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公开(公告)号:US11414339B2
公开(公告)日:2022-08-16
申请号:US17017891
申请日:2020-09-11
Applicant: AGC Inc.
Inventor: Hirofumi Tokunaga , Kazutaka Ono
Abstract: An alkali free glass has an average coefficient of thermal expansion at 50 to 350° C. of 30×10−7 to 43×10−7/° C., a Young's modulus of 88 GPa or more, a strain point of 650 to 725° C., a temperature T4 at which a viscosity reaches 104 dPa·s of 1,290° C. or lower, a glass surface devitrification temperature (Tc) of T4+20° C. or lower, and a temperature T2 at which the viscosity reaches 102 dPa·s of 1,680° C. or lower. The alkali free glass contains, as represented by mol % based on oxides, 62 to 67% of SiO2, 12.5 to 16.5% of Al2O3, 0 to 3% of B2O3, 8 to 13% of MgO, 6 to 12% of CaO, 0.5 to 4% of SrO, and 0 to 0.5% of BaO. MgO+CaO+SrO+BaO is 18 to 22%, and MgO/CaO is 0.8 to 1.33.
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公开(公告)号:US20210366760A1
公开(公告)日:2021-11-25
申请号:US17398107
申请日:2021-08-10
Applicant: AGC Inc.
Inventor: Yu Hanawa , Shuhei Nomura , Kazutaka Ono , Nobuhiko Takeshita , Keisuke Hanashima
IPC: H01L21/687 , C03B33/02 , B65D85/48 , H01L21/67 , G05B1/00 , H01L23/544 , C03C27/10 , B32B17/10 , C03B33/023 , H01L21/56
Abstract: A glass substrate is laminated with a substrate containing silicon to thereby form a laminated substrate. The glass substrate has a concave surface and a convex surface and has one or more marks that distinguish between the concave surface and the convex surface.
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公开(公告)号:US10370286B2
公开(公告)日:2019-08-06
申请号:US14597587
申请日:2015-01-15
Applicant: AGC Inc.
Inventor: Jun Endo , Shusaku Akiba , Kazutaka Ono , Tetsuya Nakashima
IPC: C03C21/00 , C03C3/085 , C03C3/087 , C03C3/091 , G02F1/1333
Abstract: To provide glass to be used for chemically tempered glass, of which the strength is less likely to be reduced even when indentations are formed thereon. Glass for chemical tempering, which comprises, as represented by mole percentage based on oxides, from 62 to 68% of SiO2, from 6 to 12% of Al2O3, from 7 to 13% of MgO, from 9 to 17% of Na2O, and from 0 to 7% of K2O, wherein the difference obtained by subtracting the content of Al2O3 from the total content of Na2O and K2O is less than 10%, and when ZrO2 is contained, its content is at most 0.8%. Chemically tempered glass obtained by chemically tempering such glass for chemical tempering. Such chemically tempered glass has a compressive stress layer formed on the glass surface, which has a thickness of at least 30 μm and a surface compressive stress of at least 550 MPa.
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公开(公告)号:US12071373B2
公开(公告)日:2024-08-27
申请号:US17022264
申请日:2020-09-16
Applicant: AGC Inc.
Inventor: Shuhei Nomura , Kazutaka Ono
CPC classification number: C03C4/16 , C03C3/091 , H01Q1/36 , C03C2204/00
Abstract: The present invention relates to a substrate having a dielectric loss tangent (A) as measured at 20° C. and 10 GHz of 0.1 or less, a dielectric loss tangent (B) as measured at 20° C. and 35 GHz of 0.1 or less, and a ratio [a dielectric loss tangent (C) as measured at an arbitrary temperature in a range of −40 to 150° C. and at 10 GHz]/[the dielectric loss tangent (A)] of 0.90-1.10, or a substrate having a relative permittivity (a) as measured at 20° C. and 10 GHz of 4 or more and 10 or less, a relative permittivity (b) as measured at 20° C. and 35 GHz of 4 or more and 10 or less, and a ratio [a relative permittivity (c) as measured at an arbitrary temperature in a range of −40 to 150° C. and at 10 GHz]/[the relative permittivity (a)] of 0.993-1.007.
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公开(公告)号:US11708294B2
公开(公告)日:2023-07-25
申请号:US16720979
申请日:2019-12-19
Applicant: AGC Inc.
