公开(公告)号：US20070057687A1

公开(公告)日：2007-03-15

申请号：US10560205

申请日：2004-06-07

Applicant: Alexander Kadyshevitch ,  Dmitry Shur ,  Christopher Talbot

Inventor： Alexander Kadyshevitch ,  Dmitry Shur ,  Christopher Talbot

IPC: G01R31/26

CPC classification number: G01R31/2831 ,  G01R31/307

Abstract: A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.

Abstract translation: 一种用于晶片检查的方法和装置。 该设备能够测试具有至少部分导电的第一层的样品，以及在第二层中形成接触开口之后在第一层上形成的第二介电层，该设备包括：（i）电子束 源适于引导大电流的带电粒子束同时在分布在样品区域上的多个位置同时照射大量的接触开口; （ii）电流测量装置，适于响​​应于多个位置处的大量接触开口的照射来测量流过第一层的样品电流; 和（iii）适于响应于测量提供至少有缺陷的孔的指示的控制器。

公开(公告)号：US20060113471A1

公开(公告)日：2006-06-01

申请号：US11181659

申请日：2005-07-13

Applicant: Alexander Kadyshevitch ,  Christopher Talbot ,  Dmitry Shur ,  Andreas Hegedus

Inventor： Alexander Kadyshevitch ,  Christopher Talbot ,  Dmitry Shur ,  Andreas Hegedus

IPC: G21K7/00

CPC classification number: H01J37/32935 ,  G01N23/00 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/3011

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.