公开(公告)号：US20210305103A1

公开(公告)日：2021-09-30

申请号：US16828273

申请日：2020-03-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Sipeng Gu ,  Judson Holt ,  Haiting Wang ,  Bangun Indajang

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/10

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. First and second gate structures extend over the semiconductor body. A source/drain region is positioned laterally between the first gate structure and the second gate structure. The source/drain region includes a semiconductor layer having a first section, a second section, and a third section. A first portion of the semiconductor body is positioned between the first section of the semiconductor layer and the second section of the semiconductor layer. A second portion of the semiconductor body is positioned between the second section of the semiconductor layer and the third section of the semiconductor layer.

公开(公告)号：US20210288182A1

公开(公告)日：2021-09-16

申请号：US16819832

申请日：2020-03-16

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Sipeng Gu ,  Judson Holt ,  Haiting Wang

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/51 ,  H01L29/10 ,  H01L21/02

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. First and second gate structures extend over the semiconductor body, a second gate structure that extends over the semiconductor body. A source/drain region is positioned laterally between the first gate structure and the second gate structure. The source/drain region includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer has a first section and a second section. The second semiconductor layer is positioned laterally between the first section of the first semiconductor layer and the second section of the first semiconductor layer.

公开(公告)号：US11916136B2

公开(公告)日：2024-02-27

申请号：US17739092

申请日：2022-05-07

Applicant: GlobalFoundries U.S. Inc.

Inventor： Arkadiusz Malinowski ,  Alexander Derrickson ,  Judson Holt

IPC: H01L29/73 ,  H01L29/735 ,  H01L21/265 ,  H01L21/324 ,  H01L29/165 ,  H01L29/66

CPC classification number: H01L29/735 ,  H01L21/26586 ,  H01L21/324 ,  H01L29/165 ,  H01L29/6625

Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a first terminal having a first raised semiconductor layer on a semiconductor substrate, a second terminal having a second raised semiconductor layer on the semiconductor substrate, and an intrinsic base on the semiconductor substrate. The intrinsic base is positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal. The intrinsic base includes a portion containing silicon-germanium with a germanium concentration that is graded in the lateral direction.

公开(公告)号：US11803009B2

公开(公告)日：2023-10-31

申请号：US17680421

申请日：2022-02-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh Mani Pandey ,  Yusheng Bian ,  Steven M. Shank ,  Judson Holt

IPC: G02B6/122 ,  G02B6/136 ,  H01L21/84

CPC classification number: G02B6/122 ,  G02B6/136 ,  H01L21/84

Abstract: Photonics structures including an optical component and methods of fabricating a photonics structure including an optical component. The photonics structure includes an optical component, a substrate having a cavity and a dielectric material in the cavity, and a dielectric layer positioned in a vertical direction between the optical component and the cavity. The optical component is positioned in a lateral direction to overlap with the cavity in the substrate.

公开(公告)号：US20230084007A1

公开(公告)日：2023-03-16

申请号：US17574785

申请日：2022-01-13

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh Mani Pandey ,  Jagar Singh ,  Judson Holt

IPC: H01L29/737 ,  H01L29/06 ,  H01L21/762 ,  H01L29/66

Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a dielectric layer having a cavity, a first semiconductor layer on the dielectric layer, a collector including a portion on the first semiconductor layer, an emitter including a portion on the first semiconductor layer, and a second semiconductor layer that includes a first section in the cavity and a second section. The second section of the second semiconductor layer is laterally positioned between the portion of the collector and the portion of the emitter.

公开(公告)号：US20210389521A1

公开(公告)日：2021-12-16

申请号：US16901509

申请日：2020-06-15

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Judson Holt ,  Yusheng Bian ,  Andreas D. Stricker ,  Colleen Meagher ,  Michal Rakowski

IPC: G02B6/12 ,  G02B6/13 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/18

Abstract: Structures for a photodetector and methods of fabricating a structure for a photodetector. A photodetector may have a light-absorbing layer comprised of germanium. A waveguide core may be coupled to the light-absorbing layer. The waveguide core may be comprised of a dielectric material, such as silicon nitride. Another waveguide core, which may be comprised of a different material such as single-crystal silicon, may be coupled to the light-absorbing layer.

公开(公告)号：US11133417B1

公开(公告)日：2021-09-28

申请号：US16819832

申请日：2020-03-16

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Sipeng Gu ,  Judson Holt ,  Halting Wang

IPC: H01L29/00 ,  H01L29/78 ,  H01L29/08 ,  H01L21/02 ,  H01L29/10 ,  H01L29/51

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. First and second gate structures extend over the semiconductor body, a second gate structure that extends over the semiconductor body. A source/drain region is positioned laterally between the first gate structure and the second gate structure. The source/drain region includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer has a first section and a second section. The second semiconductor layer is positioned laterally between the first section of the first semiconductor layer and the second section of the first semiconductor layer.

公开(公告)号：US20210091213A1

公开(公告)日：2021-03-25

申请号：US16748055

申请日：2020-01-21

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vibhor Jain ,  John J. Pekarik ,  Qizhi Liu ,  Judson Holt

IPC: H01L29/737 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

Abstract: Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A collector layer includes an inclined side surface, and a dielectric layer is positioned in a lateral direction adjacent to the inclined side surface of the collector layer. An intrinsic base is disposed over the collector layer, and an emitter is disposed over the intrinsic base. An airgap is positioned between the dielectric layer and the inclined side surface of the collector layer in the lateral direction, and an extrinsic base is positioned in the lateral direction adjacent to the intrinsic base. The extrinsic base is positioned over the airgap.

公开(公告)号：US20240159701A1

公开(公告)日：2024-05-16

申请号：US17987543

申请日：2022-11-15

Applicant: GlobalFoundries U.S. Inc.

Inventor： Judson Holt ,  Bartlomiej Jan Pawlak ,  Vibhor Jain

IPC: G01N27/414

CPC classification number: G01N27/4148

Abstract: Structures for an ion-sensitive field-effect transistor and methods of forming same. The structure comprises a semiconductor substrate, a microfluidic channel above the semiconductor substrate, a semiconductor layer including a portion positioned as a sensing layer in the microfluidic channel, a first electrical connection coupled to the portion of the semiconductor layer, and a second electrical connection coupled to the semiconductor substrate. The portion of the semiconductor layer is spaced above the semiconductor substrate.

公开(公告)号：US20240085624A1

公开(公告)日：2024-03-14

申请号：US17944252

申请日：2022-09-14

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian ,  Steven M. Shank ,  Judson Holt ,  Michal Rakowski ,  Bartlomiej Jan Pawlak

IPC: G02B6/122 ,  G02B6/13

CPC classification number: G02B6/1228 ,  G02B6/13

Abstract: Structures including an electro-absorption modulator and methods of forming such structures. The structure comprises a waveguide core including a first tapered section, a second tapered section, and a longitudinal axis. The first tapered section and the second tapered section are aligned along the longitudinal axis. The structure further comprises a first waveguide taper overlapping the first tapered section of the waveguide core, a second waveguide taper overlapping the second tapered section of the waveguide core, and a multiple-layer structure on the waveguide core between the first waveguide taper and the second waveguide taper.