Inventor: Kazutaka Ono , Shuhei Nomura , Nobutaka Kidera , Nobuhiko Takeshita
IPC: C03C3/089 , C03C4/16 , H05K1/03 , C03C3/091 , H05K1/02 , C03B25/08 , C03C3/06 , C03B19/14 , C03C3/087 , C03B17/02 , C03B17/06 , C03C3/118 , C03C13/04
CPC classification number: C03C3/089 , C03C3/091 , C03C4/16 , H05K1/024 , H05K1/03 , C03B17/02 , C03B17/064 , C03B19/14 , C03B25/08 , C03C3/06 , C03C3/087 , C03C3/118 , C03C13/046 , C03C2204/08 , C03C2217/253
Abstract: A glass substrate for a high-frequency device, which contains SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of alkaline earth metal oxides in the range of 0.1-13% in terms of mole percent on the basis of oxides, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.
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公开(公告)号:US11594811B2
公开(公告)日:2023-02-28
申请号:US17550080
申请日:2021-12-14
Applicant: AGC Inc.
Inventor: Shuhei Nomura , Kazutaka Ono
Abstract: Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)×average thermal expansion coefficient (ppm/° C.) at 50-350° C.}≤300 (GPa·ppm/° C.), wherein the relative dielectric constant at 20° C. and 35 GHz does not exceed 10, and the dielectric dissipation factor at 20° C. and 35 GHz does not exceed 0.006.
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公开(公告)号:US11554983B2
公开(公告)日:2023-01-17
申请号:US16264722
申请日:2019-02-01
Applicant: AGC INC.
Inventor: Shuhei Nomura , Kazutaka Ono
IPC: C03C3/091 , C03C4/20 , H01L21/02 , H01L27/12 , H01L29/786 , G02F1/1333 , H01L21/762 , H01L29/66
Abstract: A glass substrate has a compaction of 0.1 to 100 ppm. An absolute value |Δα50/100| of a difference between an average coefficient of thermal expansion α50/100 of the glass substrate and an average coefficient of thermal expansion of single-crystal silicon at 50° C. to 100° C., an absolute value |Δα100/200| of a difference between an average coefficient of thermal expansion α100/200 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 100° C. to 200° C., and an absolute value |Δα200/300| of a difference between an average coefficient of thermal expansion α200/300 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 200° C. to 300° C. are 0.16 ppm/° C. or less.
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公开(公告)号:US11247933B2
公开(公告)日:2022-02-15
申请号:US16264734
申请日:2019-02-01
Applicant: AGC INC.
Inventor: Shuhei Nomura , Kazutaka Ono
Abstract: An alkali-free glass substrate which is a glass substrate includes, as represented by molar percentage based on oxides, 0.1% to 10% of ZnO. The alkali-free glass substrate has an average coefficient of thermal expansion α50/100 at 50 to 100° C. of from 2.70 ppm/° C. to 3.20 ppm/° C., an average coefficient of thermal expansion α200/300 at 200 to 300° C. of from 3.45 ppm/° C. to 3.95 ppm/° C., and a value α200/300/α50/100 obtained by dividing the average coefficient of thermal expansion α200/300 at 200 to 300° C. by the average coefficient of thermal expansion α50/100 at 50 to 100° C. of from 1.20 to 1.30.
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公开(公告)号:US11114356B2
公开(公告)日:2021-09-07
申请号:US16555702
申请日:2019-08-29
Applicant: AGC Inc.
Inventor: Yu Hanawa , Shigeki Sawamura , Shuhei Nomura , Kazutaka Ono , Nobuhiko Takeshita , Keisuke Hanashima
IPC: B32B15/04 , H01L23/15 , C03C27/04 , C03C3/085 , C03C3/087 , C03C3/091 , C03C3/093 , C03C17/22 , H01L23/13
Abstract: The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 μm to 300 μm, and an inclination angle due to the warpage of 0.0004° to 0.12°.
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公开(公告)号:US10994517B2
公开(公告)日:2021-05-04
申请号:US16355613
申请日:2019-03-15
Applicant: AGC INC.
Inventor: Shigeki Sawamura , Kazutaka Ono
Abstract: A first aspect of the present invention relates to a glass substrate having a content of alkali metal oxides, as represented by molar percentage based on oxides, of 0 to 0.1%, a devitrification-temperature viscosity of 103.2 dPa·s or higher, and an average coefficient of thermal expansion α at 30 to 220° C. of 7.80 to 9.00 (ppm/° C.). A second aspect of the present invention relates to a glass substrate which is to be used for a support substrate for semiconductor packages, the glass substrate having a content of alkali metal oxides, as represented by molar percentage based on oxides, of 0 to 0.1% and a photoelastic constant of 10 to 26 nm/cm/MPa.
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