Abstract:
An optoelectronic device is disclosed, comprising: a photodiode array including a plurality of first photodiodes, each first photodiode including a respective n+ region and a respective n-well region; a guide array disposed over the photodiode array, the guide array including a plurality of guide members separated from one another by a layer of light-blocking material, the guide members being aligned with the n+ regions of the first photodiodes, such that each guide member is disposed over a different respective n+ region, and the layer of light-blocking material being aligned with the n-well regions of the first photodiodes; and a filter array disposed over the guide array, the filter array including a plurality of bandpass filters, each bandpass filter being aligned with a different one of the plurality of guide members, each bandpass filter having a different transmission band.
Abstract:
The present invention provides for a flip chip resistor having a substrate having opposite ends, a pair of electrodes formed from a first electrode layer disposed on the opposite ends of the substrate, a resistance layer electrically connecting the pair of electrodes, a protective layer overlaying the resistance layer, and a second electrode layer overlaying the first electrode layer and at least a portion of the protective layer. The present invention provides for higher reliability performance and enlarging the potential soldering area despite small chip size. A method of the present invention provides for manufacturing flip chip resistors by applying a first electrode layer to a substrate to create at least one pair of opposite electrodes, applying a resistance layer between each pair of opposite electrodes; applying a first protective layer at least partially overlaying the resistance layer, applying a second protective layer at least partially overlaying at least a portion of the resistance layer, and applying a second electrode layer overlaying the first electrode layer and at least a portion of the second protective layer.
Abstract:
A semiconductor package by which contacts are made to both sides of the dice is manufactured on a wafer scale. The back side of the wafer is attached to a metal plate. The scribe lines separating the dice are saw cut to expose the metal plate but the cuts do not extend through the metal plate. A metal layer, which may include a number of sublayers, is formed on the front side of the dice, the metal covering the exposed portions of the metal plate and extending the side edges of the dice. Separate sections of the metal layer may also cover connection pads on the front side of the dice. A second set of saw cuts are made coincident with the first set of saw cuts, using a blade that is narrower than the blade used to make the first set of saw cuts. As a result, the metal layer remains on the side edges of the dice connecting the back and front sides of the dice (via the metal plate). Since no wire bonds are required, the resulting package is rugged and provides a low-resistance electrical connection between the back and front sides of the dice.
Abstract:
A strain multiplier is provided which is designed to be firmly attached to both a structural surface and a sensing gage at all points of contact between the multiplier and the structural surface and the multiplier and the sensing gage while preventing direct contact between the sensing gage and the structural surface.
Abstract:
A chip resistor includes an insulating substrate, top terminal electrodes formed on top surface of the substrate using silver-based cermet, bottom electrodes, resistive element that is situated between the top terminal electrodes and overlaps them partially, an optional internal protective coating that covers resistive element completely or partially, an external protective coating that covers completely the internal protection coating and partially covers top terminal electrodes, a plated layer of nickel that covers face sides of the substrate, top and bottom electrodes, and overlaps partially external protective coating, finishing plated layer that covers nickel layer. The overlap of nickel layer and external protective layer possesses a sealing property because of metallization of the edges of external protective layer prior to the nickel plating process.
Abstract:
A chip resistor includes an insulating substrate, top terminal electrodes formed on top surface of the substrate using silver-based cermet, bottom electrodes, resistive element that is situated between the top terminal electrodes and overlaps them partially, an optional internal protective coating that covers resistive element completely or partially, an external protective coating that covers completely the internal protection coating and partially covers top terminal electrodes, a plated layer of nickel that covers face sides of the substrate, top and bottom electrodes, and overlaps partially external protective coating, finishing plated layer that covers nickel layer. The overlap of nickel layer and external protective layer possesses a sealing property because of metallization of the edges of external protective layer prior to the nickel plating process.
Abstract:
An adjustable resistor wherein a predetermined pattern of thin metallic film is deposited upon a substrate, a thin isolating layer being interposed between the substrate and film, and a movable contact system with suitable linear or rotary mechanical drive means is arranged for movability parallel to the substrate surface on which are fixed the isolating layer and metallic film, the contact system providing connection to the metallic film at a distance from one end thereof dependent on the position of the drive means. The pattern in the metallic film compels the electric current to flow through a path of limited width and of effective length much greater than the straightline length along the midline of the pattern.