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    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    11.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20130020584A1

    公开(公告)日：2013-01-24

    申请号：US13639199

    申请日：2010-04-22

    Applicant: Toshiyuki Oishi ,  Hiroshi Otsuka ,  Koji Yamanaka ,  Akira Inoue

    Inventor： Toshiyuki Oishi ,  Hiroshi Otsuka ,  Koji Yamanaka ,  Akira Inoue

    IPC: H01L29/78

    CPC classification number: H01L29/7787 ,  H01L29/0657 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/42316

    Abstract: In the present invention, provided is a semiconductor device, including: a GaN channel layer which is provided on a substrate and through which electrons run; a barrier layer which is provided on the GaN channel layer and which contains at least one of In, Al, and Ga and contains N; a gate electrode which is provided on the barrier layer; and a source electrode and a drain electrode which are provided on the substrate across the gate electrode, in which, in a portion of the barrier layer between the gate electrode and the drain electrode, a magnitude of polarization of the barrier layer is smaller on the gate electrode side than on the drain electrode side. Thus, PAE can be improved by reducing Rd and Cgd simultaneously.

    Abstract translation: 在本发明中，提供了一种半导体器件，包括：GaN沟道层，其设置在基板上，电子通过该沟道层运行; 阻挡层，其设置在所述GaN沟道层上并且包含In，Al和Ga中的至少一个并且包含N; 设置在所述阻挡层上的栅电极; 以及源极电极和漏电极，其设置在跨越栅电极的基板上，其中在栅电极和漏电极之间的阻挡层的一部分中，阻挡层的极化大小在 栅电极侧比漏极侧。 因此，通过同时减少Rd和Cgd可以改善PAE。

    EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME
    13.
    发明申请
    EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME 有权
    外延硅晶片及其制造方法

    公开(公告)号：US20120112319A1

    公开(公告)日：2012-05-10

    申请号：US13382674

    申请日：2010-07-01

    Applicant: Tadashi Kawashima ,  Masahiro Yoshikawa ,  Akira Inoue ,  Yoshiya Yoshida ,  Kazuhiro Iriguchi ,  Toshiyuki Isami

    Inventor： Tadashi Kawashima ,  Masahiro Yoshikawa ,  Akira Inoue ,  Yoshiya Yoshida ,  Kazuhiro Iriguchi ,  Toshiyuki Isami

    IPC: H01L29/36 ,  H01L21/20

    CPC classification number: H01L21/3221 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658

    Abstract: It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration to execute a baking treatment. After a surface layer of the silicon crystal substrate is then polished up to a predetermined amount, a silicon epitaxial layer is grown by a CVD method. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced.

    Abstract translation: 本发明的目的是提供一种在掺杂有磷（P）和锗（Ge）的硅晶体衬底的背面侧上形成多晶硅层的优异的吸气能力的外延硅晶片。 在已经以高浓度掺杂有磷和锗的硅晶体衬底的背面执行用于生长多晶硅层的PBS形成步骤，以进行烘烤处理。 然后将硅晶体衬底的表面层抛光至预定量之后，通过CVD法生长硅外延层。 通过上述步骤，可以大大减少由于SF而在外延硅晶片的表面上发生的LPD（由SF引起）的数量。

    EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME
    14.
    发明申请
    EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME 有权
    外延硅晶片及其制造方法

    公开(公告)号：US20120112190A1

    公开(公告)日：2012-05-10

    申请号：US13378562

    申请日：2010-05-28

    Applicant: Tadashi Kawashima ,  Masahiro Yoshikawa ,  Akira Inoue ,  Yoshiya Yoshida

    Inventor： Tadashi Kawashima ,  Masahiro Yoshikawa ,  Akira Inoue ,  Yoshiya Yoshida

    IPC: H01L29/04 ,  H01L21/20

    CPC classification number: H01L21/02532 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/3221

    Abstract: It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A silicon epitaxial layer is grown by a CVD method on the surface of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration. After that, a PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced.

    Abstract translation: 本发明的目的是提供一种在掺杂有磷（P）和锗（Ge）的硅晶体衬底的背面侧上形成多晶硅层的优异的吸气能力的外延硅晶片。 通过CVD法在硅晶体衬底的表面上以高浓度掺杂有磷和锗的方式生长硅外延层。 之后，在硅晶体基板的背面进行用于生长多晶硅层的PBS形成工序。 通过上述步骤，可以大大减少由于SF而在外延硅晶片的表面上发生的LPD（由SF引起）的数量。

    TEMPO DETECTION DEVICE, TEMPO DETECTION METHOD AND PROGRAM
    15.
    发明申请
    TEMPO DETECTION DEVICE, TEMPO DETECTION METHOD AND PROGRAM 失效
    TEMPO检测装置，温度检测方法和程序

    公开(公告)号：US20120024130A1

    公开(公告)日：2012-02-02

    申请号：US13190731

    申请日：2011-07-26

    Applicant: Shusuke TAKAHASHI ,  Akira Inoue

    Inventor： Shusuke TAKAHASHI ,  Akira Inoue

    IPC: G10H1/40

    CPC classification number: G10H1/40 ,  G10H1/0008 ,  G10H2210/076 ,  G10H2220/086 ,  G10H2250/031 ,  G10H2250/235

    Abstract: A tempo detection device includes: a basic feature amount extracting section which extracts a plurality of types of basic feature amounts from an input audio signal; a weighting and adding section which weights and adds the basic feature amounts of the plurality of types extracted in the basic feature amount extracting section to obtain an addition signal; and a tempo detecting section which detects BPM indicating the tempo on the basis of a periodic component included in the addition signal obtained in the weighting and adding section.

