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101 records (took 0.02 seconds)

    Mouse
    12.
    外观设计
    Mouse 有权
    老鼠

    公开(公告)号：USD644226S1

    公开(公告)日：2011-08-30

    申请号：US29387402

    申请日：2011-03-11

    Applicant: Chih-Chung Chen

    Designer： Chih-Chung Chen

    Memory system which copies successive pages, and data copy method therefor
    18.
    发明授权
    Memory system which copies successive pages, and data copy method therefor 有权
    用于复制连续页面的内存系统及其数据复制方法

    公开(公告)号：US07372744B2

    公开(公告)日：2008-05-13

    申请号：US11216215

    申请日：2005-09-01

    Applicant: Hitoshi Shiga ,  Chih-Chung Chen ,  Chih-Hung Wang ,  Sheng-Lin Hung

    Inventor： Hitoshi Shiga ,  Chih-Chung Chen ,  Chih-Hung Wang ,  Sheng-Lin Hung

    IPC: G11C7/10

    CPC classification number: G11C16/102 ,  G11C16/0483 ,  G11C16/26 ,  G11C2207/2236 ,  G11C2216/14

    Abstract: A memory system includes a memory cell array, a bit line switch, first and second page buffers, a column switch, an error correction circuit, and control circuits. The second page buffer can swap data with the first page buffer. The control circuits controls the bit line switch and the first and second page buffers, sequentially reads, page by page, one or more pages from the mth (m is a positive integer) page to the nth (n is an integer greater than m) page of the first block in the memory cell array, controls the error correction circuit to perform error correction calculation by the error correction circuit, controls the first and second data buffers and the bit line switch, and controls to perform write in the second block in the erase state in the memory cell array.

    Abstract translation: 存储器系统包括存储单元阵列，位线开关，第一和第二页缓冲器，列开关，纠错电路和控制电路。 第二页缓冲区可以与第一页缓冲区交换数据。 控制电路控制位线开关，第一和第二页缓冲器逐页依次读取从第m（m为正整数）页到第n（n为大于m的整数）的一页或多页， 控制误差校正电路进行误差校正电路的误差校正计算，控制第一和第二数据缓冲器和位线开关，并控制在第二块中执行写入 存储单元阵列中的擦除状态。

    Electrical contact device of probe card
    19.
    发明申请
    Electrical contact device of probe card 有权
    探针卡电接触器

    公开(公告)号：US20070045535A1

    公开(公告)日：2007-03-01

    申请号：US11505407

    申请日：2006-08-17

    Applicant: Chih-Chung Chen

    Inventor： Chih-Chung Chen

    IPC: G21K7/00

    CPC classification number: G01R1/06761 ,  G01R1/06727 ,  Y10T29/49155

    Abstract: An electrical contact device of a probe card includes a base and probes on the base. The base has a top side with a cavity thereon, and the cavity has sidewalls connected to the top side. Anchored portion are provided on the sidewalls of the cavity. Each of the probes has a first end and a second end, wherein the first end is connected to the anchored portion, and the second end is extended toward the cavity respectively.

    Abstract translation: 探针卡的电接触装置包括底座和底座上的探头。 底座具有顶部，其上具有空腔，并且腔体具有连接到顶侧的侧壁。 锚固部分​​设置在空腔的侧壁上。 每个探针具有第一端和第二端，其中第一端连接到锚定部分，并且第二端分别朝向空腔延伸。

    Memory system which copies successive pages, and data copy method therefor
    20.
    发明申请
    Memory system which copies successive pages, and data copy method therefor 有权
    用于复制连续页面的内存系统及其数据复制方法

    公开(公告)号：US20060050314A1

    公开(公告)日：2006-03-09

    申请号：US11216215

    申请日：2005-09-01

    Applicant: Hitoshi Shiga ,  Chih-Chung Chen ,  Chih-Hung Wang ,  Sheng-Lin Hung

    Inventor： Hitoshi Shiga ,  Chih-Chung Chen ,  Chih-Hung Wang ,  Sheng-Lin Hung

    IPC: G06K15/00

    CPC classification number: G11C16/102 ,  G11C16/0483 ,  G11C16/26 ,  G11C2207/2236 ,  G11C2216/14

    Abstract: A memory system includes a memory cell array, a bit line switch, first and second page buffers, a column switch, an error correction circuit, and control circuits. The second page buffer can swap data with the first page buffer. The control circuits controls the bit line switch and the first and second page buffers, sequentially reads, page by page, one or more pages from the mth (m is a positive integer) page to the nth (n is an integer greater than m) page of the first block in the memory cell array, controls the error correction circuit to perform error correction calculation by the error correction circuit, controls the first and second data buffers and the bit line switch, and controls to perform write in the second block in the erase state in the memory cell array.

    Abstract translation: 存储器系统包括存储单元阵列，位线开关，第一和第二页缓冲器，列开关，纠错电路和控制电路。 第二页缓冲区可以与第一页缓冲区交换数据。 控制电路控制位线开关，第一和第二页缓冲器逐页依次读取从第m（m为正整数）页到第n（n为大于m的整数）的一页或多页， 控制误差校正电路进行误差校正电路的误差校正计算，控制第一和第二数据缓冲器和位线开关，并控制在第二块中执行写入 存储单元阵列中的擦除状态。

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