公开(公告)号：US10039952B2

公开(公告)日：2018-08-07

申请号：US15490310

申请日：2017-04-18

Applicant: Chung-Fu Chang

Inventor： Chung-Fu Chang

IPC: A63B22/02

Abstract: A treadmill having a curved treadmill deck is provided. Two curved side frames are disposed at two sides of the treadmill frame. Front and rear end ends of each curved side frame are higher than a middle section thereof. Inner sides of the two curved side frames are provided with a plurality of fixing seats, respectively. The fixing seats have fixing holes, respectively. An elastic deck is composed of a plurality of sheets connected side by side. The sheets each have perforations corresponding in position to the fixing holes of the respective fixing seats. A plurality of fixing pins are inserted in the perforations of the sheets of the elastic deck and secured to the fixing holes of the fixing seats. The elastic deck is forcibly fastened by the fixing pins and slightly deformed according to the curvature of the curved side frames to form the curved treadmill deck.

公开(公告)号：US10039951B2

公开(公告)日：2018-08-07

申请号：US15475375

申请日：2017-03-31

Applicant: Chung-Fu Chang

Inventor： Chung-Fu Chang

IPC: A63B22/06 ,  A63B69/16 ,  A63B22/00 ,  A63B23/035 ,  A63B21/00

Abstract: A horse riding exercise machine is not only compact in structure but also easy to be assembled and disassembled. When in use, a second N-shaped connecting rod and/or a return member are provided to achieve a labor-saving effect for exercise. Through a compact structure and the detachable connection of a bolt, when the horse riding exercise machine is not used, the bolt can be loosened so that a rear support base can be pushed toward a front support base to close up, thereby reducing the storage space to facilitate the storage.

公开(公告)号：US20170274237A1

公开(公告)日：2017-09-28

申请号：US15460332

申请日：2017-03-16

Applicant: Chung-Fu Chang

Inventor： Chung-Fu Chang

IPC: A63B21/00 ,  A63B22/06 ,  A63B21/22 ,  A63B22/02 ,  A63B21/005 ,  A63B21/008

CPC classification number: A63B21/00069 ,  A63B21/005 ,  A63B21/0088 ,  A63B21/154 ,  A63B21/225 ,  A63B22/02 ,  A63B22/0605 ,  A63B2071/0081

Abstract: An exercise machine having a changeable damping mechanism is provided. A first transmission rope on a first shifting wheel of a first rotating shaft drives a damping device of a damping shaft to generate a relative damping action for training the leg muscular endurance of the user. Through a first changeable damping mechanism, the first transmission rope, which having stretch elasticity on the first shifting wheel is controlled to adjust the rotational speed according to the gear ratio, which may be in cooperation with a second transmission rope, which having stretch elasticity on a second shifting wheel through a second changeable damping mechanism, and is in cooperation with the damping action of a magnetic control wheel or a blower fan of the damping device to extend the range of damping control for different users to train muscular endurance.

公开(公告)号：US20130316506A1

公开(公告)日：2013-11-28

申请号：US13479279

申请日：2012-05-24

Applicant: Chung-Fu Chang ,  Yu-Hsiang Hung ,  Shin-Chuan Huang ,  Chia-Jong Liu ,  Yen-Liang Wu ,  Pei-Yu Chou

Inventor： Chung-Fu Chang ,  Yu-Hsiang Hung ,  Shin-Chuan Huang ,  Chia-Jong Liu ,  Yen-Liang Wu ,  Pei-Yu Chou

IPC: H01L21/336

CPC classification number: H01L21/823425 ,  H01L21/823412 ,  H01L21/823468 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864

Abstract: A semiconductor process includes the following steps. A gate structure is formed on a substrate. A main spacer is formed on the substrate beside the gate structure. A source/drain is formed in the substrate beside the main spacer. After the source/drain is formed, an epitaxial structure is formed in the substrate beside the main spacer. A gate structure may be respectively formed in a first area and a second area of a substrate. A main spacer is formed on the substrate respectively beside the two gate structures. A source/drain is formed in the substrate respectively beside the two spacers. After the two source/drains are formed, an epitaxial structure is formed in the substrate respectively beside the main spacers.

