-
公开(公告)号：US20220252785A1
公开(公告)日：2022-08-11
申请号：US17173639
申请日：2021-02-11
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Yusheng Bian , Roderick A. Augur , Kenneth J. Giewont , Karen Nummy
Abstract: Structures for an edge coupler and methods of forming a structure for an edge coupler. The structure includes a waveguide core over a dielectric layer, and a back-end-of-line stack over the waveguide core and the dielectric layer. The back-end-of-line stack includes an interlayer dielectric layer, a side edge, a first feature, a second feature, and a third feature laterally arranged between the first feature and the second feature. The first feature, the second feature, and the third feature are positioned on the interlayer dielectric layer adjacent to the side edge, and the third feature has an overlapping relationship with a tapered section of the waveguide core.
-
公开(公告)号：US11215756B2
公开(公告)日：2022-01-04
申请号：US16859347
申请日：2020-04-27
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Yusheng Bian , Roderick A. Augur , Michal Rakowski , Kenneth J. Giewont , Karen Nummy , Kevin K. Dezfulian , Bo Peng
Abstract: Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The edge coupler includes a waveguide core, and a shaped layer is positioned over a portion of the waveguide core. The waveguide core is comprised of a first material, and the shaped layer is comprised of a second material different in composition from the first material. The first material may be, for example, single-crystal silicon, and the second material may be, for example, silicon nitride.
-
公开(公告)号：US20210333474A1
公开(公告)日：2021-10-28
申请号：US16859347
申请日：2020-04-27
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Yusheng Bian , Roderick A. Augur , Michal Rakowski , Kenneth J. Giewont , Karen Nummy , Kevin K. Dezfulian , Bo Peng
Abstract: Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The edge coupler includes a waveguide core, and a shaped layer is positioned over a portion of the waveguide core. The waveguide core is comprised of a first material, and the shaped layer is comprised of a second material different in composition from the first material. The first material may be, for example, single-crystal silicon, and the second material may be, for example, silicon nitride.
-
公开(公告)号：US20250147235A1
公开(公告)日：2025-05-08
申请号：US18501602
申请日：2023-11-03
Applicant: GlobalFoundries U.S. Inc.
Inventor： Yusheng Bian , Andreas D. Stricker , Abdelsalam Aboketaf , Judson R. Holt , Kevin K. Dezfulian , Kenneth J. Giewont , Alexander Derrickson , Won Suk Lee , Sujith Chandran , Ryan W. Sporer , Teng-Yin Lin
Abstract: Structures for a photonics chip that include a photodetector and methods of forming such structures. The structure comprises a photodetector that is disposed on a substrate and that includes a light-absorbing layer. The light-absorbing layer includes a sidewall and a notch in the sidewall. The structure further comprises a waveguide core including a section adjacent to the notch in the sidewall of the light-absorbing layer.
-
公开(公告)号：US12211886B1
公开(公告)日：2025-01-28
申请号：US18765489
申请日：2024-07-08
Applicant: GlobalFoundries U.S. Inc.
Inventor： Prateek Kumar Sharma , Venkata Narayana Rao Vanukuru , Kevin K. Dezfulian , Kenneth J. Giewont
IPC: H01L21/768 , H01L21/764 , H01L49/02
Abstract: Structures including an inductor and methods of forming such structures. The structure comprises a semiconductor substrate including a first plurality of sealed cavities and a back-end-of-line stack on the semiconductor substrate. Each sealed cavity includes an air gap, and the back-end-of-line stack includes an inductor having a winding that overlaps with the scaled cavities.
-
Patent Agency Ranking
16.发明授权公开(公告)号：US11837851B2
公开(公告)日：2023-12-05
申请号：US17931933
申请日：2022-09-14
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Yusheng Bian , Roderick A. Augur , Michal Rakowski , Kenneth J. Giewont , Karen A. Nummy
CPC classification number: H01S5/2018 , H01S5/20 , H01S5/2231 , H01S5/2232 , H01S5/3013 , H01S5/021 , H01S5/026 , H01S5/3054 , H01S5/32333
Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.
-
公开(公告)号：US11662523B2
公开(公告)日：2023-05-30
申请号：US17151955
申请日：2021-01-19
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Yusheng Bian , Roderick A. Augur , Kenneth J. Giewont , Karen Nummy
CPC classification number: G02B6/305 , G02B6/0046 , G02B6/4298 , G02B6/12002 , G02B6/12004 , G02B2006/12147
Abstract: Structures including an edge coupler and methods of forming a structure including an edge coupler. The structure includes a waveguide core over a dielectric layer and a back-end-of-line stack over the dielectric layer and the waveguide core. The back-end-of-line stack includes a side edge and a truncated layer that is overlapped with a tapered section of the waveguide core. The truncated layer has a first end surface adjacent to the side edge and a second end surface above the tapered section of the waveguide core. The truncated layer is tapered from the first end surface to the second end surface.
-
18.发明申请公开(公告)号：US20230011972A1
公开(公告)日：2023-01-12
申请号：US17931933
申请日：2022-09-14
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Yusheng Bian , Roderick A. Augur , Michal Rakowski , Kenneth J. Giewont , Karen A. Nummy
Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.
-
公开(公告)号：US11536903B1
公开(公告)日：2022-12-27
申请号：US17406773
申请日：2021-08-19
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Theodore Letavic , Yusheng Bian , Kenneth J. Giewont , Karen Nummy
Abstract: Structures for an edge coupler and methods of fabricating a structure for an edge coupler. A first waveguide core has a first section that has a tapered shape and a second section that is adjoined to the first section. Multiple segments are positioned with a spaced arrangement adjacent to an end surface of the second section of the first waveguide core. A slab layer is adjoined to the first section of the first waveguide core. A second waveguide core has a section that overlaps with the first section of the first waveguide core to define a layer stack. The section of the second waveguide core has a tapered shape, and the first and second waveguide cores are comprised of different materials. The first section of the first waveguide core has a first thickness, and the slab layer has a second thickness that is less than the first thickness.
-
20.发明授权公开(公告)号：US11515685B2
公开(公告)日：2022-11-29
申请号：US17167201
申请日：2021-02-04
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Yusheng Bian , Roderick A. Augur , Michal Rakowski , Kenneth J. Giewont , Karen A. Nummy
Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.
-
-
-
-
-
-
-
-
-
Search Results
31
records
(took 0.013 seconds)
