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公开(公告)号：US11754918B2
公开(公告)日：2023-09-12
申请号：US17548944
申请日：2021-12-13
Applicant: ASML NETHERLANDS B.V.
Inventor： David Ferdinand Vles , Chaitanya Krishna Ande , Antonius Franciscus Johannes De Groot , Adrianus Johannes Maria Giesbers , Johannes Joseph Janssen , Paul Janssen , Johan Hendrik Klootwijk , Peter Simon Antonius Knapen , Evgenia Kurganova , Marcel Peter Meijer , Wouter Rogier Meijerink , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Raymond Olsman , Hrishikesh Patel , Mária Péter , Gerrit Van Den Bosch , Wilhelmus Theodorus Anthonius Johannes Van Den Einden , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , Hendrikus Jan Wondergem , Aleksandar Nikolov Zdravkov
IPC: G03F1/64
CPC classification number: G03F1/64
Abstract: The invention relates to a pellicle assembly comprising a pellicle frame defining a surface onto which a pellicle is attached. The pellicle assembly comprises one or more three-dimensional expansion structures that allow the pellicle to expand under stress. The invention also relates to a pellicle assembly for a patterning device comprising one or more actuators for moving the pellicle assembly towards and way from the patterning device.
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公开(公告)号：US11287752B2
公开(公告)日：2022-03-29
申请号：US16625135
申请日：2018-06-07
Applicant: ASML Netherlands B.V.
Inventor： Adrianus Hendrik Koevoets , Cornelis Adrianus De Meijere , Willem Michiel De Rapper , Sjoerd Nicolaas Lambertus Donders , Jan Groenewold , Alain Louis Claude Leroux , Maxim Aleksandrovich Nasalevich , Andrey Nikipelov , Johannes Adrianus Cornelis Maria Pijnenburg , Jacobus Cornelis Gerardus Van Der Sanden
IPC: G03F7/20
Abstract: A lithographic apparatus comprising a projection system configured to project a patterned radiation beam to form an exposure area on a substrate, a cooling apparatus located in use above the substrate adjacent to the exposure area, the cooling apparatus being configured to remove heat from the substrate during use, a plasma vessel located below the cooling apparatus with its opening facing towards the cooling apparatus, and a gas supply for supplying gas to the plasma vessel and an aperture for receipt of a radiation beam. In use, supplied gas and a received radiation beam react to form a plasma within the plasma vessel that is directed towards a surface of the cooling apparatus which faces the opening of the plasma vessel.
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公开(公告)号：US11971654B2
公开(公告)日：2024-04-30
申请号：US18208188
申请日：2023-06-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter-Jan Van Zwol , Adrianus Johannes Maria Giesbers , Johan Hendrik Klootwijk , Evgenia Kurganova , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Leonid Aizikovitsj Sjmaenok , Ties Wouter Van Der Woord , David Ferdinand Vles
IPC: G03F1/62
CPC classification number: G03F1/62
Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
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公开(公告)号：US11287737B2
公开(公告)日：2022-03-29
申请号：US16761683
申请日：2018-11-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter-Jan Van Zwol , Adrianus Johannes Maria Giesbers , Johan Hendrik Klootwijk , Evgenia Kurganova , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Leonid Aizikovitsj Sjmaenok , Ties Wouter Van Der Woord , David Ferdinand Vles
IPC: G03F1/62
Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
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15.发明授权公开(公告)号：US11143975B2
公开(公告)日：2021-10-12
申请号：US16472712
申请日：2017-11-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Andrey Nikipelov , Vadim Yevgenyevich Banine , Joost André Klugkist , Maxim Aleksandrovich Nasalevich , Roland Johannes Wilhelmus Stas , Sando Wricke
Abstract: A lithographic apparatus has an object, the object includes: a substrate and optionally a lower layer on the substrate; an upper layer; and an intermediate layer between the upper layer and the substrate, wherein a bond strength between the intermediate layer and the substrate or lower layer is greater than a bond strength between the intermediate layer and the upper layer and the intermediate layer has a Young's Modulus and/or a Poisson ratio within 20% of that of the upper layer.
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Patent Agency Ranking
公开(公告)号：US20210109438A1
公开(公告)日：2021-04-15
申请号：US17130537
申请日：2020-12-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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公开(公告)号：US10976196B2
公开(公告)日：2021-04-13
申请号：US16488259
申请日：2018-02-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Joost André Klugkist , Vadim Yevgenyevich Banine , Johan Franciscus Maria Beckers , Madhusudhanan Jambunathan , Maxim Aleksandrovich Nasalevich , Andrey Nikipelov , Roland Johannes Wilhelmus Stas , David Ferdinand Vles , Wilhelmus Jacobus Johannes Welters , Sandro Wricke
Abstract: A sensor mark including: a substrate having: a deep ultra violet (DUV) radiation absorbing layer including a first material which substantially absorbs DUV radiation; and a protecting layer including a second material, wherein: the DUV radiation absorbing layer has a through hole in it; the protecting layer is positioned, in plan, in the through hole and the protecting layer in the through hole has a patterned region having a plurality of through holes; and the second material is more noble than the first material.
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公开(公告)号：US11977326B2
公开(公告)日：2024-05-07
申请号：US17048875
申请日：2019-04-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Dennis De Graaf , Richard Beaudry , Maxime Biron , Paul Janssen , Thijs Kater , Kevin Kornelsen , Michael Alfred Josephus Kuijken , Jan Hendrik Willem Kuntzel , Stephane Martel , Maxim Aleksandrovich Nasalevich , Guido Salmaso , Pieter-Jan Van Zwol
CPC classification number: G03F1/64 , G03F1/62 , G03F7/70983
Abstract: A wafer including a mask on one face and at least one layer on an opposite face, wherein the mask has at least one scribeline which overlies at least a portion of the opposite face which is substantially free of the at least one layer is described. Also described is a method of preparing a pellicle, the method including: providing a wafer having a mask on one face and at least one layer on an opposite face, defining a scribeline in the mask, and selectively removing a portion of the at least one layer which at least partially overlies the scribeline as well as a method of preparing a pellicle, the method including: providing a pellicle core, and removing at least some material from at least one face of the pellicle core in a non-oxidising environment. In any aspect, the pellicle may include a metal nitride layer.
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公开(公告)号：US11686997B2
公开(公告)日：2023-06-27
申请号：US17685988
申请日：2022-03-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter-Jan Van Zwol , Adrianus Johannes Maria Giesbers , Johan Hendrik Klootwijk , Evgenia Kurganova , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Leonid Aizikovitsj Sjmaenok , Ties Wouter Van Der Woord , David Ferdinand Vles
IPC: G03F1/62
CPC classification number: G03F1/62
Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
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公开(公告)号：US11467486B2
公开(公告)日：2022-10-11
申请号：US16969211
申请日：2019-02-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Evgenia Kurganova , Adrianus Johannes Maria Giesbers , Alexander Ludwig Klein , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Pieter-Jan Van Zwol , David Ferdinand Vles , Sten Vollebregt , Willem-Pieter Voorthuijzen
Abstract: A catalyst including: a first layer including a transition metal; a base layer; and an interlayer, wherein the interlayer is disposed between the base layer and the first layer is disclosed. Also disclosed are methods for preparing a catalyst as well as for synthesizing graphene, a pellicle produced using the catalyst or methods disclosed herein, as well as a lithography apparatus including such a pellicle.
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