Abstract translation: 半导体工艺包括以下步骤。 在基板上形成栅极结构。 在栅极结构旁边的基板上形成主间隔物。 源极/漏极形成在主间隔物旁边的衬底中。 在形成源极/漏极之后，在主间隔物旁边的衬底中形成外延结构。 栅极结构可以分别形成在衬底的第一区域和第二区域中。 在衬底上分别在两个栅极结构旁边形成主间隔物。 源极/漏极分别在两个间隔物的旁边的衬底中形成。 在形成两个源极/漏极之后，在主衬垫的旁边分别在衬底中形成外延结构。

公开(公告)号：US10799748B2

公开(公告)日：2020-10-13

申请号：US16192710

申请日：2018-11-15

Applicant: Chung-Fu Chang

Inventor： Chung-Fu Chang

IPC: A63B21/06 ,  A63B22/06 ,  A63B21/00 ,  A61H1/00 ,  A63B21/22

Abstract: An interacting exercise device is revealed. The interacting exercise device includes a driving device and a non-concentric actuator driven by the driving device. While the driving device is operated to rotate, the non-concentric actuator vibrates and the vibration generated is delivered to the interacting exercise device for interacting shaking fitness.

公开(公告)号：US10668323B2

公开(公告)日：2020-06-02

申请号：US15860068

申请日：2018-01-02

Applicant: Chung-Fu Chang

Inventor： Chung-Fu Chang

IPC: A63B22/18 ,  B06B1/16 ,  F16H19/04 ,  A63B22/06 ,  F16H1/06 ,  F16H7/02 ,  F16H1/00

Abstract: A pedaling vibrational apparatus includes a seat body, a pedal assembly, a gear plate assembly, a drive assembly and an eccentric assembly, like a lever structure. By treading the pedal assembly, the gear plate assembly drives the drive assembly to rotate. The drive assembly is connected with the eccentric assembly. A user can fully exercise muscles of the user's body during exercise, and a vibrational effect generated by the eccentric assembly can stimulate acupuncture points of the user's body to improve blood circulation. Left and right pedals of the pedal assembly can be treaded in turn to continuously drive a gear to rotate in a same direction so as to achieve an effect of acceleration and to enhance vibrations.

公开(公告)号：US20170340917A1

公开(公告)日：2017-11-30

申请号：US15490310

申请日：2017-04-18

Applicant: Chung-Fu Chang

Inventor： Chung-Fu Chang

IPC: A63B22/02

CPC classification number: A63B22/0285 ,  A61H7/007 ,  A61H39/04 ,  A61H2201/1284 ,  A61H2201/1695 ,  A63B22/02 ,  A63B22/0207 ,  A63B22/0235 ,  A63B22/0242 ,  B32B3/10 ,  B32B3/14 ,  B32B3/18 ,  B32B3/22 ,  B32B9/02 ,  B32B9/04

Abstract: A treadmill having a curved treadmill deck is provided. Two curved side frames are disposed at two sides of the treadmill frame. Front and rear end ends of each curved side frame are higher than a middle section thereof. Inner sides of the two curved side frames are provided with a plurality of fixing seats, respectively. The fixing seats have fixing holes, respectively. An elastic deck is composed of a plurality of sheets connected side by side. The sheets each have perforations corresponding in position to the fixing holes of the respective fixing seats. A plurality of fixing pins are inserted in the perforations of the sheets of the elastic deck and secured to the fixing holes of the fixing seats. The elastic deck is forcibly fastened by the fixing pins and slightly deformed according to the curvature of the curved side frames to form the curved treadmill deck.

公开(公告)号：US20160184625A1

公开(公告)日：2016-06-30

申请号：US14813365

申请日：2015-07-30

Applicant: Chung-Fu Chang

Inventor： Chung-Fu Chang

IPC: A63B22/02 ,  B32B5/02 ,  B32B21/10

CPC classification number: A63B22/0214 ,  B32B3/18 ,  B32B5/022 ,  B32B5/024 ,  B32B7/005 ,  B32B7/12 ,  B32B9/02 ,  B32B9/04 ,  B32B9/042 ,  B32B9/045 ,  B32B9/047 ,  B32B21/042 ,  B32B27/08 ,  B32B2307/546 ,  B32B2307/56 ,  B32B2307/744

Abstract: A buffer board structure of a treadmill includes bamboo layers made by attaching bamboo sheets side by side, a bottom surface of which is adhered by a membrane layer whereby the bamboo sheets are firmly stuck on the membrane layer. Each membrane layer has an upper and lower faces respectively stuck between the bamboo layers. The bamboo sheets of each bamboo layer face the same juxtaposing direction, whereas bamboo layers juxtaposed lengthways provide a better buffer. By setting one membrane layer between two bamboo layers, contact faces of the bamboo layers and the membrane layer adhered together become smoother, and an adhesive fills in a gap more evenly. A slip resistant layer is stuck on the top bamboo layer. A smoother buffering effect and a stable juxtaposition are obtained when the bamboo layers are trodden to prevent the breakdown of buffer relations between the bamboo sheets and the membrane layers.

