公开(公告)号：US20100155936A1

公开(公告)日：2010-06-24

申请号：US12342393

申请日：2008-12-23

Applicant: Steven R. Codding ,  Timothy C. Krywanczyk ,  Timothy E. Neary ,  Edmund J. Sprogis

Inventor： Steven R. Codding ,  Timothy C. Krywanczyk ,  Timothy E. Neary ,  Edmund J. Sprogis

IPC: H01L21/30 ,  H01L23/488

CPC classification number: H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/27436 ,  H01L2224/83191 ,  H01L2924/00014 ,  H01L2924/01057 ,  H01L2924/09701 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 μm. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed.

Abstract translation: 在半导体基板的正面上形成C4研磨胶带和激光烧蚀粘合剂层。 然后将载体基板连接到激光烧蚀粘合剂层。 通过抛光或研磨使半导体衬底的背面变薄，在此期间，载体衬底提供机械支撑以使半导体衬底的薄化能够达到约25μm的厚度。 胶片框架胶带附着到减薄的半导体衬底的背面，激光烧蚀粘合剂层通过激光烧蚀，从而使载体衬底与C4研磨胶带的背面分离。 薄膜框架胶带，变薄的半导体衬底和C4研磨胶带的组装被切割。 通过紫外线照射C4研磨胶带以变得粘合性变差，随后被除去。

公开(公告)号：US07572739B2

公开(公告)日：2009-08-11

申请号：US10905914

申请日：2005-01-26

Applicant: Steven R. Codding ,  Timothy C Krywanczyk ,  Steven G. Perrotte ,  Jason P. Ritter

Inventor： Steven R. Codding ,  Timothy C Krywanczyk ,  Steven G. Perrotte ,  Jason P. Ritter

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/6835 ,  H01L2221/6834 ,  H01L2924/19041

Abstract: A semiconductor structure fabrication method for removing a tape physically attached to a device side of the semiconductor substrate by an adhesive layer of the tape, wherein the adhesive layer comprises an adhesive material. The method includes the step of submerging the tape in a liquid chemical comprising monoethanolamine or an alkanolamine for a pre-specified period of time sufficient to allow for a separation of the tape from the semiconductor substrate without damaging devices on the semiconductor substrate.

Abstract translation: 一种半导体结构制造方法，用于通过所述带的粘合剂层去除物理地附接到所述半导体衬底的器件侧的带，其中所述粘合剂层包括粘合剂材料。 该方法包括将胶带浸入包含单乙醇胺或链烷醇胺的液体化学品中的步骤，其预定时间足以允许胶带从半导体衬底上分离而不损坏半导体衬底上的装置。

公开(公告)号：US07498236B2

公开(公告)日：2009-03-03

申请号：US11563715

申请日：2006-11-28

Applicant: Steven R. Codding ,  Timothy C. Krywanczyk ,  Edmund J. Sprogis

Inventor： Steven R. Codding ,  Timothy C. Krywanczyk ,  Edmund J. Sprogis

IPC: H01L21/30 ,  H01L21/46 ,  H01L21/306 ,  C23F1/00

CPC classification number: H01L21/78

Abstract: Disclosed are a method of and system for fabricating a semiconductor wafer. The method comprises the steps of providing a silicon wafer having a front side an a back side, building an integrated circuit on the front side of the wafer, and thereafter removing substrate from the back side of the silicon wafer. The building step includes the steps of forming a desired structure in the wafer, and forming an end structure in the wafer, said end structure extending to a greater depth, toward the back side of the wafer, than the desired structure. Also, the removing step includes the step of removing said substrate only to the end structure, whereby no part of the desired structure is removed during the removing step.

