公开(公告)号：US06646302B2

公开(公告)日：2003-11-11

申请号：US09911378

申请日：2001-07-25

Applicant: Edwin C. Kan ,  Zengtao Liu ,  Venkatasubraman Narayanan

Inventor： Edwin C. Kan ,  Zengtao Liu ,  Venkatasubraman Narayanan

IPC: H01L29788

CPC classification number: B82Y10/00 ,  H01L21/2855 ,  H01L29/42332

Abstract: Low resistance metal/semiconductor and metal/insulator contacts incorporate metal nanocrystals embedded in another metal having a different work function. The contacts are fabricated by placing a wetting layer of a first metal on a substrate, which may be a semiconductor or an insulator and then heating to form nanocrystals on the semiconductor or insulator surface. A second metal having a different work function than the first is then deposited on the surface so that the nanocrystals are embedded in the second material.