公开(公告)号：US10768153B2

公开(公告)日：2020-09-08

申请号：US15748723

申请日：2016-08-01

Applicant: TODOS TECHNOLOGIES LTD. ,  Technion Research and Development Foundation Ltd.

Inventor： Yael Nemirovsky ,  Amikam Nemirovsky ,  Shmuel Melman

IPC: G01N33/00 ,  G01N25/30

Abstract: A gas sensing device that includes a (a) gas reactive element that has a gas dependent temperature parameter; and (b) a semiconductor temperature sensing element that is spaced apart from the gas reactive element and is configured to sense radiation emitted from the gas reactive element and generate detection signals that are responsive to a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale.

公开(公告)号：US20200088664A1

公开(公告)日：2020-03-19

申请号：US16580120

申请日：2019-09-24

Applicant: TODOS TECHNOLOGIES LTD. ,  TECHNION RESEARCH AND DEVELOPEMENT FOUNDATION LTD.

Inventor： Yael Nemirovsky

IPC: G01N25/20 ,  G01K7/01 ,  G01N25/30 ,  G01N27/16 ,  H01L21/764 ,  G01N33/00

Abstract: A gas sensing device, comprising a bulk and an array of gas sensing elements that are thermally isolated from the bulk, wherein each gas sensing element of a plurality of gas sensing elements of the array comprises (i) a gas reactive element that has a gas dependent temperature parameter; (ii) a semiconductor temperature sensing element that is thermally coupled to the gas reactive element and is configured to generate detection signals that are responsive to a temperature of the gas reactive element; and (iii) multiple heating elements that are configured to heat the gas reactive element to at least one predefined temperature.

公开(公告)号：US20170205366A1

公开(公告)日：2017-07-20

申请号：US15312655

申请日：2015-05-19

Applicant: TODOS TECHNOLOGIES LTD ,  TECHNION RESEARCH AND DEVELOPEMENT FOUNDATION LTD

Inventor： YAEL NEMIROVSKY

IPC: G01N25/20 ,  G01N33/00 ,  G01K7/01

CPC classification number: G01N25/20 ,  G01K7/01 ,  G01K7/015 ,  G01N25/30 ,  G01N27/16 ,  G01N33/0031 ,  H01L21/764

Abstract: A method and a gas sensing device are provided. The gas sensing device may include a bulk and an array of gas sensing elements that are thermally isolated from the bulk, wherein each gas sensing element of a plurality of gas sensing elements of the array comprises (i) a gas reactive element that has a gas dependent temperature parameter; and (ii) a semiconductor temperature sensing element that is thermally coupled to the gas reactive element and is configured to generate detection signals that are responsive to a temperature of the gas reactive element.