公开(公告)号：US20190172832A1

公开(公告)日：2019-06-06

申请号：US15830671

申请日：2017-12-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ming-Cheng Chang ,  Nigel Chan ,  Ralf Van Bentum

IPC: H01L27/11 ,  H01L21/8238 ,  H01L29/423 ,  H01L27/092 ,  H01L27/02

Abstract: A method of forming a finFET SRAM and related device, are provided. Embodiments include forming a plurality of silicon fins in a substrate; and forming a gate over each of the fins, wherein all of the fins are diagonally skewed in a single direction relative to the gates, and all of the gates extend in a single direction relative to the respective fins.

公开(公告)号：US09748236B1

公开(公告)日：2017-08-29

申请号：US15054355

申请日：2016-02-26

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ming-Cheng Chang ,  Ran Yan ,  Bo Bai

IPC: H01L27/088 ,  H01L21/8234 ,  H01L21/3213 ,  H01L21/306

CPC classification number: H01L27/0886 ,  H01L21/30604 ,  H01L21/32133 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475

Abstract: A semiconductor device including a semiconductor layer, a plurality of semiconductor fins formed on a surface of the semiconductor layer and a plurality of gate electrodes formed over the surface of the semiconductor layer is provided. The semiconductor fins extend in parallel to each other along a first direction parallel to the surface of the semiconductor layer and have a first height in a second direction that is perpendicular to the first direction, and the gate electrodes comprise longitudinal portions extending parallel to the semiconductor fins along the first direction and, in particular, having a second height in the second direction lower than the first height.