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公开(公告)号：US20190181040A1
公开(公告)日：2019-06-13
申请号：US15834151
申请日：2017-12-07
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Minghao Tang , Rui Chen , Yuping Ren
IPC: H01L21/768 , H01L21/033
Abstract: Methods of fabricating an interconnect structure. A first sacrificial layer is deposited over a dielectric layer, and a block mask is formed that covers an area on the first sacrificial layer. A second sacrificial layer is deposited over the block mask and the first sacrificial layer. After the block mask is formed, the second sacrificial layer is patterned to form a mandrel that is arranged in part on a portion of the block mask.
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