公开(公告)号：US09460959B1

公开(公告)日：2016-10-04

申请号：US14958459

申请日：2015-12-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin Xie ,  Feng Q. Liu ,  Daping Yao ,  Alexander Jansen ,  Joung Joo Lee ,  Adolph Miller Allen ,  Xianmin Tang ,  Mei Chang

IPC: B08B6/00 ,  H01L21/768 ,  B08B7/00 ,  B08B3/00 ,  B08B5/00 ,  B08B9/00 ,  B08B9/027

CPC classification number: H01L21/02068 ,  B08B3/00 ,  B08B3/106 ,  B08B5/00 ,  B08B7/0035 ,  B08B9/00 ,  B08B9/027 ,  C23G1/24 ,  F01D5/005 ,  F05D2230/90 ,  H01L21/02063 ,  H01L21/76814

Abstract: Methods for processing a substrate are provided herein. In some embodiments, method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt % of an alcohol to reduce a contaminated surface of the conductive material.

Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，处理衬底的方法包括：将设置在衬底处理室的处理体积内的衬底加热到​​高达约400摄氏度的温度，其中衬底包括第一表面，相对的第二表面和 开口形成在第一表面中并且朝向相对的第二表面延伸，并且其中第二表面包括设置在第二表面中并与开口对准的导电材料; 以及将基底暴露于包含约80至约100重量％的醇的工艺气体中以减少导电材料的污染表面。

公开(公告)号：US10752990B2

公开(公告)日：2020-08-25

申请号：US15471291

申请日：2017-03-28

Applicant: Applied Materials, Inc.

Inventor： Daping Yao ,  Kenric Choi ,  Xiaoxiong Yuan ,  Jiang Lu ,  Can Xu ,  Paul F. Ma ,  Mei Chang

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/448 ,  C23C16/18 ,  F16K31/12 ,  F16K31/60

Abstract: Apparatus and methods for supplying a gas to a processing chamber are described. The apparatus comprises an inlet line and an outlet line, each with two valves, in fluid communication an ampoule. A bypass line connects the inlet valve and outlet valve closest to the ampoule. The apparatus and methods of use allow a precursor residue to be removed from the delivery lines of a processing chamber.

公开(公告)号：US10283345B2

公开(公告)日：2019-05-07

申请号：US15280161

申请日：2016-09-29

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin Xie ,  Feng Q. Liu ,  Daping Yao ,  Alexander Jansen ,  Joung Joo Lee ,  Adolph Miller Allen ,  Xianmin Tang ,  Mei Chang

IPC: B08B7/00 ,  H01L21/02 ,  H01L21/768 ,  B08B5/00 ,  B08B9/027 ,  B08B3/00 ,  B08B9/00 ,  B08B3/10 ,  C23G1/24 ,  F01D5/00

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt. % of an alcohol to reduce a contaminated surface of the conductive material.

公开(公告)号：US20180250695A1

公开(公告)日：2018-09-06

申请号：US15910398

申请日：2018-03-02

Applicant: Applied Materials, Inc.

Inventor： Kenric Choi ,  Xiaoxiong Yuan ,  Daping Yao ,  Mei Chang

IPC: B05B7/24 ,  B65D1/09 ,  B05B7/00

CPC classification number: B05B7/2491 ,  B05B7/0075 ,  B65D1/09 ,  C23C16/448 ,  H01L21/67017 ,  H01L21/68

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The inlet port has a showerhead that the end within the container. The showerhead has at least two angled nozzles to direct the flow of gas within the cavity so that the gas flow is not perpendicular to the surface of a liquid within the ampoule.