    Abstract translation: 速度检测装置包括：基本特征量提取部，其从输入音频信号中提取多种类型的基本特征量; 加权和加法部分，其加权并添加在基本特征量提取部分中提取的多个类型的基本特征量，以获得加法信号; 以及速度检测部分，其基于在加权和加法部分中获得的加法信号中包括的周期分量来检测指示速度的BPM。

    Image recognition system and recognition method thereof and program
    18.
    发明授权
    Image recognition system and recognition method thereof and program 有权
    图像识别系统及其识别方法及程序

    公开(公告)号：US08027522B2

    公开(公告)日：2011-09-27

    申请号：US12409623

    申请日：2009-03-24

    Applicant: Akira Inoue

    Inventor： Akira Inoue

    IPC: G06K9/00

    CPC classification number: G06K9/4647 ,  G06K9/00221 ,  G06K9/6232

    Abstract: A task is to correctly classify an input image regardless of a fluctuation in illumination and a state of occlusion of the input image.Input image sub-region extraction means 2 extracts a sub-region of the input image. Inter-pattern distance calculation means 3 calculates an inter-pattern distance between this sub-region and a sub-region of a registration image pre-filed in dictionary filing means 5 for each sub-region. Region distance value integration means 10 integrates the inter-pattern distances obtained for each sub-region. This is conducted for the registration image of each category. Identification means 4 finds a minimum value out of its integrated inter-pattern distances, and in the event that its minimum value is smaller than a threshold, outputs a category having its minimum distance as a recognition result.

    Abstract translation: 任务是对输入图像进行正确分类，而不管照明的波动和输入图像的遮挡状态如何。 输入图像子区域提取装置2提取输入图像的子区域。 图案间距离计算装置3计算该子区域与每个子区域在字典归档装置5中预先记录的登记图像的子区域之间的图案间距离。 区域距离值积分装置10对每个子区域获得的图案间距进行积分。 这是针对每个类别的注册图像进行的。 识别装置4从其集成的图案间距离中找到最小值，并且在其最小值小于阈值的情况下，输出具有其最小距离的类别作为识别结果。

    HYDROPHOBIC SILICA MICROPARTICLES AND COMPOSITION FOR ELECTROPHOTOGRAPHIC TONER
    19.
    发明申请
    HYDROPHOBIC SILICA MICROPARTICLES AND COMPOSITION FOR ELECTROPHOTOGRAPHIC TONER 审中-公开
    水印二氧化硅微电极及电致变色墨粉组合物

    公开(公告)号：US20110177446A1

    公开(公告)日：2011-07-21

    申请号：US12998238

    申请日：2009-07-29

    Applicant: Masanobu Kaneeda ,  Akira Inoue

    Inventor： Masanobu Kaneeda ,  Akira Inoue

    IPC: G03G9/08 ,  C01B33/12

    CPC classification number: G03G9/09716 ,  B82Y30/00 ,  C01B33/18 ,  C01P2004/53 ,  C01P2004/64 ,  C01P2006/12 ,  C09C1/3081 ,  G03G9/09725 ,  Y10T428/2982

    Abstract: Provided are silica microparticles having a fine primary particle size suitable for an external toner additive, the microparticles including no bulky agglomerated particles responsible for a decrease in dispersibility into toner and fluidity of toner. The microparticles are capable of preventing detachment from toner, and are superior in effects of imparting uniform dispersibility and fluidity, thereby preventing a white point on printed images from occurring. The silica microparticles are characterized in that the silica microparticles are produced using hexamethyl disilazane or organo-polysiloxane by carrying out hydrophobization of hydrophilic silica microparticles having an average primary particle size of from 20 to 100 nm produced by a gas phase method, and that a ratio of agglomerated particles having a particle size of 1.5 μm or more is less than a predetermined value by determining using laser diffractometry by a volume-based particle size measurement of the particle.

    Abstract translation: 提供具有适合于外部调色剂添加剂的微细的一次粒径的二氧化硅微粒，所述微粒不包括负责降低对调色剂的分散性和调色剂的流动性的体积大的聚集颗粒。 微粒能够防止与调色剂分离，并且赋予均匀的分散性和流动性的效果优异，从而防止印刷图像上的白点发生。 二氧化硅微粒的特征在于，使用六甲基二硅氮烷或有机聚硅氧烷，通过气相法制造的平均一次粒径为20〜100nm的亲水性二氧化硅微粒进行疏水化，二氧化硅微粒的特征在于， 通过使用激光衍射法，通过粒子的基于体积的粒度测量来确定粒径为1.5μm以上的凝集粒子的粒径小于规定值。

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