公开(公告)号：US20170321320A1

公开(公告)日：2017-11-09

申请号：US15598687

申请日：2017-05-18

Applicant: Applied Materials, Inc.

Inventor： Sang-Ho YU ,  Kevin MORAES ,  Seshadri GANGULI ,  Hua CHUNG ,  See-Eng PHAN

IPC: C23C16/16 ,  H01L21/768 ,  H01L21/285 ,  C23C16/02 ,  H01L21/02 ,  C23C16/18 ,  H01L21/324

CPC classification number: C23C16/16 ,  C23C16/0218 ,  C23C16/18 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/324 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76862 ,  H01L21/76883

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

公开(公告)号：US20150325446A1

公开(公告)日：2015-11-12

申请号：US14682218

申请日：2015-04-09

Applicant: Applied Materials, Inc.

Inventor： Sang-Ho YU ,  Kevin MORAES ,  Seshadri GANGULI ,  Hua CHUNG ,  See-Eng PHAN

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/324

CPC classification number: C23C16/16 ,  C23C16/0218 ,  C23C16/18 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/324 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76862 ,  H01L21/76883

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.