (HfO2) an alumina (Al2O3).
Abstract translation:特别是作为高相对介电常数的材料使用的多层结构,其特征在于,它包括多个重叠的基本层,每个层厚度小于约500埃,其中有两层是基于二氧化钛合金 TiO 2)和五氧化二钽(Ta 2 O 5),这些层由基于至少二氧化铪(HfO 2),氧化铝(Al 2 O 3)的合金中间层分开。
Abstract:
A microelectromechanical component (1) providing filtering functions, produced on a semiconductor-based substrate (10) and comprising two input terminals (7, 8) and two output terminals (26, 27), which also comprises: a metal input coil (2), connected to the input coils (7, 8) and capable of producing a magnetic field when a current flows through it; a movable element (3), connected to the substrate by at least one deformable portion and including at least one region (11, 12) made of a ferromagnetic material, said movable element (3) being capable of moving under the effect of the force, to which the region (11) made of a ferromagnetic material is subject, generated by the magnetic field produced by the input coil (2); an output member (4) forming a magnetic sensor, connected to the output terminals (26, 27) and capable of producing an electrical signal that can be varied according to the movement of the movable element (3).
Abstract:
Process for fabricating a microelectromechanical optical component (1) produced from a silicon substrate, comprising: optical propagation guides (2-5); a wall (6) which can move with respect to the propagation guides (2-5); and an electrostatic actuator (10) associated with return means formed by at least one beam (15, 16) which is capable of causing the moving wall (6) to move with respect to the rest of the substrate. According to the invention: the substrate used is made of single-crystal silicon, the (111) crystalographic planes of which are parallel to the plane of the substrate; the process comprises a first series of deep reactive ion etching steps during which the heights of the moving wall (6), of the electrodes of the actuator (11, 12), and of the beams (15, 16) of the return means of the actuator are defined with different values; and the process comprises a second wet etching step, making it possible to free the moving wall (6), the electrodes (11, 12) and the beams (15, 16) from the rest of the substrate
Abstract:
Device allowing the end (4) of an optical fiber (3) to be positioned and held in place inside a substrate (1), wherein: the substrate (1) has a groove (2) intended to accommodate the end (4) of the optical fiber (3), said groove (2) possessing at least one plane wall (8) perpendicular to the principal plane (9) of the substrate (1); the groove (2) includes a moveable part (5), located on the face opposite the plane wall (8) and capable of moving toward said plane wall (8) between two positions, namely; a retracted position in which the end of the optical fiber (3) can penetrate freely into the groove (2); a locked position in which the moveable part (5) comes into contact with the optical fiber (3) in order to press it against said plane wall (8); it includes means (21, 24) allowing a force to be exerted on the moveable part (5) in order to cause it to move with respect to the plane wall (8)
Abstract:
Inductive microcomponent (1), such as a microinductor or microtransformer, comprising a metal winding (2) having the shape of a solenoid and a magnetic core (4) made of a ferromagnetic material positioned at the center of the solenoid (2), wherein the core (4) consists of several sections (13-16) separated by cutouts (17-19) oriented parallel to the main axis (20) of the solenoid (4).
Abstract:
Multilayer structure, used especially as a material of high relative permittivity, characterized in that it comprises a plurality of separate layers, each having a thickness of less than 500 null. Some of those layers are based on aluminium, hafnium and oxygen and especially based on hafnium dioxide (HfO2) and on alumina (Al2O3). In practice, the hafnium dioxide and alumina layers form alloys of formula HfxAlyOz. Advantageously, the stoichiometry of the HfxAlyOz varies from one layer to another. Some of the layers containing HfxAlyOz alloys, or some of the layers between those containing HfxAlyOz alloys, also include a lanthanide element.
Abstract translation:特别是特别用作高相对介电常数的材料的多层结构,其特征在于它包括多个单独的层,每个层具有小于500埃的厚度。 这些层中的一些基于铝,铪和氧,特别是基于二氧化铪(HfO 2)和氧化铝(Al 2 O 3)。 实际上,二氧化铪和氧化铝层形成式为Hf x Al y O z的合金。 有利地,Hf x Al y O z的化学计量从一层到另一层不同。 含有Hf x Al y O z合金的一些层,或含有Hf x Al y O z合金的层之间的一些层也包括镧系元素。
Abstract:
An optical switching matrix, made from a semiconductor-D dielectric-based substrate, comprising: at least one set of optical input fibers (12) and at least one set of optical output fibers (14) oriented substantially perpendicular to each other, a set of moveable mirrors (5, 13) placed at the intersections of the directions defined by the various optical fibers, each mirror (13) being capable of moving in order to reflect a beam coming from an optical input fiber, bound for an optical output fiber, a set of channels defined between the mirrors, inside which the various beams are propagated before and after having encountered the mirrors, in which: the set of mirrors is made on a first substrate wafer (2), said first wafer being covered with a second substrate wafer (20), the various channels (38) are formed between protruding zones (34) present under the second substrate wafer, said protruding zones comprising housings (33) inside which the moveable mirrors are able to move.