Abstract translation: 公开了用于制造半导体晶片的方法和系统。 该方法包括以下步骤：提供具有正面和背面的硅晶片，在晶片前侧构建集成电路，然后从硅晶片的背面去除衬底。 构建步骤包括以下步骤：在晶片中形成期望的结构，并且在晶片中形成端部结构，所述端部结构延伸到比晶片的背面更大的深度，而不是期望的结构。 此外，除去步骤包括仅将该基材除去至端部结构的步骤，由此在除去步骤期间不除去所需结构的一部分。

公开(公告)号：US07387911B2

公开(公告)日：2008-06-17

申请号：US10990778

申请日：2004-11-16

Applicant: David M Audette ,  Steven R. Codding ,  Timothy C. Krywanczyk ,  Brian J. Thibault ,  Matthew R. Whalen

Inventor： David M Audette ,  Steven R. Codding ,  Timothy C. Krywanczyk ,  Brian J. Thibault ,  Matthew R. Whalen

IPC: H01L21/50 ,  H01L21/48 ,  H01L21/44 ,  H01L21/46 ,  H01L23/544 ,  H01L21/768 ,  H01L21/78

CPC classification number: H01L23/562 ,  H01L21/78 ,  H01L23/36 ,  H01L23/3737 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thermally conductive protective film or layer is applied to the backside surface of a semiconductor wafer prior to a subsequent dicing operation performed on the wafer to singulate the wafer into diced semiconductor chips, during which the thin thermally conductive film minimizes and prevents chipping and cracking damage to the wafer and diced chips. During subsequent electrical operation of a diced chip, the thin thermally conductive film functions as a thermal conductor to dissipate and conduct away to a heat sink any heat generated during operation of the chip.

Abstract translation: 在对晶片进行随后的切割操作之前，将导热保护膜或层施加到半导体晶片的背面，以便将晶​​片分成切割的半导体芯片，在此期间，薄导热膜最小化并防止切屑和破裂损伤 到晶圆和切片芯片。 在切割芯片的随后的电操作期间，薄的导热膜用作热导体，以在芯片的操作期间产生的热量消散并导向散热器。

公开(公告)号：US07025891B2

公开(公告)日：2006-04-11

申请号：US10604991

申请日：2003-08-29

Applicant: Steven R. Codding ,  Timothy C. Krywanczyk ,  Joseph D. Danaher ,  John C. Malinowski ,  James R. Palmer ,  Melvin T. Kelly ,  Caitlin W. Weinstein ,  Wolfgang Sauter

Inventor： Steven R. Codding ,  Timothy C. Krywanczyk ,  Joseph D. Danaher ,  John C. Malinowski ,  James R. Palmer ,  Melvin T. Kelly ,  Caitlin W. Weinstein ,  Wolfgang Sauter

IPC: B44C1/22 ,  C25F3/00

CPC classification number: H01L21/3212 ,  C23F3/06

Abstract: A method of treating a molybdenum (moly) mask used in a C4 process to pattern C4 contacts. The moly mask has a wafer side which contacts a wafer during the C4 process and has a rough surface that includes spikes/projections of moly. The moly mask also has a non wafer side and a plurality of holes extending through the mask to pattern C4 contacts in the C4 process. An adhesive layer, such as an adhesive tape, is applied to the non wafer side of the moly mask, to enable a polishing tool to pull a vacuum on the non wafer side of the moly mask in spite of the presence of the holes to secure the moly mask during a subsequent polishing step. The tape also functions as a cushion so that defects on the non wafer side of the moly mask do not replicate through the moly mask to the polished wafer side of the moly mask. The wafer side of the moly mask is then subjected to mechanical or chemical/mechanical polishing to substantially remove the spikes of moly without significantly altering the dimensions of the moly mask or the holes.

Abstract translation: 一种处理C4工艺中使用的钼（钼）掩模的图案化C4接触的方法。 钼掩模具有在C4工艺期间接触晶片的晶片侧，并且具有包括钼的尖峰/突起的粗糙表面。 钼掩模还具​​有非晶片侧和在C4工艺中延伸穿过掩模以形成图案C4触点的多个孔。 粘合剂层例如胶带被施加到钼掩模的非晶片侧，以使抛光工具能够在钼掩模的非晶片侧上拉真空，尽管存在孔以确保 在随后的抛光步骤期间的钼掩模。 胶带还起垫片的作用，使得钼掩模的非晶片侧的缺陷不会通过钼掩模复制到钼掩模的抛光晶片侧。 然后对钼掩模的晶片侧进行机械或化学/机械抛光，以基本上除去钼的尖峰而不显着改变钼掩模或孔的尺寸。