Abstract translation: 跑步机的缓冲板结构包括通过将竹片并排安装而形成的竹层，其底表面被膜层粘附，由此竹片牢固地粘附在膜层上。 每个膜层上面和下面分别粘在竹层之间。 每个竹层的竹片面相同并置方向，而竹层纵长并列提供了更好的缓冲。 通过在两个竹层之间设置一个膜层，竹层的接触面和粘附在一起的膜层变得更平滑，并且粘合剂更均匀地填充间隙。 防滑层粘在顶层竹层上。 当竹层被踩踏以防止竹片与膜层之间的缓冲关系的破坏时，获得更平缓的缓冲效果和稳定的并置。

公开(公告)号：US08772120B2

公开(公告)日：2014-07-08

申请号：US13479279

申请日：2012-05-24

Applicant: Chung-Fu Chang ,  Yu-Hsiang Hung ,  Shin-Chuan Huang ,  Chia-Jong Liu ,  Yen-Liang Wu ,  Pei-Yu Chou

Inventor： Chung-Fu Chang ,  Yu-Hsiang Hung ,  Shin-Chuan Huang ,  Chia-Jong Liu ,  Yen-Liang Wu ,  Pei-Yu Chou

IPC: H01L21/336

CPC classification number: H01L21/823425 ,  H01L21/823412 ,  H01L21/823468 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864

Abstract: A semiconductor process includes the following steps. A gate structure is formed on a substrate. A main spacer is formed on the substrate beside the gate structure. A source/drain is formed in the substrate beside the main spacer. After the source/drain is formed, an epitaxial structure is formed in the substrate beside the main spacer. A gate structure may be respectively formed in a first area and a second area of a substrate. A main spacer is formed on the substrate respectively beside the two gate structures. A source/drain is formed in the substrate respectively beside the two spacers. After the two source/drains are formed, an epitaxial structure is formed in the substrate respectively beside the main spacers.

Abstract translation: 半导体工艺包括以下步骤。 在基板上形成栅极结构。 在栅极结构旁边的基板上形成主间隔物。 源极/漏极形成在主间隔物旁边的衬底中。 在形成源极/漏极之后，在主间隔物旁边的衬底中形成外延结构。 栅极结构可以分别形成在衬底的第一区域和第二区域中。 在衬底上分别在两个栅极结构旁边形成主间隔物。 源极/漏极分别在两个间隔物的旁边的衬底中形成。 在形成两个源极/漏极之后，在主衬垫的旁边分别在衬底中形成外延结构。

公开(公告)号：US20130089962A1

公开(公告)日：2013-04-11

申请号：US13270240

申请日：2011-10-11

Applicant: Chung-Fu Chang ,  Shin-Chuan Huang ,  Yu-Hsiang Hung ,  Chia-Jong Liu ,  Pei-Yu Chou ,  Jyh-Shyang Jenq ,  Ling-Chun Chou ,  I-Chang Wang ,  Ching-Wen Hung ,  Ted Ming-Lang Guo ,  Chun-Yuan Wu

Inventor： Chung-Fu Chang ,  Shin-Chuan Huang ,  Yu-Hsiang Hung ,  Chia-Jong Liu ,  Pei-Yu Chou ,  Jyh-Shyang Jenq ,  Ling-Chun Chou ,  I-Chang Wang ,  Ching-Wen Hung ,  Ted Ming-Lang Guo ,  Chun-Yuan Wu

IPC: H01L21/336

CPC classification number: H01L29/6656 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7834

Abstract: A semiconductor process includes the following steps. A substrate is provided. A gate structure is formed on the substrate. A spacer is formed on the substrate beside the gate structure. The spacer includes a first spacer and a second spacer located on the external surface of the first spacer. A first etching process is performed to etch and form at least a recess in the substrate beside the spacer and entirely remove the second spacer. The etching rate of the first etching process to the first spacer is lower than the etching rate of the first etching process to the second spacer. An epitaxial layer is formed in the recess.

Abstract translation: 半导体工艺包括以下步骤。 提供基板。 栅极结构形成在衬底上。 在栅极结构旁边的衬底上形成间隔物。 间隔件包括第一间隔件和位于第一间隔件的外表面上的第二间隔件。 执行第一蚀刻工艺以蚀刻并在衬垫旁边的至少一个衬底中形成凹槽，并且完全除去第二间隔物。 第一蚀刻工艺对第一间隔物的蚀刻速率低于第一蚀刻工艺对第二间隔物的蚀刻速率。 在凹部中形成外延层。