DETERMINING SUBSTRATE PRECESSION WITH ACOUSTIC SIGNALS

    公开(公告)号:US20230390885A1

    公开(公告)日:2023-12-07

    申请号:US17963143

    申请日:2022-10-10

    CPC classification number: B24B37/005 G01H11/08

    Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, a carrier head to hold a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate, an in-situ acoustic monitoring system comprising an acoustic sensor that receives acoustic signals from the surface of the substrate, and a controller configured to determine an angular orientation of the substrate based on received acoustic signals from the in-situ acoustic monitoring system.

    PREDICTIVE FILTER FOR POLISHING PAD WEAR RATE MONITORING

    公开(公告)号:US20190143475A1

    公开(公告)日:2019-05-16

    申请号:US16191263

    申请日:2018-11-14

    Abstract: An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a pad conditioner to hold a conditioning disk against the polishing surface, an in-situ polishing pad thickness monitoring system; and, a controller configured to receive a signal from the monitoring system and generate a measure of polishing pad wear rate by applying a predictive filter to the signal.

    POLISHING WITH MEASUREMENT PRIOR TO DEPOSITION OF OUTER LAYER
    17.
    发明申请
    POLISHING WITH MEASUREMENT PRIOR TO DEPOSITION OF OUTER LAYER 审中-公开
    在外层沉积之前进行抛光

    公开(公告)号:US20160284615A1

    公开(公告)日:2016-09-29

    申请号:US15173584

    申请日:2016-06-03

    Abstract: A method of controlling polishing includes storing a base measurement, the base measurement being a measurement of a substrate after deposition of at least one layer overlying a semiconductor wafer and before deposition of an outer layer over the at least one layer, after deposition of the outer layer over the at least one layer and during polishing of the outer layer on substrate, receiving a sequence of raw measurements of the substrate from an in-situ monitoring system, normalizing each raw measurement in the sequence of raw measurement to generate a sequence of normalized measurements using the raw measurement and the base measurement, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on at least the sequence of normalized measurements.

    Abstract translation: 控制抛光的方法包括存储基底测量,所述基底测量是沉积覆盖在半导体晶片上的至少一个层之后并且在外层沉积外层之后在所述至少一个层上沉积之后的衬底的测量值 层,并且在衬底上的外层的抛光期间,从原位监测系统接收衬底的原始测量序列,对原始测量序列中的每个原始测量进行归一化,以生成标准化的序列 使用原始测量和基础测量的测量,以及至少基于归一化测量的顺序来确定抛光终点或抛光速率的调整中的至少一个。

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