ARRAY SUBSTRATE, DISPLAY APPARATUS, AND METHOD OF FABRICATING ARRAY SUBSTRATE

    公开(公告)号:US20240088170A1

    公开(公告)日:2024-03-14

    申请号:US18518526

    申请日:2023-11-23

    CPC classification number: H01L27/124 H01L27/1251 H01L27/127

    Abstract: An array substrate including a display area having a plurality of subpixels is provided. The plurality of subpixels includes a plurality of first subpixels in a display-bonding sub-area and a plurality of second subpixels in a regular display sub-area. The array substrate includes a plurality of thin film transistors on a first side of the base substrate and respectively in the plurality of subpixels. A respective one of the plurality of first subpixels includes a bonding pad on a second side of a base substrate; a lead line electrically connecting a respective one of a plurality of thin film transistors to the bonding pad; and a via extending through the base substrate. The lead line is unexposed in the array substrate. The lead line extends from the first side to the second side of the base substrate through the via, to connect to the bonding pad.

    Light-emitting unit and method for manufacturing the same

    公开(公告)号:US11527676B2

    公开(公告)日:2022-12-13

    申请号:US16760475

    申请日:2019-10-29

    Abstract: A light-emitting unit and a method for manufacturing the same are provided. The light-emitting unit includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer that are distributed in a stacking manner. At least one of the first semiconductor layer or the second semiconductor layer is at least in contact with a part of layer surfaces and a part of side of the light-emitting layer, the first semiconductor layer is insulated from the second semiconductor layer, and one of the first semiconductor layer and the second semiconductor layer is an N-type semiconductor layer, and the other is a P-type semiconductor layer. The present disclosure is conducive to increasing the light-emitting area and the light extraction efficiency of the light-emitting unit.

    Semiconductor Apparatus, Pixel Circuit and Control Method Thereof

    公开(公告)号:US20210233467A1

    公开(公告)日:2021-07-29

    申请号:US16767351

    申请日:2019-12-18

    Abstract: The present application discloses a semiconductor apparatus, a pixel circuit and a control method thereof. The semiconductor apparatus comprises: an active layer; a first insulating layer; a first gate and a second gate overlapping with a portion of the active layer with the first insulating layer interposed therebetween, respectively; a first electrode, a second electrode and a third electrode, the first electrode and the second electrode are electrically connected with a first portion and a second portion of the active layer, respectively, the third electrode is used to be electrically connected with a photosensitive device, wherein the third electrode is electrically connected with the first gate or the second gate; or the third electrode is electrically connected with a third portion of the active layer.

    LIGHT-EMITTING UNIT AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20210226091A1

    公开(公告)日:2021-07-22

    申请号:US16760475

    申请日:2019-10-29

    Abstract: A light-emitting unit and a method for manufacturing the same are provided. The light-emitting unit includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer that are distributed in a stacking manner. At least one of the first semiconductor layer or the second semiconductor layer is at least in contact with a part of layer surfaces and a part of side of the light-emitting layer, the first semiconductor layer is insulated from the second semiconductor layer, and one of the first semiconductor layer and the second semiconductor layer is an N-type semiconductor layer, and the other is a P-type semiconductor layer. The present disclosure is conducive to increasing the light-emitting area and the light extraction efficiency of the light-emitting unit.

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