公开(公告)号：US20090273972A1

公开(公告)日：2009-11-05

申请号：US12296812

申请日：2007-04-11

Applicant: Xiufeng Han ,  Zhongming Zeng ,  Yunan Han ,  Lixian Jiang ,  Zilong Peng ,  Wenshan Zhan

Inventor： Xiufeng Han ,  Zhongming Zeng ,  Yunan Han ,  Lixian Jiang ,  Zilong Peng ,  Wenshan Zhan

IPC: G11C11/15 ,  H01L21/00

CPC classification number: G11C11/155 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/329 ,  H01L43/08 ,  H03K19/16 ,  Y10T29/53165

Abstract: A magnetic logic element with toroidal magnetic multilayers (5,6,8,9). The magnetic logic element comprises a toroidal closed section which is fabricated by etching a unit of magnetic multilayers (5,6,8,9) deposited on a substrate. Optionally, the magnetic logic element may also comprise a metal core (10) in the closed toroidal section. Said magnetic multilayers (5,6,8,9) unit is arranged on the input signal lines A, B, C and an output signal line O, and then is made into a closed toroidal. Subsequently, on the toroidal magnetic multilayered unit (5,6,8,9), the input signal lines A′, B′, C′ and an output signal line O′ are fabricated by etching. This magnetic logic element can reduce the demagnetization field and the shape anisotropy effectively, leading to the decrease of the reversal field of magnetic free layer. Furthermore, this magnetic logic element has stable working performance and long operation life of the device.

Abstract translation: 具有环形磁性多层（5,6,8,9）的磁性逻辑元件。 磁逻辑元件包括通过蚀刻沉积在衬底上的磁性多层（5,6,8,9）单元制造的环形闭合部分。 可选地，磁逻辑元件还可以包括在闭合环形部分中的金属芯（10）。 所述磁性多层（5,6,8,9）单元布置在输入信号线A，B，C和输出信号线O上，然后制成闭合环形。 随后，在环形磁性多层单元（5,6,8,9）上，通过蚀刻制造输入信号线A'，B'，C'和输出信号线O'。 该磁逻辑元件可有效地减少退磁场和形状各向异性，导致无磁层反转场的减小。 此外，该磁逻辑元件具有稳定的工作性能和较长的使用寿命。

公开(公告)号：US20090168506A1

公开(公告)日：2009-07-02

申请号：US12159657

申请日：2006-12-31

Applicant: Xiufeng Han ,  Ming Ma ,  Qihang Tan ,  Hongxiang Wei ,  Lixian Jiang ,  Yunan Han

Inventor： Xiufeng Han ,  Ming Ma ,  Qihang Tan ,  Hongxiang Wei ,  Lixian Jiang ,  Yunan Han

IPC: G11C11/14 ,  G11B5/706 ,  B44C1/22 ,  H01L29/82

CPC classification number: G11C11/155 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/329 ,  H01F41/302 ,  H01L27/228 ,  H01L43/08

Abstract: Each layer in the magnetic multilayer film is a closed ring or oval ring and the magnetic moment or flux of the ferromagnetic film in the magnetic unit is in close state either clockwise or counterclockwise. A metal core is put in the geometry center position in the close-shaped magnetic multilayer film. The cross section of the metal core is a corresponding circular or oval. A MRAM is made of the closed magnetic multilayer film with or without a metal core. The close-shaped magnetic multilayer film is formed by micro process method. The close-shaped magnetic multilayer film can be used broadly in a great variety of device that uses a magnetic multilayer film as the core, such as MRAM, magnetic bead in computer, magnetic sensitive sensor, magnetic logic device and spin transistor.

Abstract translation: 磁性多层膜中的每层是闭环或椭圆环，并且磁性单元中的铁磁性膜的磁矩或磁通处于顺时针或逆时针处于接近状态。 将金属芯置于紧密形状的磁性多层膜中的几何中心位置。 金属芯的横截面是相应的圆形或椭圆形。 MRAM由具有或不具有金属芯的闭合磁性多层膜制成。 通过微加工方法形成紧密形状的磁性多层膜。 近似形状的磁性多层膜可以广泛用于以磁性多层膜为核心的多种器件，如MRAM，计算机中的磁珠，磁敏传感器，磁性逻辑器件和自旋晶体管。

公开(公告)号：US07480171B2

公开(公告)日：2009-01-20

申请号：US10599514

申请日：2004-12-01

Applicant: Zilong Peng ,  Xiufeng Han ,  Sufen Zhao ,  Weining Wang ,  Wenshan Zhan

Inventor： Zilong Peng ,  Xiufeng Han ,  Sufen Zhao ,  Weining Wang ,  Wenshan Zhan

IPC: G11C7/00

CPC classification number: G11C11/16 ,  B82Y10/00 ,  H01L27/228

Abstract: The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.

Abstract translation: 本发明公开了一种基于垂直电流写入的MRAM（Magnetoresistive RAM）及其控制方法，MRAM单元中的信息写入操作通过与MFC单元并联的电流产生的磁场的公司效应完成， 电流垂直于MFC单元并通过本机。 这种结构的优点是：消除现有技术中的字线（WL），特别是用于信息写入，减少金属布线层和接触孔的数量，并降低MRAM的结构的复杂性，以及制造的难度和成本 处理。

公开(公告)号：US20070183186A1

公开(公告)日：2007-08-09

申请号：US10599514

申请日：2004-12-01

Applicant: Zilong Peng ,  Xiufeng Han ,  Sufen Zhao ,  Weining Wang ,  Wenshan Zhan

Inventor： Zilong Peng ,  Xiufeng Han ,  Sufen Zhao ,  Weining Wang ,  Wenshan Zhan

IPC: G11C11/00

CPC classification number: G11C11/16 ,  B82Y10/00 ,  H01L27/228

Abstract: The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.

Abstract translation: 本发明公开了一种基于垂直电流写入的MRAM（Magnetoresistive RAM）及其控制方法，MRAM单元中的信息写入操作通过与MFC单元并联的电流产生的磁场的公司效应完成， 电流垂直于MFC单元并通过本机。 这种结构的优点是：消除现有技术中的字线（WL），特别是用于信息写入，减少金属布线层和接触孔的数量，并降低MRAM的结构的复杂性，以及制造的难度和成本 处理。