公开(公告)号：US20160068712A1

公开(公告)日：2016-03-10

申请号：US14891175

申请日：2014-05-05

Applicant: BASF SE

Inventor： Yongqing LAN ,  Peter PRZYBYLSKI ,  Zhenyu BAO ,  Julian PROELSS

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30612 ,  H01L21/30625

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

Abstract translation: 描述了一种化学机械抛光（CMP）组合物，其包含以下组分：（A）在pH为2至6（B）的范围内具有-15mV或更低的ζ电位的表面改性二氧化硅颗粒，或 更多的聚乙烯亚胺（C）水（D）任选地一种或多种另外的组分，其中组合物的pH在2至6的范围内。

公开(公告)号：US20150380263A1

公开(公告)日：2015-12-31

申请号：US14768825

申请日：2014-05-05

Applicant: BASF SE

Inventor： Yongqing LAN ,  Peter PRZYBYLSKI ,  Zhenyu BAO ,  Julian PROELSS

IPC: H01L21/306 ,  C09G1/02

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/32115 ,  H01L21/3212

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more polymers selected from the group consisting of N-vinyl-homopolymers and N-vinyl copolymers (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

Abstract translation: 描述了一种化学机械抛光（CMP）组合物，其包含以下组分：（A）在pH为2至6（B）的范围内具有-15mV或更低的ζ电位的表面改性二氧化硅颗粒，或 选自N-乙烯基均聚物和N-乙烯基共聚物（C）水（D）中的更多聚合物任选地一种或多种其它组分，其中组合物的pH在2-6范围内。

公开(公告)号：US20220064485A1

公开(公告)日：2022-03-03

申请号：US17312807

申请日：2019-12-11

Applicant: BASF SE

Inventor： Haci Osman GUEVENC ,  Michael LEUTER ,  WEI Taoyuan ,  Wei Lan CHIU ,  Reza M. GOLZARIAN ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/321

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：US20200299547A1

公开(公告)日：2020-09-24

申请号：US16765665

申请日：2018-11-12

Applicant: BASF SE

Inventor： Christian DAESCHLEIN ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza M GOLZARIAN ,  Te Yu WEI ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  H01L21/321

Abstract: The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) composition comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.

公开(公告)号：US20190002802A1

公开(公告)日：2019-01-03

申请号：US16064686

申请日：2016-12-20

Applicant: BASF SE

Inventor： Christian DAESCHLEIN ,  Max SIEBERT ,  Michael LAUTER ,  Piotr PRZYBYLSKI ,  Julian PROELSS ,  Andreas KLIPP ,  Haci Osman GUEVENC ,  Leonardus LEUNISSEN ,  Roelf-Peter BAUMANN ,  Te Yu WEI

IPC: C11D7/26 ,  C11D7/32 ,  C11D3/00 ,  H01L21/321 ,  H01L21/02

Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more nonionic polymers selected from the group consisting of poly-acrylamides, polyhydroxyethyl(meth)acrylates (PHE(M)A), polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polymers of formula (I), and mixtures thereof, wherein R1 is hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, or sec-butyl, R2 is hydrogen or methyl, and n is an integer, (B) poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.

公开(公告)号：US20180371371A1

公开(公告)日：2018-12-27

申请号：US16064918

申请日：2016-12-20

Applicant: BASF SE

Inventor： Christian DAESCHLEIN ,  Max SIEBERT ,  Michael LAUTER ,  Peter PRZYBYLSKI ,  Julian PROELSS ,  Andreas KLIPP ,  Haci Osman GUEVENC ,  Leonardus LEUNISSEN ,  Roelf-Peter BAUMANN ,  Te Yu WEI

IPC: C11D3/37 ,  C11D3/00 ,  C11D11/00

Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition including: (A) polyethylene glycol (PEG) with a mass average molar mass (Mw) in the range of from 400 to 8,000 g/mol, (B) an anionic polymer selected from poly(acrylic acid) (PAA), acrylic acid-maleic acid copolymers, polyaspartic acid (PASA), polyglutamic acid (PGA), polyvinylphosphonic acid, polyvinylsulfonic acid, poly(styrenesulfonic acid), polycarboxylate ethers (PCE), PEG-phosphorous acids, and copolymers of the polymers thereof, and (C) water, where the pH of the composition is from 7.0 to 10.5.

公开(公告)号：US20170369741A1

公开(公告)日：2017-12-28

申请号：US15538334

申请日：2015-12-11

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Max SIEBERT ,  Yongqing LAN ,  Michael LAUTER ,  Sheik Ansar USMAN IBRAHIM ,  Reza GOLZARIAN ,  Haci Osman GUEVENC ,  Julian PROELSS ,  Leonardus LEUNISSEN

IPC: C09G1/02 ,  C09G1/04 ,  C09K13/00 ,  H01L21/461

CPC classification number: C09G1/02 ,  C09G1/04 ,  C09K13/00 ,  H01L21/461

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a triazine derivative of the general formula (I) wherein R1, R2, R3, R4, R5 and R6 are independently from each other H, methyl, ethyl, propyl, butyl, pentyl, C2-C10-alkylcarboxylic acid, hydroxymethyl, vinyl or allyl (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.