公开(公告)号：US09601431B2

公开(公告)日：2017-03-21

申请号：US14173807

申请日：2014-02-05

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Mehul B. Naik ,  Yong Cao ,  Mei-yee Shek ,  Yana Cheng ,  Sree Rangasai V. Kesapragada

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L21/285

CPC classification number: H01L23/53238 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnect structure for use in semiconductor devices and a method for fabricating the same is described. The method includes positioning a substrate in a vacuum processing chamber. The substrate has an exposed copper surface and an exposed low-k dielectric surface. A metal layer is formed over the copper surface but not over the low-k dielectric surface. A metal-based dielectric layer is formed over the metal layer and the low-k dielectric layer.