Silicon-Based MEMS Devices Including Wells Embedded with High Density Metal
    12.
    发明申请
    Silicon-Based MEMS Devices Including Wells Embedded with High Density Metal 审中-公开
    包括嵌入高密度金属的井的硅基MEMS器件

    公开(公告)号:US20160178656A1

    公开(公告)日:2016-06-23

    申请号:US14695421

    申请日:2015-04-24

    CPC classification number: G01P15/0802 B81C1/00261 G01C19/5769

    Abstract: In one aspect, the disclosure is directed to a MEMS device. The MEMS device includes a silicon-based movable MEMS sensor element. The MEMS device also includes a plurality of wells formed into at least one surface of the movable MEMS sensor element. Each well is filled with at least one metal so as to increase the effective mass of the movable MEMS sensor element. The metal may be tungsten or tantalum, or an alloy with tungsten or tantalum.

    Abstract translation: 在一个方面,本发明涉及一种MEMS装置。 MEMS器件包括硅基可​​移动MEMS传感器元件。 MEMS器件还包括形成在可移动MEMS传感器元件的至少一个表面中的多个阱。 每个孔填充有至少一个金属,以便增加可移动MEMS传感器元件的有效质量。 金属可以是钨或钽,或与钨或钽的合金。

    Tilt Mode Accelerometer with improved Offset and Noise Performance
    13.
    发明申请
    Tilt Mode Accelerometer with improved Offset and Noise Performance 有权
    倾斜模式加速度计具有改进的偏移和噪声性能

    公开(公告)号:US20140251011A1

    公开(公告)日:2014-09-11

    申请号:US13785624

    申请日:2013-03-05

    CPC classification number: G01P15/125 G01P15/08 G01P2015/0831 G01P2015/0834

    Abstract: A single-axis tilt-mode microelectromechanical accelerometer structure. The structure includes a substrate having a top surface defined by a first end and a second end. Coupled to the substrate is a first asymmetrically-shaped mass suspended above the substrate pivotable about a first pivot point on the substrate between the first end and the second end and a second asymmetrically-shaped mass suspended above the substrate pivotable about a second pivot point on the substrate between the first end and the second end. The structure also includes a first set of electrodes positioned on the substrate and below the first asymmetrically-shaped mass and a second set of electrodes positioned on the substrate and below the second asymmetrically-shaped mass.

    Abstract translation: 单轴倾斜模式微机电加速度计结构。 该结构包括具有由第一端和第二端限定的顶表面的基底。 耦合到衬底的是第一不对称形状的质量块,悬挂在衬底上方,可在第一端和第二端之间围绕衬底上的第一枢转点枢转,并且悬挂在衬底上方的第二不对称形状的质量可围绕第二枢转点枢转 第一端和第二端之间的衬底。 该结构还包括位于衬底上并位于第一不对称形状的质量下方的第一组电极和位于衬底上并位于第二不对称形状的质量下方的第二组电极。

    MEMS Device With Stress Relief Structures
    14.
    发明申请
    MEMS Device With Stress Relief Structures 有权
    具有应力消除结构的MEMS器件

    公开(公告)号:US20140217521A1

    公开(公告)日:2014-08-07

    申请号:US13757217

    申请日:2013-02-01

    Abstract: An encapsulated MEMS device includes stress-relief trenches in a region of its substrate that surrounds the movable micromachined structures and that is covered by a cap, such that the trenches are fluidly exposed to a cavity between the substrate and the cap. A method of fabricating a MEMS device includes fabricating stress-relief trenches through a substrate and fabricating movable micromachined structures, and capping the device prior art encapsulating the device.

    Abstract translation: 封装的MEMS器件包括在其衬底的区域中的应力消除沟槽,该沟槽围绕可移动的微机械加工结构并且被盖覆盖,使得沟槽被流体地暴露于衬底和盖之间的空腔。 制造MEMS器件的方法包括通过衬底制造应力消除沟槽并制造可移动的微机械加工结构,并且封装装置封装器件的现有技术。

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